Patents by Inventor Takafumi Taniguchi

Takafumi Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180370100
    Abstract: A method for manufacturing a decorative molding in which a transfer layer is transferred onto an injection molded product from a transfer sheet simultaneously with performing of injection molding in which at least one knockout pin in a second half-mold is caused to retreat to clamp a first half-mold and the second half-mold together; and the at least one knockout pin is made to advance so that the first half-mold and the second half-mold are released from each other until the second half-mold and the first half-mold open to a predetermined interval, while the transfer layer in a non-transfer area that is to remain on the transfer sheet is pushed against the first half-mold.
    Type: Application
    Filed: September 4, 2018
    Publication date: December 27, 2018
    Inventors: Takafumi TANIGUCHI, Tatsuya NAKANISHI, Takafumi MATSUI
  • Patent number: 10083948
    Abstract: In order to form, in a wide band gap semiconductor device, a high field resistant sealing material having a large end portion film thickness, said high field resistant sealing material corresponding to a reduced termination region having a high field intensity, and to improve accuracy and shorten time of manufacturing steps, this semiconductor device is configured as follows. At least a part of a cross-section of a high field resistant sealing material formed close to a termination region at the periphery of a semiconductor chip has a perpendicular shape at a chip outer peripheral end portion, said shape having, on the chip inner end side, a film thickness that is reduced toward the inner side. In a semiconductor device manufacturing method for providing such semiconductor device, the high field resistant sealing material is formed in a semiconductor wafer state, then, heat treatment is performed, and after dicing is performed, a chip is mounted.
    Type: Grant
    Filed: December 26, 2014
    Date of Patent: September 25, 2018
    Assignee: Hitachi, Ltd.
    Inventors: Kan Yasui, Kazuhiro Suzuki, Takafumi Taniguchi
  • Publication number: 20170352648
    Abstract: In order to form, in a wide band gap semiconductor device, a high field resistant sealing material having a large end portion film thickness, said high field resistant sealing material corresponding to a reduced termination region having a high field intensity, and to improve accuracy and shorten time of manufacturing steps, this semiconductor device is configured as follows. At least a part of a cross-section of a high field resistant sealing material formed close to a termination region at the periphery of a semiconductor chip has a perpendicular shape at a chip outer peripheral end portion, said shape having, on the chip inner end side, a film thickness that is reduced toward the inner side. In a semiconductor device manufacturing method for providing such semiconductor device, the high field resistant sealing material is formed in a semiconductor wafer state, then, heat treatment is performed, and after dicing is performed, a chip is mounted.
    Type: Application
    Filed: December 26, 2014
    Publication date: December 7, 2017
    Inventors: Kan YASUI, Kazuhiro SUZUKI, Takafumi TANIGUCHI
  • Patent number: 8837884
    Abstract: The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: September 16, 2014
    Assignee: Oclaro Japan, Inc.
    Inventors: Takanori Suzuki, Takafumi Taniguchi
  • Publication number: 20120321244
    Abstract: The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.
    Type: Application
    Filed: June 7, 2012
    Publication date: December 20, 2012
    Applicant: OPNEXT JAPAN, INC
    Inventors: Takanori SUZUKI, Takafumi TANIGUCHI
  • Publication number: 20100111126
    Abstract: In a horizontal-cavity vertical-emitting semiconductor laser including an Al-containing semiconductor layer, deterioration of light output property due to oxidization of the Al-containing semiconductor layer is suppressed. A lower cladding layer, an active layer, and an upper cladding layer are stacked in this order from the lower layer on a main surface of a substrate made of GaAs. The upper cladding layer is made of AlGaAs or AlGaInP containing Al in high concentration. An emitting plane layer combining a function of preventing the oxidization of Al contained in the upper cladding layer is formed on an upper portion of the upper cladding layer, and an electric contact layer is formed on an upper portion of the emitting plane layer. The emitting plane layer is made of InGaP, and the electric contact layer is made of GaAs.
    Type: Application
    Filed: October 29, 2009
    Publication date: May 6, 2010
    Inventors: Junichiro Shimizu, Etsuko Nomoto, Shinichi Nakatsuka, Tsukuru Ohtoshi, Takafumi Taniguchi
  • Patent number: 7463663
    Abstract: A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.
    Type: Grant
    Filed: February 7, 2007
    Date of Patent: December 9, 2008
    Assignee: Opnext Japan, Inc.
    Inventors: Toshihiko Fukamachi, Shigeki Makino, Takafumi Taniguchi, Masahiro Aoki
  • Publication number: 20070195847
    Abstract: A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.
    Type: Application
    Filed: February 7, 2007
    Publication date: August 23, 2007
    Inventors: Toshihiko Fukamachi, Shigeki Makino, Takafumi Taniguchi, Masahiro Aoki
  • Publication number: 20050287813
    Abstract: An apparatus for decreasing plasma-induced damage caused by exposure to plasma is provided in an apparatus for manufacturing semiconductor devices using plasma. An apparatus is used for irradiating the semiconductor surface with as least one of X-rays and UV-rays in a vacuum or in an inert atmosphere after plasma processing.
    Type: Application
    Filed: August 31, 2004
    Publication date: December 29, 2005
    Inventors: Takeshi Kikawa, Hiroyuki Uchiyama, Takafumi Taniguchi