Patents by Inventor Tadashi Ohashi

Tadashi Ohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010010329
    Abstract: Disclosed is a document review apparatus which efficiently carries out document review by using a network. A document review apparatus comprises a memory unit which stores a reviewed form comprising a written document, contents thereof to be reviewed by a plurality of reviewers. The document review apparatus receives a response, comprising information holding a review result of the reviewed form from another apparatus, and stores it in the memory unit; when a predetermined number of responses have been stored, the document review apparatus creates statistical data relating to the contents of the responses, and displays the created statistical data in order to assist a user (the creator of the reviewed form) in revising the reviewed form.
    Type: Application
    Filed: February 14, 2001
    Publication date: August 2, 2001
    Inventor: Tadashi Ohashi
  • Patent number: 6250914
    Abstract: The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the wafer, and a second heater of annular shape is disposed to surround the first heater. Radiation thermometers are arranged at a ceiling portion of a reaction chamber. The first radiation thermometer measures a temperature of a central area of the wafer, the second radiation thermometer measures a temperature of a peripheral area of the wafer, and the third radiation thermometer measures a temperature of the susceptor. The first heater and the second heater are controlled by independent closed loops. When a wafer is set on the susceptor, a power of the second heater is controlled by using a value measured by the second radiation thermometer as a feedback signal.
    Type: Grant
    Filed: April 21, 2000
    Date of Patent: June 26, 2001
    Assignees: Toshiba Machine Co., Ltd, Toshiba Ceramics Co., Ltd.
    Inventors: Hirofumi Katsumata, Hideki Ito, Hidenori Takahashi, Tadashi Ohashi, Shuji Tobashi, Katsuyuki Iwata
  • Patent number: 6245313
    Abstract: The object of the present invention is to provide a process for manufacturing a product of glassy carbon, having endurance strength to fatigue at elevated temperature, and to thermal fatigue. After curing the material resin in a mold, the cured resin is baked to obtain a glassy carbon piece. The piece is then machined into a predetermined shape. Subsequently, the surface of the piece resulted after machining, is impregnated with the resin. Further, the resin-impregnated piece is baked so as to transform the impregnated resin into glassy carbon.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: June 12, 2001
    Assignees: Toshiba Machine Co., Ltd., Toshiba Ceramics Co., Ltd.
    Inventors: Kunihiko Suzuki, Takaaki Honda, Shinichi Mitani, Tadashi Ohashi, Shuji Tobashi
  • Patent number: 6209030
    Abstract: A system of copying a digital document easily maintains the security of the contents of the screen display of, for example, a Web page of the Internet displayed on, for example, a display unit. Tag information indicating the prevention of copying of a screen is included in the hypertext in which a document from a server is described. On the client side, browsing software for actually performing a screen-display using the document interprets the tag information in the hypertext, and prevents making of a copy of the screen when a user issues a request to make a copy of the screen.
    Type: Grant
    Filed: October 8, 1998
    Date of Patent: March 27, 2001
    Assignee: Fujitsu Limited
    Inventor: Tadashi Ohashi
  • Patent number: 6132519
    Abstract: A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.
    Type: Grant
    Filed: December 16, 1997
    Date of Patent: October 17, 2000
    Assignees: Toshiba Ceramics Co., Ltd., Toshiba Kikai Kabushikikaisha
    Inventors: Tadashi Ohashi, Katuhiro Chaki, Ping Xin, Tatsuo Fujii, Katsuyuki Iwata, Shinichi Mitani, Takaaki Honda
  • Patent number: 6113705
    Abstract: There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.
    Type: Grant
    Filed: August 20, 1998
    Date of Patent: September 5, 2000
    Assignees: Toshiba Ceramics Co., Ltd., Toshiba Kikai Kabushikikaisha
    Inventors: Tadashi Ohashi, Katuhiro Chaki, Ping Xin, Tatsuo Fujii, Katsuyuki Iwata, Shinichi Mitani, Takaaki Honda, Yuusuke Sato
  • Patent number: 6059885
    Abstract: A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion.
