Abstract: A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first semiconductor layer including a recessed region and a protruding region, an active layer and a second semiconductor layer disposed on the protruding region, a contact structure disposed on the second semiconductor layer, a lower insulating pattern covering the first semiconductor layer and the contact structure, and having first and second openings, a first conductive pattern disposed on the lower insulating pattern and extending into the first opening, a second conductive pattern disposed on the lower insulating pattern and extending into the second opening, and a floating conductive pattern disposed on the lower insulating pattern. The first and second conductive patterns and the floating conductive pattern have the same thickness on the same plane.

Abstract: A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region.

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer including a recessed region and a protruding region, an active layer and a second conductivity-type semiconductor layer on the protruding region, a reflective electrode layer disposed on the second conductivity-type semiconductor layer, an insulating layer including a first opening disposed on a contact region of the first conductivity-type semiconductor layer and a second opening disposed on a contact region of the reflective electrode layer, a first conductive pattern disposed on the insulating layer, and extending into the first opening to be electrically connected to the contact region of the first conductivity-type semiconductor layer, a second conductive pattern disposed on the insulating layer, and extending into the second opening to be electrically connected to the reflective electrode layer, and a multilayer insulating structure covering the first and second conductive patterns.

Abstract: A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region.

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

Abstract: The present invention relates to an apparatus and a method for monitoring a tire pressure considering a low pressure situation. Provided is a tire pressure monitoring apparatus considering a low pressure situation including: a radius analyzing unit which calculates a radius analysis value using a relative velocity difference and an average velocity calculated from wheel velocities of the wheels mounted on the vehicle; a critical value setting unit which compares the calculated radius analysis value with a predetermined determination reference value and sets different critical values in accordance with the comparison result; and a low pressure determining unit which determines a low pressure of a tire mounted on a vehicle using the set critical value.

Abstract: Provided are a memory controller and an application processor (AP) for controlling utilization and performance of an input/output (I/O) device and a method of operating the memory controller. The memory controller includes an address translator configured to translate a first address received from a host processor into a second address indicating a memory address based on an address translation scheme selected from a plurality of address translation schemes based on memory resource utilization; and an evaluation module configured to evaluate the memory resource utilization of each of the plurality of address translation schemes based on a plurality of memory addresses generated based on each of the plurality of address translation schemes.

Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.

Abstract: A multi-level sensing circuit for a multi-level memory device configured to “recognize” more than two different voltages. The multi-level voltage sensing circuit may include a pre-charge controller configured to pre-charge a pair of bit lines with a bit-line pre-charge voltage level in response to an equalizing signal during a sensing mode. The multi-level voltage sensing circuit may include a read controller configured to maintain a voltage of the pair of bit lines at the bit-line pre-charge voltage level in response to a read control signal during a sensing operation. The multi-level voltage sensing circuit may include a sense-amplifier configured to generate data of the pair of bit lines during the sensing mode. The multi-level voltage sensing circuit may include a voltage sensor configured to generate the equalizing signal by comparing a bit-line voltage with a reference voltage.

Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.

Abstract: A system for assisting users in making progress towards the completion of a task by recommending actions is provided. The techniques disclosed herein enable a system to receive user input signals, such as a voice input, a text input or any other type of input comprising phrases indicating a task. The system can then automatically generate recommendations for directing the user to complete the task. The techniques disclosed herein can also identify a contextually-relevant application that is most suitable for completing the identified task. For instance, a user may have several messaging applications. Based on a context of the user's input, and other historical data utilized by one or more machine learning engines, a system can recommend an appropriate application, or provide a ranking of the applications, suitable for completing an identified task. The techniques disclosed herein also employ machine learning engines to improve accuracy of the recommendations over time.

Abstract: The present invention relates to an apparatus and a method for monitoring tire pressure according to a tire characteristic.

Abstract: An apparatus for pretreating a wheel speed includes a tone wheel having a plurality of teeth, a hall sensor configured to detect a measurement angle including an offset of each of the teeth, an offset correcting unit configured to correct the measurement angle with a corrective offset when disturbance is generated and a frequency estimating unit configured to estimate a frequency based on a result value calculated from the offset correcting unit.

Abstract: A display device includes a substrate having a display region and a non-display region disposed at one side of the display region, the display region includes first and second areas adjacent to each other; a display unit disposed on a front surface of the substrate, the display unit including a plurality of pixels for displaying an image; a cushion layer disposed on a rear surface of the substrate, the cushion layer including a first opening portion corresponding to the first area; a fingerprint sensor provided in the first opening portion of the cushion layer, the fingerprint sensor sensing a fingerprint of a user; and a first light-blocking layer disposed on a rear surface of the substrate, the first light-blocking layer covering at least part of the cushion layer and a lower surface of the fingerprint sensor.

Abstract: A light-emitting device includes a light-emitting chip having a first surface and a second surface. A first light reflection pattern is formed on the second surface. A plurality of terminals are disposed to be connected to the light-emitting chip by passing through the first light reflection pattern. A second light reflection pattern is formed on side surfaces of the light-emitting chip and the first light reflection pattern. A light-transmitting pattern is formed between the light-emitting chip and the second light reflection pattern and extends between the first light reflection pattern and the second light reflection pattern. A wavelength conversion layer is formed on the first surface of the light-emitting chip.

Abstract: A three-dimensional semiconductor memory device includes an electrode structure including gate electrodes and insulating layers, which are alternately stacked on a substrate, a semiconductor pattern extending in a first direction substantially perpendicular to a top surface of the substrate and penetrating the electrode structure, a tunnel insulating layer disposed between the semiconductor pattern and the electrode structure, a blocking insulating layer disposed between the tunnel insulating layer and the electrode structure, and a charge storing layer disposed between the blocking insulating layer and the tunnel insulating layer. The charge storing layer includes a plurality of first charge trap layers having a first energy band gap, and a second charge trap layer having a second energy band gap larger than the first energy band gap. The first charge trap layers are embedded in the second charge trap layer between the gate electrodes and the semiconductor pattern.

Abstract: According to an aspect of inventive concepts, there is provided a memory controller configured to control a memory device including a plurality of memory pages, the memory controller including an error correction code (ECC) region manager configured to manage the plurality of memory pages by dividing the plurality of memory pages into ECC enable regions and ECC disable regions, and an ECC engine configured to perform an ECC operation on data included in the ECC enable regions.

Abstract: A memory controller, an application processor, and a method of operating the memory controller can control performance and power consumption of an input/output device. The method includes allowing the memory device to enter a power down mode after an idle state is maintained for a first time period corresponding to a first setting value which is currently set, allowing the memory device to enter from the power down mode into an active state when access to the memory device occurs, determining a maintenance time of the power down mode to change the first setting value to a second setting value, based on a result obtained by monitoring a driving pattern of the memory device, and when the idle state is maintained for a second time period different from the first time period, allowing the memory device to enter the power down mode, based on the second setting value.