Patents by Inventor Taichiroo Konno

Taichiroo Konno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10418241
    Abstract: A nitride semiconductor template includes a substrate, and a chlorine-containing nitride semiconductor layer. The chlorine-containing nitride semiconductor layer contains an iron concentration of not higher than 1×1017 cm?3.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: September 17, 2019
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Taichiroo Konno, Hajime Fujikura, Michiko Matsuda
  • Patent number: 10060047
    Abstract: A nitride semiconductor crystal producing method, includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: August 28, 2018
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Hajime Fujikura, Taichiroo Konno, Yuichi Oshima
  • Patent number: 9397232
    Abstract: There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.
    Type: Grant
    Filed: April 3, 2015
    Date of Patent: July 19, 2016
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Hajime Fujikura, Taichiroo Konno, Michiko Matsuda
  • Patent number: 9359692
    Abstract: A metal chloride gas generator includes a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side, a raw material section heater and a growing section heater each of which heats an inside of the reactor, an upstream end comprising a gas inlet, and a gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section. The gas inlet pipe includes a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: June 7, 2016
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Taichiroo Konno, Hajime Fujikura
  • Patent number: 9236252
    Abstract: A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: January 12, 2016
    Assignee: SCIOCS COMPANY LIMITED
    Inventors: Taichiroo Konno, Hajime Fujikura, Michiko Matsuda
  • Publication number: 20150357416
    Abstract: A nitride semiconductor template includes a substrate, and a chlorine-containing nitride semiconductor layer. The chlorine-containing nitride semiconductor layer contains an iron concentration of not higher than 1×1017 cm?3.
    Type: Application
    Filed: August 20, 2015
    Publication date: December 10, 2015
    Inventors: Taichiroo KONNO, Hajime Fujikura, Michiko Matsuda
  • Patent number: 9105755
    Abstract: There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.
    Type: Grant
    Filed: June 15, 2012
    Date of Patent: August 11, 2015
    Assignee: HITACHI METALS, LTD.
    Inventors: Hajime Fujikura, Taichiroo Konno, Michiko Matsuda
  • Publication number: 20150214308
    Abstract: There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.
    Type: Application
    Filed: April 3, 2015
    Publication date: July 30, 2015
    Inventors: Hajime FUJIKURA, Taichiroo KONNO, Michiko MATSUDA
  • Patent number: 8829489
    Abstract: A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer formed on the substrate and including a Si-doped layer doped with Si as an uppermost layer thereof. The group III nitride semiconductor layer has a total thickness of not less than 4 ?m and not more than 10 ?m. The Si-doped layer includes a Si concentration gradient layer having a carrier concentration that gradually decreases toward an outermost surface thereof so as to be not less than 1×1017 cm?3 and not more than 5×1017 cm?3 at the outermost surface of the group III nitride semiconductor layer.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: September 9, 2014
    Assignee: Hitachi Metals, Ltd.
    Inventors: Taichiroo Konno, Hajime Fujikura
  • Patent number: 8796711
    Abstract: A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer, a reflective portion between the semiconductor substrate and the light emitting portion, and a current dispersion layer on the light emitting portion. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a thickness TA1 defined by a formula (1) and the second semiconductor layer has a thickness TB1 defined by a formula (2), where ?P represents a peak wavelength of the light emitted from the active layer, nA represents a refractive index of the first semiconductor layer, nB represents a refractive index of the second semiconductor layer, nIn represents a refractive index of a first cladding layer, and ? represents an incident angle of light from the first cladding layer to the second semiconductor layer.
    Type: Grant
    Filed: September 2, 2011
    Date of Patent: August 5, 2014
    Assignee: Hitachi Metals, Ltd.
    Inventor: Taichiroo Konno
  • Patent number: 8786052
    Abstract: A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: July 22, 2014
    Assignee: Hitachi Metals, Ltd.
    Inventors: Hajime Fujikura, Taichiroo Konno, Yuichi Oshima
  • Publication number: 20140196660
    Abstract: A nitride semiconductor crystal producing method, includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
    Type: Application
    Filed: January 24, 2014
    Publication date: July 17, 2014
    Applicant: Hitachi Metals, Ltd.