    Type: Grant
    Filed: December 16, 1997
    Date of Patent: May 9, 2000
    Assignees: Toshiba Ceramics Co., Ltd., Toshiba Kikai Kabushikikaisha
    Inventors: Tadashi Ohashi, Katuhiro Chaki, Ping Xin, Tatsuo Fujii, Katsuyuki Iwata, Shinichi Mitani, Takaaki Honda
  • Patent number: 5949890
    Abstract: Noise data from a noise source is provided for a neural network. An output signal from the neural network is provided for a node of a hidden layer H of the neural network. The weight of the neural network is updated by an update unit according to an error signal e.sub.j0 detected by a microphone, thereby outputting a deadening sound from a speaker.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: September 7, 1999
    Assignee: Fujitsu Limited
    Inventor: Tadashi Ohashi
  • Patent number: 5904769
    Abstract: This invention provides an epitaxial growth method capable of decreasing variations of the resistance of an epitaxial layer resulting from an in-plane temperature distribution of a silicon wafer and also capable of reducing particles and haze. This epitaxial growth method is an epitaxial growth method of growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of a silicon wafer with an in-plane temperature distribution of 2 to 50.degree. C., and includes the steps of arranging the silicon wafer in a reaction vessel, supplying into the reaction vessel a source gas containing (a) silane, (b) 5 to 600 vol % of hydrogen chloride added to the silane, and (c) a dopant consisting of a boron compound or a phosphorus compound, and growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of the wafer by setting a vacuum degree of 10 to 200 torr in the reaction vessel and heating the wafer to 900 to 1100.degree. C.
    Type: Grant
    Filed: January 3, 1997
    Date of Patent: May 18, 1999
    Assignees: Toshiba Ceramics Co., Ltd., Toshiba Machine Co., Ltd.
    Inventors: Tadashi Ohashi, Shinichi Mitani, Takaaki Honda
  • Patent number: 5868850
    Abstract: A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.
    Type: Grant
    Filed: June 6, 1996
    Date of Patent: February 9, 1999
    Assignees: Toshiba Ceramics Co., Ltd., Toshiba Kikai Co., Ltd.
    Inventors: Masahiko Ichishima, Eiichi Toya, Tadashi Ohashi, Masaki Shimada, Shinichi Mitani, Takaaki Honda
  • Patent number: 5668747
    Abstract: A coefficient updating method stops updating filter coefficients for a plurality of adaptive filters when a convergence condition is achieved. Active noise control within a system simulates an original noise signal with a simulated noise signal which is equal and opposite to the original noise signal. To detect feedback in such a system, a reference signal or "white noise" is generated by a speaker, transmitted through the system and received by a microphone. Coefficients of multiple filters such as an anti-feedback filter, a C filter, and a noise control filter are then updated to minimize adverse parameters such as original noise and feedback. Coefficient updating of the adaptive filters is stopped when a minimum average value is reached.
    Type: Grant
    Filed: January 25, 1995
    Date of Patent: September 16, 1997
    Assignee: Fujitsu Limited
    Inventor: Tadashi Ohashi
  • Patent number: 5636286
    Abstract: An active noise reduction device for reducing the noise produced by cooling fans in a computer. The active noise reduction device comprises a duct mounted on the casing of the computer and having at least one air passage. One end of the passage communicates with the interior of the casing near the cooling fans and the other end is open to the atmosphere. A first microphone is arranged in the duct near the first end opening for detecting noise, and a second microphone is arranged in the duct near the second end opening. A speaker is arranged in the duct near the second opening, and a controller controls the speaker in response to outputs of the first and second microphones for reducing the noise produced in the casing. The speaker makes a sound having a reverse phase to that of the noise produced in the computer and the speaker sound is superimposed on the noise.
