Abstract: A semiconductor device includes a plurality of synchronization blocks configured to sequentially synchronize a plurality of input signals swinging in a complementary metal oxide semiconductor (CMOS) region with multi-phase clock signals to output a plurality of output signals swinging in a current mode logic (CML) region, a plurality of first swing region converting blocks configured to convert the plurality of output signals to a plurality of converted output signals swinging in the CMOS region, a serialization block configured to serialize a plurality of converted output signals, thereby outputting a serialized signal swinging in the CML region, and a second swing region converting block configured to convert the serialized signal to a serialized output signal swinging in the CMOS region.

Abstract: A delay locked loop circuit for compensating for a phase skew of a memory device includes a first delay locking unit configured to delay an external clock of the memory device by a first amount of delay to output a first internal clock, a second locking unit configured to delay the external clock by a second amount of delay to output a second internal clock, the second amount of delay being greater than the first amount of delay, and a selecting unit configured to select one of the first internal clock and the second internal clock as an internal clock of the memory device.

Abstract: Phase locked loop and method for controlling the same includes a phase/frequency detector configured to detect a phase difference between an input clock and a feedback clock to generate an up signal or a down signal depending on the detected phase difference, a charge pump configured to variably control a bandwidth according to a bandwidth control signal input thereinto, the charge pump operating in response to the up signal or the down signal and a voltage controlled oscillator configured to change a frequency according to an output of the charge pump.

Abstract: A data output circuit includes a serial data output unit for outputting a plurality of parallel data as serial data according to an operation mode, an internal information output unit for outputting internal information data according to the operation mode, and a buffering unit for receiving the serial data and the internal information data through an identical input end and buffering the received data.

Abstract: A latch circuit includes a data input/output unit configured to form a current path through a first node in response to an input data to output an output data, a holding unit configured to form a current path through a second node in response to the output data to store the output data, and a clock input unit coupled to the first and second nodes in parallel in response to a clock.

Abstract: A termination resistance circuit includes a control signal generator for generating a control signal whose logical value changes when a calibration code has a predetermined value, a plurality of parallel resistors which are respectively turned on/off in response to the calibration code, and a resistance value changing unit for changing the total resistance value of the termination resistance circuit in response to the control signal.

Abstract: A ring oscillator including a plurality of buffer units, each of which has a cross-coupled structure, for generating clock signals using a bias voltage having a predetermined voltage level applied thereto, wherein the clock signals have a swing width corresponding to the bias voltage.

Abstract: A clock generating circuit, including a pulse generating unit to generate a plurality of pulse signals based on a reference clock, the pulse signals each having the same period, a phase difference between the adjacent pulse signals being a first phase difference; and a multi-phase clock generating unit to generate a plurality of multi-phase clocks, a phase difference between the adjacent multi-phase clocks being equal to a second phase difference between pulse signals of a pulse signal pair, based on a plurality of unit-phase clock generating units receiving the pulse signal pairs.

Abstract: There is provided an output driver, which includes a pre-driver configured to generate a main driving control signal in response to a data signal, a main driver configured to drive an output terminal in response to the main driving control signal, an auxiliary driving control signal generator configured to generate an auxiliary driving control signal having an activation interval corresponding to the data signal and an interval control signal, and an auxiliary driver configured to drive the output terminal in response to the auxiliary driving control signal.

Abstract: A semiconductor memory device including a clock input for receiving a source clock and supplying a generated clock to a plurality of clock transmission lines; a plurality of clock amplifiers, each amplifying a respective generated clock loaded on one of the plurality of clock transmission lines in response to a column enable signal; and a data input/output for inputting/outputting a plurality of data in response to the amplified clocks output by the plurality of clock amplifiers.

Abstract: A parallel-to-serial converter includes a data input unit configured to receive a plurality of parallel data by using a plurality of clock signals having different phases, and a parallel-to-serial conversion unit configured to sequentially select and output an output signal of the data input unit by using a plurality of clock signals having a predetermined phase difference from the plurality of clock signals used in the data input unit.

Abstract: A delay locked loop circuit for compensating for a phase skew of a memory device includes a first delay locking unit configured to delay an external clock of the memory device by a first amount of delay to output a first internal clock, a second locking unit configured to delay the external clock by a second amount of delay to output a second internal clock, the second amount of delay being greater than the first amount of delay, and a selecting unit configured to select one of the first internal clock and the second internal clock as an internal clock of the memory device.

Abstract: Semiconductor memory device with duty correction circuit includes a clock edge detector configured to generate first and second detection pulses in response to a transition timing of a common clock signal in an initial measurement operation; a duty detector configured to compare the first and second detection pulses to output comparison result signals; and a code counter configured to control the duty detector based on the comparison signals outputted from the duty detector in the initial measurement operation.

Abstract: A quadrature phase correction circuit includes an N-bit code counter configured to generate an N-bit code value according to a detected phase difference when a quadrature phase correction is carried out; a storage configured to store N-bit code values according to a plurality of detected phase differences; and a controller configured to share the N-bit code counter, control the generation of the N-bit code values according to the plurality of detected phase differences, and control the storing of the N-bit code values in an allocated space of the storage.

Abstract: A semiconductor memory device with a clock synchronization circuit capable of performing a desired phase/frequency locking operation, without the jitter peaking phenomenon and the pattern jitter of an oscillation control voltage signal using injection locking. The device includes a phase-locked loop that detects a phase/frequency difference between a feedback clock signal and a reference clock signal to generate an oscillation control voltage signal corresponding to the detected phase/frequency difference, and generates the feedback clock signal corresponding to the oscillation control voltage signal. An injection locking oscillation unit sets up a free running frequency in response to the oscillation control voltage signal and generates an internal clock signal which is synchronized with the reference clock signal.

Abstract: A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.

Abstract: An injection locking clock generator can vary the free running frequency of an injection locking oscillator to broaden an operating frequency range of an oscillation signal injected to itself, thereby performing an injection locking with respect to all frequencies of an operating frequency range. The clock generator includes a main oscillator configured to generate oscillation signals of a frequency corresponding to a control voltage, and an injection locking oscillator configured to generate division signals synchronized with the oscillation signals by dividing the oscillation signals, wherein a free running frequency of the injection locking oscillator is set according to the frequency of the oscillation signals.

Abstract: A low pass filter includes a driver unit configured to output a voltage proportional to an input pulse width, a charge/discharge unit configured to charge the output voltage of the driver unit, a comparator unit configured to compare an output voltage of the charge/discharge unit with a reference value to output a square wave signal, and a switching unit configured to switch the charge/discharge unit to an operation state, based on a bandwidth expansion signal.

Abstract: A charge pumping circuit includes a first charge pump configured to perform a charge pumping operation on an output terminal in response to a first pumping control signal, an auxiliary charge pumping controller configured to generate a second pumping control signal activated during a predetermined section of an activation period of the first pumping control signal and a second charge pump configured to perform a charge pumping operation on the output terminal in response to the second pumping control signal.

Abstract: Phase locked loop and method for controlling the same includes a phase/frequency detector configured to detect a phase difference between an input clock and a feedback clock to generate an up signal or a down signal depending on the detected phase difference, a charge pump configured to variably control a bandwidth according to a bandwidth control signal input thereinto, the charge pump operating in response to the up signal or the down signal and a voltage controlled oscillator configured to change a frequency according to an output of the charge pump.