Patents by Inventor Tai-Chun Wang

Tai-Chun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120248405
    Abstract: A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.
    Type: Application
    Filed: March 28, 2012
    Publication date: October 4, 2012
    Applicant: HUGA OPTOTECH INC.
    Inventors: Der-Wei Tu, Wei-Chih Wen, Tai-Chun Wang, Po-Hung Lai, Chih-Ping Hsu
  • Publication number: 20100258836
    Abstract: A light-emitting device includes a substrate; a stacked structure including a first type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first type semiconductor layer, and a second type semiconductor layer positioned on the light-emitting structure, wherein the stacked structure includes a depression exposing the first type semiconductor layer; a first electrode positioned on the first type semiconductor layer in the depression, the first electrode including at least one first pad and at least one first extending wire with one end connected to the first pad; a second electrode positioned on the second type semiconductor layer, the second electrode including at least one second pad and at least one second extending wire with one end connected to the second pad; wherein the distance between the first pad and the second pad is greater than 70% of the width of the light-emitting device.
    Type: Application
    Filed: January 5, 2010
    Publication date: October 14, 2010
    Applicant: HUGA OPTOTECH INC.
    Inventors: TAI CHUN WANG, WEI CHIH WEN
  • Publication number: 20100258824
    Abstract: An electrode structure includes at least two first electrodes and at least two second electrodes configured to be electrically connected in parallel to a power supply. Each of the first electrodes includes at least one first pad and at least one first extending wire with one end connected to the first pad, and the at least two first electrodes are spaced apart from each other. Each of the second electrodes includes at least one second pad and at least one second extending wire with one end connected to the second pad, and the at least two second electrodes are spaced apart from each other.
    Type: Application
    Filed: January 5, 2010
    Publication date: October 14, 2010
    Applicant: HUGA OPTOTECH INC.
    Inventors: TAI CHUN WANG, WEI CHIH WEN
  • Patent number: 7579202
    Abstract: The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: August 25, 2009
    Assignee: Tekcore Co., Ltd.
    Inventors: Wen-Chieh Hsu, Yu-Chuan Liu, Jenn-Hwa Fu, Shih-Hung Lee, Tai-Chun Wang
  • Publication number: 20090162959
    Abstract: The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.
    Type: Application
    Filed: December 21, 2007
    Publication date: June 25, 2009
    Inventors: Wen-Chieh HSU, Yu-Chuan Liu, Jenn-Hwa Fu, Shih-Hung Lee, Tai-Chun Wang