    Type: Grant
    Filed: August 15, 1994
    Date of Patent: June 3, 1997
    Assignee: Fujitsu Limited
    Inventors: Eiji Makabe, Tsutomu Hoshino, Atsushi Yamaguchi, Tadashi Ohashi
  • Patent number: 5602926
    Abstract: A method and apparatus of determining the transfer characteristic in an active-noise-control system, which involves generating white noise at an end of a one-dimensional sound field that is defined by a linear ventilating system in which sound travels essentially parallel to the extended direction of the system; equalizing the transfer characteristic of the one-dimensional sound field and generating cancelling sound, according to an inverse of the transfer characteristic, to cancel the white noise and prevent noise being output from the other end of the one-dimensional sound field; continuously preventing the noise output and measuring the characteristic data of the one-dimensional sound field at, at least, one measuring point in the one-dimensional sound field; and calculating the transfer function of the one-dimensional sound field in the noise-output-prevented state, according to the characteristic data of the sound field.
    Type: Grant
    Filed: September 3, 1993
    Date of Patent: February 11, 1997
    Assignee: Fujitsu Limited
    Inventors: Tadashi Ohashi, Kensaku Fujii, Juro Ohga
  • Patent number: 5583943
    Abstract: An active noise elimination apparatus for eliminating noise generated from a blower by generating from a sound generation unit a sound which offsets the noise, in a cooling system for cooling a heat source by air blown from the blower and exhausted to an exhaust port of the system through a duct, includes a first sound reception unit for receiving the noise generated from the blower; a first simulation unit for outputting a sound to the sound generation unit simulating the noise generated from the blower and transmitted to the exhaust port through the duct; a second simulation unit for receiving as input a noise simulating signal of the first simulation unit so as to simulate a detouring sound generated from the sound generation unit and transmitted to the first sound reception unit through the duct; and a subtraction unit for subtracting the detouring sound simulating signal of the second simulation unit from the noise signal received by the first sound reception unit and outputting the result to the first s
    Type: Grant
    Filed: March 11, 1996
    Date of Patent: December 10, 1996
    Assignee: Fujitsu Limited
    Inventors: Tadashi Ohashi, Tsutomu Hoshino, Atsushi Yamaguchi
  • Patent number: 5544201
    Abstract: A signal suppressing apparatus for suppressing undesired signal components, in which a first filter electrically simulating a propagation system A of a physical phenomena such as a sound, vibration, electricity, etc. is mounted; a signal having a correlation to the signal to be input to the propagation system A is input to this first filter; and the output of the first filter exerts an influence upon the signal passing the propagation system A to make the passed signal approximate the intended value, wherein the first filter is split into a plurality of filters, each of which is composed by a discrete DSP, outputs are individually calculated in the split individual filters, and the individual calculation results are tabulated, whereby a value the same as the value obtained where the calculation is made without splitting of the first filter is obtained. This enables high speed signal processing even if a high speed DSP is not used.
    Type: Grant
    Filed: July 8, 1994
    Date of Patent: August 6, 1996
    Assignee: Fujitsu Limited
    Inventors: Tsutomu Hoshino, Atsushi Yamaguchi, Tadashi Ohashi, Juro Ohga, Hiroyuki Furuya
  • Patent number: 5178727
    Abstract: A ceramic membrane device for a photomask is a ring-shaped base plate constituting a circumferential frame and having a flat front surface, an outer side surface and a rear surface, a front CVD coating supported on the front surface of the base plate and defining a flat surface on which a masking pattern is to be formed, and a rear CVD coating formed on the rear surface of the base plate. The front and rear CVD coatings are made of a silicon compound.
    Type: Grant
    Filed: February 10, 1992
    Date of Patent: January 12, 1993
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Eiichi Toya, Yukio Itoh, Tadashi Ohashi, Masayuki Sumiya
  • Patent number: 5074017
    Abstract: A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.
    Type: Grant
    Filed: December 26, 1989
    Date of Patent: December 24, 1991
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Eiichi Toya, Yukio Itoh, Tadashi Ohashi, Masayuki Sumiya, Yasumi Sasaki