Abstract: A process cartridge includes a frame having a side surface at a side of the process cartridge. A photosensitive drum is supported by the frame, the photosensitive drum being rotatable about an axis thereof, the photosensitive drum including a first end positioned at the side of the process cartridge and a second end opposite to the first end in a direction of the axis of the photosensitive drum. A projection is positioned coaxial with the photosensitive drum and at the side of the process cartridge, with the projection projecting from the side surface of the frame in the axial direction of the photosensitive drum with at least a tip of the projection being exposed to outside of the process cartridge.

Abstract: A printing medium includes: a transparent backing sheet; a plurality of label portions adhered to the backing sheet in a line in a length direction of the backing sheet; a plurality of adhering portions provided in a plurality of inter-label regions between the plurality of label portions and having a lower transparency than the backing sheet; and a plurality of second transparent regions provided in the plurality of inter-label regions in such a way as to be adjacent to the adhering portions in the length direction of the backing sheet, and formed by the backing sheet.

Abstract: The present invention provides a cleaning composition having excellent storage stability, a cleaning method of a semiconductor substrate, and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains a polycarboxylic acid, a chelating agent, a sulfonic acid having an alkyl group having 9 to 18 carbon atoms, and water, in which a mass ratio of the polycarboxylic acid to the chelating agent is 10 to 200, a mass ratio of the polycarboxylic acid to the sulfonic acid is 70 to 1,000, a pH is 0.10 to 4.00, and an electrical conductivity is 0.08 to 11.00 mS/cm.

Abstract: An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00.

Abstract: A half cutter includes a cutting blade having a blade and a holder to which the blade is fixed, a blade receiving member having a blade receiving surface from and with which the blade is separated and comes into contact, and a spacer having at least one of a holder spacer arranged at the holder which is made of a material that is different from a material of the holder, is provided in the holder to protrude toward the blade receiving surface further than the blade, and generates a gap between the blade and the blade receiving surface and a blade receiving spacer arranged at the blade receiving surface which is made of a material different from a material of the blade receiving member, is provided to protrude from the blade receiving surface, and generates a gap between the blade and the blade receiving surface.

Abstract: A half cutter includes a cutting blade having a blade and a holder to which the blade is fixed, a blade receiving member having a blade receiving surface from and with which the blade is separated and comes into contact, and a spacer having at least one of a holder spacer arranged at the holder which is made of a material that is different from a material of the holder, is provided in the holder to protrude toward the blade receiving surface further than the blade, and generates a gap between the blade and the blade receiving surface and a blade receiving spacer arranged at the blade receiving surface which is made of a material different from a material of the blade receiving member, is provided to protrude from the blade receiving surface, and generates a gap between the blade and the blade receiving surface.

Abstract: Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

Abstract: Provided are a method for treating a pattern structure which is capable of inhibiting collapse of a pattern structure, a method for manufacturing an electronic device including such a treatment method, and a treatment liquid for inhibiting collapse of a pattern structure. The method for treating a pattern structure includes applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to a pattern structure formed of an inorganic material.

Abstract: Provided are a method for treating a pattern structure which is capable of inhibiting collapse of a pattern structure, a method for manufacturing an electronic device including such a treatment method, and a treatment liquid for inhibiting collapse of a pattern structure. The method for treating a pattern structure includes applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to a pattern structure formed of an inorganic material.

Abstract: Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

Abstract: An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract: An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.

Abstract: A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.

Abstract: A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.

Abstract: An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.

Abstract: An etching liquid that processes a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal and thereby removes selectively the first layer, wherein the etching liquid contains a fluorine-containing compound, an oxidizing agent and an organic silicon compound.

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract: An etching liquid for processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing at least one metal selected from transition metals belonging to group 3 to group 11 of the periodic table thereby removing the first layer selectively, wherein the etching liquid contains a hexafluorosilicic acid compound, and an oxidizing agent of which concentration is 0.05% by mass or more and less than 10% by mass.

Abstract: An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.