Abstract: A light-emitting electrochemical cell 10 includes an emitting layer 12 and electrodes 13 and 14, one on each side of the emitting layer 12. The emitting layer 12 contains a light-emitting material and an ionic compound. The ionic compound has general formula (1), wherein M is N or P; R1, R2, R3, and R4 each independently represent a C1-C20 saturated aliphatic group; and X is preferably an anion having a phosphoric ester bond or a sulfuric ester bond. The light-emitting material is preferably an organic light-emitting polymer, a metal complex, an organic low molecular compound, or a quantum dot.

Abstract: A light-emitting electrochemical cell 10 includes an emitting layer 12 and electrodes 13 and 14, one on each side of the emitting layer 12. The emitting layer 12 contains a light-emitting material and an ionic compound. The ionic compound has general formula (1), wherein M is N or P; R1, R2, R3, and R4 each independently represent a C1-C20 saturated aliphatic group; and X is preferably an anion having a phosphoric ester bond or a sulfuric ester bond. The light-emitting material is preferably an organic light-emitting polymer, a metal complex, an organic low molecular compound, or a quantum dot.

Abstract: A method of producing a thin film transistor includes a gate electrode formation step that forms a gate electrode on a substrate, a gate insulating layer formation step that forms a gate insulating layer on the substrate in such a manner as to cover the gate electrode formed in the gate electrode formation step, a source/drain electrodes formation step that forms a source electrode and a drain electrode on the gate insulating layer, and a semiconductor layer formation step that applies an aqueous solution for semiconductor layer formation which is an aqueous solution comprising at least a single wall carbon nanotube and a surfactant between the source electrode and the drain electrode formed in the source/drain electrodes formation step by a coating process to form a semiconductor layer comprising the single wall carbon nanotube.

Abstract: A method of producing a thin film transistor includes a gate electrode formation step that forms a gate electrode on a substrate, a gate insulating layer formation step that forms a gate insulating layer on the substrate in such a manner as to cover the gate electrode formed in the gate electrode formation step, a source/drain electrodes formation step that forms a source electrode and a drain electrode on the gate insulating layer, and a semiconductor layer formation step that applies an aqueous solution for semiconductor layer formation which is an aqueous solution comprising at least a single wall carbon nanotube and a surfactant between the source electrode and the drain electrode formed in the source/drain electrodes formation step by a coating process to form a semiconductor layer comprising the single wall carbon nanotube.

Abstract: An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain electrode formed directly on the gate insulating film, an organic semiconductor layer formed directly on the source electrode and the drain electrode, and a voltage control layer disposed directly between the gate insulating film and the organic semiconductor layer and directly contacting the source electrode and the drain electrode, wherein the voltage control layer gives an ambipolar characteristic to the organic semiconductor layer.

Abstract: An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.

Abstract: An organic semiconductor device includes a gate insulating film, an organic semiconductor layer, and a voltage control layer disposed in at least part of an area between the gate insulating film and the organic semiconductor layer and giving an ambipolar characteristic to the organic semiconductor layer.

Abstract: An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.

Abstract: A substance-occluding material, an electrochemical device employing same and a method of producing same are provided. The substance-occluding material wherein a substance, for example, a fullerene molecule, different from a substance to be occluded, such as hydrogen gas, is contained in the inside of a tubular material, such as carbon nanotube.