Abstract: A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Abstract: The present invention provides an electron emitting device that includes a cathode, and a gate onto which electrons field-emitted from the cathode are irradiated. The gate includes at least a layer containing molybdenum and oxygen provided at a portion onto which the electrons field-emitted from the cathode are irradiated. The layer has peaks in a range of 397 eV through 401 eV, a range of 414 eV through 418 eV, a range of 534 eV through 538 eV, and a range of 540 eV through 547 eV, respectively, in a spectrum measured by electron energy loss spectroscopy using a transmission electron microscope.

Abstract: An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229±0.5 eV and a sub peak having a peak top in the range of 228.1±0.3 eV.

Abstract: A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 ?m tin in depth according to a predetermined line width.

Abstract: An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229±0.5 eV and a sub peak having a peak top in the range of 228.1±0.3 eV.

Abstract: A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 ?m in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.

Abstract: A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 ?m tin in depth according to a predetermined line width.

Abstract: A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

Abstract: To provide a method of manufacturing a nano structure having a pattern of 2 ?m or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 ?m or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed.

Abstract: The invention provides a cross section evaluating apparatus capable of analyzing the cross sectional structure in a state where the temperature of the specimen is regulated. There is disclosed an information acquisition apparatus comprising a stage for placing the specimen, temperature regulation means for regulating the temperature of the specimen, exposure means for exposing a surface, of which information is desired, of the specimen, and information acquisition means for acquiring information relating to the surface exposed by the exposure means.

Abstract: A sample processing apparatus includes a stage for supporting a sample, a first temperature controller for controlling a temperature of the sample, an ion beam generator for irradiating the sample with an ion beam, and a detector for detecting a signal emitted from the sample in response to the irradiation of the ion beam. Also provided is a probe for obtaining a part of the sample processed by the irradiation of the ion beam and conveying it to a sample table, a second temperature controller for controlling a temperature of the probe, and a third temperature controller for controlling a temperature of the sample table.

Abstract: A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction.

Abstract: A solid sample fabricating method includes preparing a specimen containing a first substance, which is in a liquid phase at normal temperature and normal pressure, and a second substance different from the first substance, which is in a solid or a liquid phase at the normal temperature and the normal pressure, the second substance being dispersed in the first substance, and attaching the specimen as a droplet to a surface of a cooled stage, whereby an entire region to be observed is converted into an amorphous state.

Abstract: A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material.

Abstract: A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

Abstract: A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Abstract: To reuse glass used in a flat panel display, processing suitable for global environment such as processing of separating a lead component must be realized. A disassembly processing method for a flat panel display having a structure in which a face plate and rear plate mainly containing glass are airtightly joined via a frame with frit glass is characterized by including the step of separating the face plate and rear plate joined with the frit glass. The separation step is characterized by separating the face plate and rear plate by cutting, dissolution, or melting.

Abstract: A sample processing apparatus includes a stage for supporting a sample, a first temperature controller for controlling a temperature of the sample, an ion beam generator for irradiating the sample with an ion beam, and a detector for detecting a signal emitted from the sample in response to the irradiation of the ion beam. Also provided is a probe for obtaining a part of the sample processed by the irradiation of the ion beam and conveying it to a sample table, a second temperature controller for controlling a temperature of the probe, and a third temperature controller for controlling a temperature of the sample table.

Abstract: A sample processing apparatus includes a probe, a probe mover for moving the probe such that the probe is brought into contact with a part of a sample, an adhering device for adhering the probe to the part of the sample, and an ion beam generator for irradiating the sample with an ion beam to separate the part of the sample from a remaining body of the sample. A temperature controller controls temperatures of the probe and the sample individually to prevent a temperature change of the part of the sample when the probe is bought into contact with the part of the sample and when the sample is irradiated with an ion beam by the ion beam generator.

Abstract: An apparatus for evaluating a cross section of a specimen in a specimen chamber, wherein the apparatus includes a specimen stage for placing the specimen, a temperature regulation unit for regulating the temperature of the specimen, an ion beam generation unit for irradiating the specimen with an ion beam thereby performing cross section processing and observation of the specimen, a detection unit for detecting emission signals emitted from the specimen in response to the irradiation of the ion beam for observing the specimen, and a marking unit for marking the specimen.