Abstract: A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.

Abstract: The present invention provides a paste composition for an electrode, the paste composition comprising phosphorus-containing copper alloy particles, tin-containing particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell.

Abstract: A wiring member comprising a substrate, a copper wiring layer having an electrical resistivity of not larger than 4×10?6 ?cm in directly or indirectly contact with the substrate, an aluminum diffusion layer, contiguous to the copper wiring layer, having an aluminum concentration gradient descending towards the inside, and an aluminum oxide layer contiguous to and covering the aluminum diffusion layer, wherein a ratio of a thickness of the copper wiring layer to a thickness of the aluminum diffusion layer is 1.5 to 5. The disclosure is also concerned with a method of manufacturing the wiring member and an electronic device.

Abstract: In an electronic component having a wiring and/or an electrode prepared through firing of a paste or in an electronic component having a wiring in contact with a glass or glass ceramic member, provided is an electronic component using a Cu-based wiring material which less suffers from increase in electric resistance due to oxidation, which less causes bubbles in the glass or glass ceramic, and has satisfactory migration resistance. The Cu—Al alloy powder includes a Cu—Al alloy powder including Cu and, preferably, 50 percent by weight or less of Al; and an aluminum oxide film having a thickness of 80 nm or less and being present on the surface of the Cu—Al alloy powder. The powder, when compounded with a glass or glass ceramic material to give a paste, can be used to form wiring (interconnections), electrodes, and/or contact members.

Abstract: A plasma display panel (PDP) includes a first plate, and a second plate disposed to face the first plate via a discharge space and providing barrier ribs. A plurality of first electrodes and a plurality of second electrodes extending in a first direction, and a dielectric layer covering the first electrodes and the second electrodes are provided on the first plate. A plurality of address electrodes extending in a second direction, and a protective layer covering the dielectric layer and the address electrodes and exposing at least a part of the protective layer to the discharge space are provided on the dielectric layer. The address electrodes are made up by including a conductive layer formed by either one of aluminum and an alloy containing aluminum and copper and by not including a layer of a simple substance of copper.

Abstract: Provided is a method for manufacturing a two-dimensional pattern by simultaneously forming a plurality of quantum dots on a surface of a solid material and making the quantum dots a periodic structure by a laser irradiation, and a device structure and a device fabricated by the method. The method for fabricating a quantum dot-formed surface including the laser irradiation which irradiate at least one batch of laser onto a surface of a solid material to simultaneously form a plurality of quantum dots on the surface, arranging the plurality of quantum dots into periodic arrays.

Abstract: A semiconductor device having an improved whisker resistance in an exterior plating film is disclosed. The semiconductor device includes a tab with a semiconductor chip fixed thereto, plural inner leads, plural outer leads formed integrally with the inner leads, a plurality of wires for coupling electrode pads of the semiconductor chip and the inner leads with each other, and a sealing body for sealing the semiconductor chip. The outer leads project from the sealing body and an exterior plating film, which is a lead-free plating film, is formed on a surface of each of the outer leads.

Abstract: Provided is a conductive paste which contains an inexpensive metal, such as copper or aluminum, as an electrode wiring material and has oxidation resistance that enables the paste to withstand a high-temperature process performed in an oxidizing atmosphere and an electronic part equipped with electrode wiring formed from the paste. The electronic part in accordance with the present invention is equipped with electrode wiring that comprises a conductive glass phase containing transition metals and phosphorus, metal particles, and none of the substances prohibited by the RoHS directive. The electronic part is characterized in that each of the transition metals contained in the conductive glass phase is present in the state of having a plurality of oxidation numbers and that the proportion of the atoms which have the largest oxidation number for each transition metal satisfies a given relationship.

Abstract: The paste composition for an electrode are constituted with copper-containing particles having a peak temperature of an exothermic peak showing a maximum area in the simultaneous ThermoGravimetry/Differential Thermal Analysis of 280° C. or higher, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for a photovoltaic cell electrode.

Abstract: The paste composition for an electrode according to the present invention includes metal particles containing copper as a main component, a flux, glass particles, a solvent, and a resin. Further, a photovoltaic cell according to the present invention has an electrode formed by using the paste composition for an electrode.

