Abstract: A filtering circuit includes a clock selection unit configured to transfer a first clock or a second clock having a frequency lower than the first clock as an operating clock in response to a frequence signal, and a filter configured to filter an input signal and generate a filtered signal in synchronization with the operating clock.

Abstract: An output driver includes: a pull-up signal generation unit configured to control a pulse width of first data and output a pull-up pre-drive signal; a pull-down signal generation unit configured to control a pulse width of second data and output a pull-down pre-drive signal; a pull-up pre-driver unit configured to receive the pull-up pre-drive signal and generate a pull-up main drive signal; a pull-down pre-driver unit configured to receive the pull-down pre-drive signal and generate a pull-down main drive signal; a pull-up main driver unit configured to charge an output node according to the pull-up main drive signal; and a pull-down main driver unit configured to discharge the output node according to the pull-down main drive signal.

Abstract: A resistive memory apparatus includes a sensing voltage generation unit and a memory cell. The sensing voltage generation unit configured to drive a sensing node to a voltage with a predetermined level in response to a reference voltage and a voltage of the sensing node. The memory cell is connected with the sensing node and configured to change a magnitude of current flowing through the sensing node according to a resistance value thereof.

Abstract: A non-volatile memory device includes a memory cell including a resistance variable device and a switching unit for controlling a current flowing through the resistance variable device; a read reference voltage generator configured to generate a reference voltage according to a skew occurring in the switching unit; and a sense amplifier configured to sense a voltage corresponding to the current that flows through the resistance variable device based on the reference voltage.

Abstract: An internal voltage generator includes: a detection unit configured to detect a level of an internal voltage in comparison to a reference voltage; a first driving unit configured to discharge an internal voltage terminal, through which the internal voltage is outputted, in response to an output signal of the detection unit; a current detection unit configured to detect a discharge current flowing through the first driving unit; and a second driving unit configured to charge the internal voltage terminal in response to an output signal of the current detection unit.

Abstract: A buffer control circuit includes a current supply unit configured to supply current and adjust the current in response to codes, an amplifying buffer configured to operate using the current and output a value obtained by comparing a reference potential and the reference potential, a second buffer configured to buffer an output of the first buffer, and a code generation unit configured to generate the codes in response to an output of the second buffer.

Abstract: A semiconductor memory device can optimize the layout area and current consumption based on multi-phase clock signals which are generated by dividing a source clock signal using a reset signal without a delay locked loop and a phase locked loop in order to have various phase information of low frequencies and different activation timings with a constant phase difference.

Abstract: A semiconductor memory apparatus includes a resistive memory cell; a data sensing unit configured to sense an output voltage, formed by a sensing current supplied to the resistive memory cell, based on a reference voltage, and output data having a value corresponding to the sensing result; and a reference voltage generation unit comprising a dummy memory cell including first and second resistors having first and second resistance values, respectively, and configured to output a voltage formed by the sensing current supplied to the dummy memory cell as the reference voltage.

Abstract: A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.

Abstract: A semiconductor apparatus includes an odd data clock buffer group configured to maintain or shift a phase of a multi-phase source clock signal, and output a first multi-phase clock signal, an even data clock buffer group configured to maintain or shift a phase of the multi-phase source clock signal, and output a second multi-phase clock signal, an odd data output buffer group configured to drive odd data in response to the first multi-phase clock signal and output the driven data to an odd data pad group, and an even data output buffer group configured to drive even data in response to the second multi-phase clock signal and output the driven data to an even data pad group, wherein the phases of clock signals of the first and second multi-phase clock signal are different from each other.

Abstract: A rail-to-rail amplifier includes an NMOS type amplification unit configured to perform an amplification operation on differential input signals in a domain in which DC levels of the differential input signals are higher than a first threshold value, a PMOS type folded-cascode amplification unit configured to perform an amplification operation on the differential input signals in a domain in which the DC levels of the differential input signals are lower than a second threshold value which is higher than the first threshold value, the PMOS type folded-cascode amplification unit being cascade-coupled to the NMOS type amplification unit, and an adaptive biasing unit configured to interrupt a current path of the PMOS type folded-cascode amplification unit in a domain in which the DC levels of the differential input signals are higher than the second threshold value in response to the differential input signals.

