Abstract: A rare-earth magnet according to an embodiment of the present invention comprises: a rare-earth magnet precursor including a composition of (R1(1-x)R2x)yFe(100-y-z-v-w)CozBvTMlw in which R1 comprises at least one of Nd or Pr, and R2 comprises Ce; and a diffusion metal including a composition of (LRE(100-p-q)HREp)TM2q, and diffused on the surface of the rare-earth magnet precursor, wherein the LRE in the diffusion metal can comprise light rare earth including Y, and the HRE can comprise heavy rare earth.

Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant ? of the first layer and a lattice constant ? of the second layer satisfy a relationship of ??0.04×??2×???+0.04×?.

Abstract: The present invention is an alloy that contains Fe, B, P, and Cu, and includes a non-crystalline phase and a plurality of crystalline phases formed in the non-crystalline, wherein an average Fe concentration in a whole alloy is 79 atomic % or greater, and wherein a density of Cu clusters when a region with a Cu concentration of 6.0 atomic % or greater among regions with 1.0 nm on a side in atom probe tomography is determined to be a Cu cluster is 0.20×1024/m3.

Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant ? of the first layer and a lattice constant ? of the second layer satisfy a relationship of ??0.04×??2×???+0.04 ×?.

Abstract: The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.

Abstract: According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1?xAlx (0<x?1) alloy, and exhibits tunnel magnetoresistance of 250% or more and 34000% or less at a room temperature.

Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [??m2] or more and 3 [??m2] or less.

Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1-31 xAlx (0<x?1) alloy, and exhibits tunnel magnetoresistance of 250% or more and 34000% or less at a room temperature.

Abstract: According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the <001> direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.

Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0?x<1) and an amount of oxygen in the tunnel barrier layer is lower than an amount of oxygen in a fully oxidized state in which the oxide has an ordered spinel structure.

Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0?x<1) and an amount of oxygen in the tunnel barrier layer is lower than an amount of oxygen in a fully oxidized state in which the oxide has an ordered spinel structure.

Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [??m2] or more and 3 [??m2] or less.

Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the <001> direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the <001> direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0<x?0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.

Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the <001> direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.