    Inventors: Hajime FUJIKURA, Taichiroo KONNO, Yuichi OSHIMA
  • Patent number: 8664663
    Abstract: A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 ?m and not greater than 10 ?m, and an average silicon carrier concentration in the silicon-doped layer is not lower than 1×1018 cm?3 and not higher than 5×1018 cm?3.
    Type: Grant
    Filed: August 10, 2012
    Date of Patent: March 4, 2014
    Assignee: Hitachi Cable, Ltd.
    Inventors: Taichiroo Konno, Hajime Fujikura
  • Publication number: 20130247817
    Abstract: A metal chloride gas generator includes a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side, a raw material section heater and a growing section heater each of which heats an inside of the reactor, an upstream end comprising a gas inlet, and a gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section. The gas inlet pipe includes a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section.
    Type: Application
    Filed: March 11, 2013
    Publication date: September 26, 2013
    Applicant: Hitachi Cable, Ltd.
    Inventors: Taichiroo KONNO, Hajime Fujikura
  • Publication number: 20130092950
    Abstract: A nitride semiconductor growth substrate includes a principal surface including a C-plane of a sapphire substrate, and a convex portion that is formed on the principal surface, has a cone or pyramid shape or a truncated cone or pyramid shape, is disposed to form a lattice pattern in a top view thereof, and includes a side surface inclined at an angle of less than 90 degrees relative to the principal surface. The convex portion has a height of 0.5 to 3 ?m from the principal surface. A distance between adjacent ones of the convex portion is 1 to 6 ?m. The side surface of the convex portion has a surface roughness (RMS) of not more than 10 nm.
    Type: Application
    Filed: September 13, 2012
    Publication date: April 18, 2013
    Applicant: Hitachi Cable, Ltd.
    Inventors: Hajime FUJIKURA, Michiko Matsuda, Taichiroo Konno
  • Publication number: 20130069075
    Abstract: A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
    Type: Application
    Filed: September 11, 2012
    Publication date: March 21, 2013
    Applicant: Hitachi Cable, Ltd.
    Inventors: Hajime Fujikura, Taichiroo Konno, Yuichi Oshima
  • Publication number: 20130048942
    Abstract: A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 ?m and not greater than 10 ?m, and an average silicon carrier concentration in the silicon-doped layer is not lower than 1×1018 cm?3 and not higher than 5×1018 cm?3.
    Type: Application
    Filed: August 10, 2012
    Publication date: February 28, 2013
    Applicant: Hitachi Cable, Ltd.
    Inventors: Taichiroo KONNO, Hajime Fujikura
  • Publication number: 20130043442
    Abstract: A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.
    Type: Application
    Filed: August 8, 2012
    Publication date: February 21, 2013
    Applicant: Hitachi Cable, Ltd.
    Inventors: Taichiroo KONNO, Hajime FUJIKURA, Michiko MATSUDA
  • Patent number: 8350277
    Abstract: A light emitting element includes a semiconductor substrate, a light emitting part having a first and second conductivity type cladding layers and an active layer sandwiched between the cladding layers. A reflecting part is disposed between the substrate and the light emitting part. A current dispersing layer disposed on a side of the light emitting part opposite to the reflecting. The reflecting part has at least three pair layers of first and second semiconductor layers, the first semiconductor layer has a first thickness, the second semiconductor layer has a second thickness and a plurality of pair layers of the reflecting part have a different thickness to each other as values of the incident angle of light are different with respect to each pair layer. At least one pair layer is defined by the incident angle of light being not less than 50 degrees.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: January 8, 2013
    Assignee: Hitachi Cable, Ltd.
    Inventor: Taichiroo Konno
  • Publication number: 20130001644
    Abstract: There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.
    Type: Application
    Filed: June 15, 2012
    Publication date: January 3, 2013
    Applicant: HITACHI CABLE, LTD.
    Inventors: Hajime FUJIKURA, Taichiroo KONNO, Michiko MATSUDA