Abstract: A thin-film electroluminescent device includes dielectric layers having improved dielectric characteristics. The device is fabricated by forming a first transparent electrode layer of ITO, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer of ITO in this order on an insulating substrate. Each of the two dielectric layers is a film constituted by TaSnON. That is, the film includes tantalum, tin, oxygen, and nitrogen.

Abstract: Disclosed is an electroluminescent (EL) device having a CaGa.sub.2 S.sub.4 :Ce luminescent layer. The ratio of the X-ray diffraction peak intensity I.sub.2 for the (200) reflection of CaS to the X-ray diffraction peak intensity I.sub.1 for the (400) reflection of CaGa.sub.2 S.sub.4 as appearing in the X-ray diffraction spectrum for the luminescent layer, I.sub.2 /I.sub.1, is 0.1 or less. The amount of the impurity CaS in the luminescent layer is reduced. The EL device produces blue emission with high purity.

Abstract: A transparent thin-film EL display apparatus has a transparent thin-film EL element formed on a glass substrate. A rear substrate consisting of photochromic glass and the glass substrate on which the EL element is formed are disposed facing each other with the EL element located in between. A light-transmitting insulation material is inserted in a space between the two substrates and hermetically sealed. When the display on the EL element becomes hard to see due to light entering from the rear of the display apparatus, the photochromic glass reacts in response to the light and darkens the rear of the EL element, thereby blocking the light.

Abstract: A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-thorough stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device.

Abstract: In an electroluminescent device wherein a first electrode, a first insulating layer, a luminescent layer, a second insulating layer, and a second electrode are laminated in that order on a transparent electrode, the luminescent layer is made of ZnS as a host material and Tb, O, F, and Cl as additives Cl/Tb and Cl/F atomic ratios in the luminescent layer are each between 0.002 and 0.2 inclusively, and Cl concentration in the luminescent layer is between 0.002 at % and 0.2 at % inclusively. By adding a predetermined amount of Cl as mentioned above, the luminescent efficiency and luminescent brightness of the electroluminescent device can be improved.

Abstract: A thin-film electroluminescence element is formed by laminating, in order, on a glass substrate which is an insulating substrate, a first transparent electrode including optically transparent ZnO, a first insulating layer including optically transparent strontium titanate, a luminescent layer including CaGa.sub.2.9 S.sub.4.2 to which Ce is added as a luminescent center, a second insulating layer including optically transparent strontium titanate and a second transparent electrode including optically transparent ZnO. The optical spectrum of the luminescent layer deviates towards a short wavelength side due to the crystal structure changing and the ligand field surrounding the Ce changing slightly due to the existence of excess Ga in the luminescent layer. Also, because calcium thiogallate is used, high light intensity can be maintained.

Abstract: An electroluminescent device has a luminescent layer including an alkaline earth thiogallate doped with a luminescent center for producing blue light. An insulating layer disposed next to the luminescent layer includes a buffer area contacting the luminescent layer. The buffer area is made from a material which has an amorphous state at a temperature sufficient for crystallization of the alkaline earth thiogallate. Thus, when the device is manufactured, the luminescent layer can be formed in an amorphous state on the insulating layer and heat treated. Since the buffer layer remains in an amorphous state, the formation of alkaline earth sulfides which might degrade the color purity of emitted light at the interface of the crystalline luminescent layer and the amorphous buffer layer can be prevented.

Abstract: An electroluminescent device improved in brightness includes sequentially stacked layers having an optically transparent material on at least the viewing side of the structure and has a luminescent layer based on a Group II-III-VI compound host material with an element acting as a luminescent center added therein, wherein a Group II element having an ion radius differing from that of the Group II element constituting the compound host material is further added in the luminescent layer.

Abstract: A thin film electroluminescent display is capable of effectively preventing dielectric breakdown between both electrodes. A first transparent electrode layer, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer are laminated in that order on a first glass substrate to form a first light-emitting element. A second light-emitting element is fabricated in substantially the same way. A voltage is applied between the first and second electrode layers to cause the luminescent layers between both electrode layers to emit. As a result, desired characters are displayed. Those corners of the first and second electrodes disposed opposite to each other which are located within the planes of the electrode layers have round portions. The radius of circle of these round portions is in excess of a given value. This prevents concentration of the electric field on the corners of the electrodes.

Abstract: A magnetic detection device including at least one oscillator circuit having a magnetoresistance element which converts a change of magnetism detected into a digital signal and a comparator for comparing the digitalized oscillating frequency of the oscillator circuit with another digitalized oscillating frequency generated from another oscillating circuit by taking a ratio thereof or by detecting a phase difference between the pulse signals. Utilizing the magnetic detection device, the amount of change of magnetism can be stably detected with a high accuracy within a wide range of ambient usage temperatures. The physical quantity detection device includes a magnetic detection device which can detect any physical quantity with a high accuracy.