Abstract: The paste composition for an electrode of the first aspect of the present invention includes silver alloy particles, glass particles, a resin, and a solvent. The paste composition for an electrode of the second aspect of the present invention includes copper particles, silver or silver alloy particles, glass particles containing P2O5 and V2O5, a resin, and a solvent, in which the content of the copper particles to the silver or silver alloy particles is from 9% by mass to 88% by mass. Further, the cell of a photovoltaic cell of the present invention has an electrode formed by using the paste composition for an electrode.

Abstract: The paste composition for an electrode are constituted with metal particles having copper as a main component, a phosphorous-containing compound, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for an electrode.

Abstract: The paste composition for an electrode includes metal particles having copper as a main component, glass particles including diphosphorus pentoxide and divanadium pentoxide and having a content of divanadium pentoxide of 1% by mass or more, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for an electrode.

Abstract: A jet pump is disclosed through which a liquid flows. The jet pump includes a jet nozzle including an injection port for injecting the liquid. The jet pump also includes a throat pipe including a throat passage that extends linearly. The throat pipe includes a downstream side with an open part, and the liquid injected from the injection port flows into the throat passage. The liquid in the throat passage forms a liquid seal across a cross section of the throat passage to generate negative pressure, which introduces the liquid into the throat passage.

Abstract: A plasma display panel (PDP) includes a first plate, and a second plate disposed to face the first plate via a discharge space and providing barrier ribs. A plurality of first electrodes and a plurality of second electrodes extending in a first direction, and a dielectric layer covering the first electrodes and the second electrodes are provided on the first plate. A plurality of address electrodes extending in a second direction, and a protective layer covering the dielectric layer and the address electrodes and exposing at least a part of the protective layer to the discharge space are provided on the dielectric layer. The address electrodes are made up by including a conductive layer formed by either one of aluminum and an alloy containing aluminum and copper and by not including a layer of a simple substance of copper.

Abstract: A wiring member comprising a substrate, a copper wiring layer having an electrical resistivity of not larger than 4×10?6 ?cm in directly or indirectly contact with the substrate, an aluminum diffusion layer, contiguous to the copper wiring layer, having an aluminum concentration gradient descending towards the inside, and an aluminum oxide layer contiguous to and covering the aluminum diffusion layer, wherein a ratio of a thickness of the copper wiring layer to a thickness of the aluminum diffusion layer is 1.5 to 5. The disclosure is also concerned with a method of manufacturing the wiring member and an electronic device.

Abstract: The objects of the present invention are to provide a copper-base electrode which can be calcined in an oxidative atmosphere, e.g., in air, like a silver electrode, and is less expensive than a silver electrode; an electrode paste; and electronic parts using it. The other objects of the present invention are to provide a copper-base electrode which can be calcined in an inert gas atmosphere, e.g., in nitrogen, at low temperature; an electrode paste; and electronic parts using it. The electrode of the present invention contains at least metallic particles and an oxide phase, wherein the metallic particles contain copper and aluminum, and the oxide phase contains phosphorus. The oxide phase is preferably present as a phosphate glass phase in grain boundaries of the metallic particles. The electrode preferably contains the metallic particles and oxide phase at respective 75 to 95% and 5 to 25%, all percentages by volume.

Abstract: A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.

Abstract: An object of the present invention is to provide an electronic component, including a wiring that contacts a glass or a glass ceramics member, for which a Cu-based wiring material capable of suppressing generation of bubbles in the glass or the glass ceramics member and having excellent migration resistance is used. The present invention provides an electronic component including a wiring that contacts a glass or a glass ceramics member. In the electronic component, the wiring material is formed of a binary alloy made of two elements of Cu and Al, and contains not more than 50.0% by weight of Al and a balance of unavoidable impurities.

Abstract: A jet pump is disclosed through which a liquid flows. The jet pump includes a jet nozzle including an injection port for injecting the liquid. The jet pump also includes a throat pipe including a throat passage that extends linearly. The throat pipe includes a downstream side with an open part, and the liquid injected from the injection port flows into the throat passage. The liquid in the throat passage forms a liquid seal across a cross section of the throat passage to generate negative pressure, which introduces the liquid into the throat passage.