Abstract: A data clock frequency divider circuit includes a training decoder and a frequency divider. The training decoder outputs a clock alignment training signal, which is indicative of the start of a clock alignment training, in response to a command and an address of a mode register set. The frequency divider, which is reset in response to an output of the training decoder, receives an internal data clock to divide a frequency of the internal data clock in half. The data clock frequency divider circuit secures a sufficient operating margin so that a data clock and a system clock are aligned within a pre-set clock training operation time by resetting the data clock to correspond to a timing in which the clock training operation starts, thereby providing a clock training for a high-speed system.

Abstract: A phase locked loop that generates an internal clock by controlling a delay time of a delay cell according to conditions of PVT, thereby improving a jitter characteristic of the internal clock. The delay cell includes a first current controller for controlling first and second currents in response to a control voltage, and a second current controller for controlling the first and second currents in response to frequency range selection signals. The phase locked loop includes a phase comparator for comparing a reference clock with a feedback clock, a control voltage generator for generating a control voltage corresponding to an output of the phase comparator, and a voltage controlled oscillator for generating an internal clock having a frequency in response to the control voltage and one or more frequency range control signals, wherein the feedback clock is generated using the internal clock.

Abstract: A rail-to-rail amplifier includes an NMOS type amplification unit configured to perform an amplification operation on differential input signals in a domain in which DC levels of the differential input signals are higher than a first threshold value, a PMOS type folded-cascode amplification unit configured to perform an amplification operation on the differential input signals in a domain in which the DC levels of the differential input signals are lower than a second threshold value which is higher than the first threshold value, the PMOS type folded-cascode amplification unit being cascade-coupled to the NMOS type amplification unit, and an adaptive biasing unit configured to interrupt a current path of the PMOS type folded-cascode amplification unit in a domain in which the DC levels of the differential input signals are higher than the second threshold value in response to the differential input signals.

Abstract: A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.

Abstract: An output driver includes: a pull-up signal generation unit configured to control a pulse width of first data and output a pull-up pre-drive signal; a pull-down signal generation unit configured to control a pulse width of second data and output a pull-down pre-drive signal; a pull-up pre-driver unit configured to receive the pull-up pre-drive signal and generate a pull-up main drive signal; a pull-down pre-driver unit configured to receive the pull-down pre-drive signal and generate a pull-down main drive signal; a pull-up main driver unit configured to charge an output node according to the pull-up main drive signal; and a pull-down main driver unit configured to discharge the output node according to the pull-down main drive signal.

Abstract: A phase locked loop that generates an internal clock by controlling a delay time of a delay cell according to conditions of PVT, thereby improving a jitter characteristic of the internal clock. The delay cell includes a first current controller for controlling first and second currents in response to a control voltage, and a second current controller for controlling the first and second currents in response to frequency range selection signals. The phase locked loop includes a phase comparator for comparing a reference clock with a feedback clock, a control voltage generator for generating a control voltage corresponding to an output of the phase comparator, and a voltage controlled oscillator for generating an internal clock having a frequency in response to the control voltage and one or more frequency range control signals, wherein the feedback clock is generated using the internal clock.

Abstract: A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.

Abstract: A ring oscillator including a plurality of buffer units, each of which has a cross-coupled structure, for generating clock signals using a bias voltage having a predetermined voltage level applied thereto, wherein the clock signals have a swing width corresponding to the bias voltage.

Abstract: A termination resistance circuit includes a control signal generator for generating a control signal whose logical value changes when a calibration code has a predetermined value, a plurality of parallel resistors which are respectively turned on/off in response to the calibration code, and a resistance value changing unit for changing the total resistance value of the termination resistance circuit in response to the control signal.