Patents by Inventor Taishi Furukawa

Taishi Furukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11753429
    Abstract: To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group; wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: September 12, 2023
    Assignees: TOSOH CORPORATION, SAGAMI CHEMICAL RESEARCH INSTITUTE
    Inventors: Hiroyuki Oike, Teppei Hayakawa, Yuki Yamamoto, Taishi Furukawa, Ken-ichi Tada
  • Publication number: 20220017553
    Abstract: To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): L1-Co-L2??(1) wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group; wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.
    Type: Application
    Filed: November 8, 2019
    Publication date: January 20, 2022
    Inventors: Hiroyuki OIKE, Teppei HAYAKAWA, Yuki YAMAMOTO, Taishi FURUKAWA, Ken-ichi TADA
  • Patent number: 10988494
    Abstract: To provide europium complexes having high photostability.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: April 27, 2021
    Assignees: TOSOH CORPORATION, SAGAMI CHEMICAL RESEARCH INSTITUTE
    Inventors: Keisuke Araki, Hiroya Honda, Naoyuki Koiso, Ryo Nakagame, Fumiaki Yoshitomi, Kohei Iwanaga, Taishi Furukawa
  • Publication number: 20200354389
    Abstract: To provide europium complexes having high photostability.
    Type: Application
    Filed: November 27, 2018
    Publication date: November 12, 2020
    Inventors: Keisuke ARAKI, Hiroya HONDA, Naoyuki KOISO, Ryo NAKAGAME, Fumiaki YOSHITOMI, Kohei IWANAGA, Taishi FURUKAWA
  • Patent number: 10336782
    Abstract: Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R1 represents a silyloxy group represented by general formula (2) (wherein R6, R7 and R8 independently represent an alkyl group having 1 to 6 carbon atoms); R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R3, R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: July 2, 2019
    Assignee: SAGAMI CHEMICAL RESEARCH INSTITUTE
    Inventors: Naoyuki Koiso, Yuki Yamamoto, Hiroyuki Oike, Teppei Hayakawa, Taishi Furukawa, Ken-ichi Tada
  • Publication number: 20180362568
    Abstract: Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R1 represents a silyloxy group represented by general formula (2) (wherein R6, R7 and R8 independently represent an alkyl group having 1 to 6 carbon atoms); R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R3, R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.
    Type: Application
    Filed: December 12, 2016
    Publication date: December 20, 2018
    Inventors: Naoyuki KOISO, Yuki YAMAMOTO, Hiroyuki OIKE, Teppei HAYAKAWA, Taishi FURUKAWA, Ken-ichi TADA
  • Patent number: 8748644
    Abstract: This invention aims at providing (2,4-dimethylpentadienyl)-(ethylcyclopentadienyl)ruthenium which may contain its related structure compound, from which a ruthenium-containing thin film can be produced; a method of producing the same; a method of producing the ruthenium-containing thin film using the same; the ruthenium-containing thin film; and the like. The invention relates to producing the thin film using, as a precursor, (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound in an amount not more than 5% by weight, which can be obtained by separating the related structure compound from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: June 10, 2014
    Assignee: Tosoh Corporation
    Inventors: Taishi Furukawa, Noriaki Oshima, Kazuhisa Kawano, Hirokazu Chiba
  • Patent number: 8742153
    Abstract: For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: June 3, 2014
    Assignee: Tosoh Corporation
    Inventors: Atsushi Maniwa, Noriaki Oshima, Kazuhisa Kawano, Taishi Furukawa, Hirokazu Chiba, Toshiki Yamamoto
  • Publication number: 20120227625
    Abstract: For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.
    Type: Application
    Filed: November 29, 2010
    Publication date: September 13, 2012
    Inventors: Atsushi Maniwa, Noriaki Oshima, Kazuhisa Kawano, Taishi Furukawa, Hirokazu Chiba, Toshiki Yamamoto
  • Publication number: 20110087039
    Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.
    Type: Application
    Filed: August 20, 2007
    Publication date: April 14, 2011
    Applicants: TOSOH CORPORATION, SAGAMI CHEMICAL RESEARCH CENTER
    Inventors: Ken-ichi TADA, Taishi FURUKAWA, Koichiro INABA, Tadahiro YOTSUYA, Hirokazu CHIBA, Toshiki YAMAMOTO, Tetsu YAMAKAWA, Noriaki OSHIMA
  • Patent number: 7906668
    Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.
    Type: Grant
    Filed: August 20, 2007
    Date of Patent: March 15, 2011
    Assignees: Tosoh Corporation, Sagami Chemical Research Center
    Inventors: Ken-ichi Tada, Taishi Furukawa, Koichiro Inaba, Tadahiro Yotsuya, Hirokazu Chiba, Toshiki Yamamoto, Tetsu Yamakawa, Noriaki Oshima
  • Patent number: 7816549
    Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases).
