Abstract: The embodiments disclosed herein provide an electrocardiogram data processing server, an electrocardiogram data processing method, and a computer program. The embodiments disclosed herein further provide an electrocardiogram data processing server, an electrocardiogram data processing method, and a computer program, the electrocardiogram data processing server configured to determine whether analysis is required while segmenting an electrocardiogram signal into signal segments with variable window sizes, for instance, by changing a window size of a signal segment according to whether analysis of a previous signal segment is required.

Abstract: A pseudo dual port memory device in which an operating speed is improved and stability is increased is provided. The pseudo dual port memory device may include a memory cell, a pair of bit lines connected to the memory cell, a write driver, a sense amp, and a column multiplexer which is connected to the bit lines, receives a write multiplexer control signal and a read multiplexer control signal, connects the bit lines to the write driver in response to the write multiplexer control signal, and connects the bit lines to the sense amp in response to the read multiplexer control signal. A precharge control signal generation circuit which is connected to the column multiplexer may generate a precharge control signal on the basis of the read and write multiplexer control signals, and a bit line precharge circuit may precharge the bit lines based on the precharge control signal.

Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.

Abstract: The present invention relates to a deep-learning based system and method of automatically determining a degree of damage to each area of a vehicle, which is capable of quickly calculating a consistent and reliable quote for vehicle repair by analyzing an image of a vehicle in an accident by using a deep learning-based Mark R-CNN framework and then extracting a component image corresponding to a damaged part, and automatically determining the degree of damage in the extracted component image based on a pre-trained model.

Abstract: The disclosure relates to an electrocardiogram (ECG) data processing method and a non-transitory recording medium storing an instruction set for executing an ECG data processing method, and more particularly, to a method of extracting an analysis-required section from an ECG signal by considering a data value or a morphological pattern of the ECG signal.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch includes switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. The charge injection control elements include resistors or transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.

Abstract: A medical data providing device includes a memory, a communication unit, and a processor. The processor is configured to read a biosignal stored in the memory, divide the biosignal at certain time intervals, convert a signal segment into the frequency, and determines whether the signal segment is an analysis necessary section or an analysis unnecessary section based on a frequency component of the signal segment. The processor is further configured to analyze the signal segment of the analysis necessary section to generate data including an analysis result, and transmits data including the analysis result to a certain device.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.

Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.

Abstract: The present disclosure relates to a power swivel device for a vehicle seat where a brake unit is installed between a fixed plate mounted to a seat rail and a rotating plate mounted to a seat. The brake unit delivers rotational force of the motor to the rotating plate when the motor is operated and constrains a flow in a rotational direction of the rotating plate when the motor is stopped. Accordingly, it is possible to prevent a flow of a seat in a rotational direction due to gear backlash.

Abstract: The first battery module and the second battery module are connected by a bus-bar. A cell voltage sensing circuit shared by at least some battery cells of the first battery module and at least some battery cells of the second battery module measures a voltage of each battery cell.

Abstract: In a battery apparatus, a battery pack includes a plurality of battery modules and a bus-bar connecting two battery modules among the plurality of battery modules. A wire connects the battery pack and the switch for controlling current supply of the battery pack. A voltage measuring circuit measures a voltage of the bus-bar, a voltage of the battery pack, and voltages of the plurality of battery modules. A processor diagnoses a connection status of the bus-bar and a connection status of the wire based on a current of the battery pack, the voltage of the bus-bar, the voltage of the battery pack, and the voltages of the plurality of battery modules.

Abstract: The present invention relates to a device and a method for diagnosing a switch using voltage distribution, and more particularly, to a device and a method for diagnosing a switch using voltage distribution, which connect one or more resistors connected in series with the switch in parallel and calculate voltage applied to one resistor among one or more resistors by using the voltage distribution to diagnose a state of the switch based on the calculated voltage, in order to diagnose the state of the switch positioned on a cathode power supply line connecting a battery and a load.

Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.

Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.

Abstract: A system and a method of diagnosing abnormality of a main control unit, in which an auxiliary control unit for diagnosing an abnormal operation of a main control unit is additionally included in a battery management system including one or more battery management modules and the main control unit controlling the battery management module, thereby more stably driving the battery management system.

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.