Abstract: A process for fabricating a blue-emitting SrS:Ce based electroluminescent device, which improves in brightness and blue color purity of the electroluminescent device, is disclosed. The blue-emitting luminescent layer of the device is formed as follows: a luminescent layer based on strontium sulfide (SrS) with cerium (Ce) doped at a concentration in a range of 0.01% by atomic or higher but less than 0.3% by atomic is deposited; and then heat treatment is applied thereto at a temperature in a range of 400.degree. C. or higher but 550.degree. C. or lower before forming any other layer thereon.

Abstract: An electroluminescent display in which a dielectric breakdown of a luminescent element is suppressed has luminescent elements disposed between first and second substrates, where the first and second substrates are deformed into a convex shape to improve breakdown characteristics.

Abstract: An MISFET type semiconductor sensor, which can avoid deterioration of characteristics, and a method for fabricating same are disclosed. Silicon oxide films and a silicon nitride film are formed on an upper surface of a p-type silicon substrate, and a movable portion is disposed above the silicon nitride film with a predetermined interval interposed therebetween. A movable gate electrode portion exists on a portion of the movable portion and is displaced by acceleration. Fixed electrodes (a source/drain portion) composed of an impurity diffusion layer are formed on the p-type silicon substrate, and a flowing current changes due to a change in a relative position with the movable gate electrode portion due to acceleration. Projections for movable-range restriction use are provided on a lower surface of the movable portion other than the movable gate electrode portion, and form a gap which is narrower than a gap between the p-type silicon substrate and movable gate electrode portion.

Abstract: An electroluminescent device comprising the sequential lamination of a first electrode, first insulating layer, phosphor layer, second insulating layer and second electrode while using an optically transparent material at least on the side on which light leaves the device; wherein, in addition to the phosphor layer being composed of calcium thiogallate (CaGa.sub.2 S.sub.4) doped with a luminescent center element, the host of the phosphor layer is strongly oriented to the (400) surface.

Abstract: A varifocal lens whose variable focal length can be controlled by, for example, an electric signal, and suitable for use in bar code readers, etc. A varifocal lens comprises a first pressure chamber defined between a glass substrate and a transparent elastic film. The transparent elastic film is faced to the surface of the planar glass substrate having parallel surfaces with a spacer incorporated therebetween to provide the first pressure chamber. A pump is provided adjacent to the first pressure chamber via a communicating path for charging an operating liquid to the first pressure chamber from a second pressure chamber of the pump by electrically deforming the transparent elastic film to form a lens having a variable focal length. The transparent elastic film has a film thickness distribution as such to provide a spherical plane in the central portion thereof and a third order curved surface in the periphery thereof.

Abstract: A thin-film EL display device of red luminescent color having high luminous intensity and high reliability is disclosed. The thin-film EL display device has a first transparent electrode, a first transparent insulating layer, a light-emitting layer of zinc sulfide (ZnS) with the addition of manganese (Mn), a red-light transmitting filter of amorphous silicon (a-Si), a second transparent insulating layer, and a second transparent electrode (second electrode), which are successively deposited one on top of another on a glass substrate. The EL display device produces red light from orange light emission from the light-emitting layer. High temperature resistance of the filter permits the insertion of the filter to a desired position during the fabrication process for the thin-film EL display device.

Abstract: A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-thorough stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device.

Abstract: This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof.An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4.

Abstract: A process for producing an electroluminescent device comprising a luminescent layer located between two electrodes formed on an insulating substrate wherein the luminescent layer is composed of a host material to which a luminescent center element is added and the host material is composed of an alkaline earth metal element of the Group II of the Periodic Table and an element of the Group VI, which process comprises forming the host material by chemical vapor deposition to react a gas of an organic compound containing the alkaline earth metal element of the Group II and a gas of a compound containing the element of the Group VI in a reactor, the gas of the organic compound containing the alkaline earth metal element of the Group II being formed from a cyclopentadienyl compound. By this process, EL devices can be produced with high reproducibility.

Abstract: A zinc oxide-based transparent conductive film containing of gallium or indium and having a resistivity of not more than 10.sup.-3 .OMEGA..cm is provided by evaporating a source of zinc oxide containing 0.5 to 5% by weight of gallium oxide or 0.3 to 4.5% by weight of indium oxide and depositing same onto a substrate after activating the vapor of the source by a plasma.