    Type: Grant
    Filed: July 28, 2006
    Date of Patent: October 19, 2010
    Assignees: Tosoh Corporation, Sagami Chemical Research Center
    Inventors: Ken-ichi Tada, Koichiro Inaba, Taishi Furukawa, Tetsu Yamakawa, Noriaki Oshima
  • Publication number: 20100105936
    Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.
    Type: Application
    Filed: July 28, 2006
    Publication date: April 29, 2010
    Applicants: TOSOH CORPORATION, SAGAMI CHEMICAL RESEARCH CENTER
    Inventors: Ken-ichi Tada, Koichiro Inaba, Taishi Furukawa, Tetsu Yamakawa, Noriaki Oshima
  • Publication number: 20100010248
    Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.
    Type: Application
    Filed: August 20, 2007
    Publication date: January 14, 2010
    Applicants: Tosoh Corporation, Sagami Chemical Research Center
    Inventors: Ken-ichi Tada, Taishi Furukawa, Koichiro Inaba, Tadahiro Yotsuya, Hirokazu Chiba, Toshiki Yamamoto, Tetsu Yamakawa, Noriaki Oshima
  • Patent number: 7632958
    Abstract: Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).
    Type: Grant
    Filed: November 1, 2006
    Date of Patent: December 15, 2009
    Assignees: Tosoh Corporation, Sagami Chemical Research Center
    Inventors: Ken-ichi Tada, Koichiro Inaba, Taishi Furukawa, Hirokazu Chiba, Tetsu Yamakawa, Noriaki Oshima
  • Patent number: 7592471
    Abstract: A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.
    Type: Grant
    Filed: January 25, 2006
    Date of Patent: September 22, 2009
    Assignees: Tosoh Corporation, Sagami Chemical Research Center
    Inventors: Kenichi Sekimoto, Ken-ichi Tada, Mayumi Takamori, Tetsu Yamakawa, Taishi Furukawa, Noriaki Oshima
  • Publication number: 20090043119
    Abstract: Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element. The present invention relates to a tantalum compound represented by the following formula (1) (In the formula, R1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), or a tantalum compound represented by the general formula (2) (In the formula, R2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.
    Type: Application
    Filed: January 25, 2006
    Publication date: February 12, 2009
    Applicants: TOSOH CORPORATION, SAGAMI CHEMICAL RESEARCH CENTER
    Inventors: Kenichi Sekimoto, Ken-ichi Tada, Mayumi Takamori, Tetsu Yamakawa, Taishi Furukawa, Noriaki Oshima
  • Publication number: 20090036697
    Abstract: Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).
    Type: Application
    Filed: November 1, 2006
    Publication date: February 5, 2009
    Applicants: TOSOH CORPORATION, SAGAMI CHEMICAL RESEARCH CENTER
    Inventors: Ken-ichi Tada, Koichiro Inaba, Taishi Furukawa, Hirokazu Chiba, Tetsu Yamakawa, Noriaki Oshima
  • Patent number: 6916944
    Abstract: A novel bismuth compound having excellent vaporization characteristic and/or thermal stability, a process of producing the same and a process of producing a film in the film formation by the CVD process are disclosed. Bismuth compounds each represented by the following formula 1, 5 and 9, processes of producing the same, and processes of producing a film. In the formulae, R1 and R7 each represents a lower alkyl group; R2, R8, R12, and R13 each represents a lower alkyl group, a lower alkoxy group, or the like; m represents the number of the substituent R12 in the range of 0-5; n1, n2, and n3 respectively represent the number of the substituent R2, the number of the substituent R8, and the number of the substituent R13 each in the range of 0-4; and R3 to R6, R9 to R11, R14, and R15 each represents hydrogen, a lower alkyl group, or the like, provided that specific combinations of the substituents are excluded.
    Type: Grant
    Filed: April 7, 2004
    Date of Patent: July 12, 2005
    Assignee: Tosoh Corporation
    Inventors: Taishi Furukawa, Noriaki Oshima, Kenichi Sekimoto
  • Publication number: 20040204483
    Abstract: A novel bismuth compound having excellent vaporization characteristic and/or thermal stability, a process of producing the same and a process of producing a film in the film formation by the CVD process are disclosed. Bismuth compounds each represented by the following formula 1, 5 and 9, processes of producing the same, and processes of producing a film.
    Type: Application
    Filed: April 7, 2004
    Publication date: October 14, 2004
    Applicant: TOSOH CORPORATION
    Inventors: Taishi Furukawa, Noriaki Oshima, Kenichi Sekimoto