Abstract: An n-type low impurity concentration semiconductor layer is provided, by epitaxial growth or the like, on a p-type semiconductor substrate. In order to vertically form a semiconductor device in the low impurity concentration semiconductor layer, at least a p-type diffusion region is provided. In a surface of the semiconductor layer, a collector electrode and a base electrode are respectively formed in electrical connection to the n-type low impurity concentration semiconductor layer and the p-type diffusion region. The collector electrode is formed on a surface of the n+-type low resistance region of a polycrystal semiconductor formed depthwise in the low impurity concentration semiconductor layer.

Abstract: An n-type low impurity concentration semiconductor layer is provided, by epitaxial growth or the like, on a p-type semiconductor substrate. In order to vertically form a semiconductor device in the low impurity concentration semiconductor layer, at least a p-type diffusion region is provided. In a surface of the semiconductor layer, a collector electrode and a base electrode are respectively formed in electrical connection to the n-type low impurity concentration semiconductor layer and the p-type diffusion region. The collector electrode is formed on a surface of the n+-type low resistance region of a polycrystal semiconductor formed depthwise in the low impurity concentration semiconductor layer.

Abstract: A semiconductor chip 10 is provided to form a large number of cells constituting transistor units arranged on a planar and rectangular semiconductor substrate. On the front surface of the semiconductor chip 10, an emitter electrode 1 to be connected to an emitter and a base electrode 2 to be connected to an base are formed and electrode pads 1a and 2a of the emitter electrode 1 and the base electrode 2 are formed on opposite long sides of the rectangular substrate. On the rear surface of the semiconductor chip 10, a collector electrode 3 to be connected to a collector is formed. The semiconductor chip 10 is bonded to a rectangular island 6a at the tip of a third lead 6. A first lead 4 and a second lead 5 are directly connected to the emitter electrode pad 1a and base electrode pad 2a, respectively.

Abstract: A semiconductor chip 10 is provided to form a large number of cells constituting transistor units arranged on a planar and rectangular semiconductor substrate. On the front surface of the semiconductor chip 10, an emitter electrode 1 to be connected to an emitter and a base electrode 2 to be connected to an base are formed and electrode pads 1a and 2a of the emitter electrode 1 and the base electrode 2 are formed on opposite long sides of the rectangular substrate. On the rear surface of the semiconductor chip 10, a collector electrode 3 to be connected to a collector is formed. The semiconductor chip 10 is bonded to a rectangular island 6a at the tip of a third lead 6. A first lead 4 and a second lead 5 are directly connected to the emitter electrode pad 1a and base electrode pad 2a, respectively.