Abstract: A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20?a?0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05?b?0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001?c?0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.

Abstract: A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.

Abstract: A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

Abstract: A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: The invention provides a low-friction sliding mechanism, a low-friction agent composition, a friction reduction method, a manual transmission and a final reduction gear unit that can exert very excellent low friction characteristics to sliding surfaces present under various applications, and, in particular, that have more excellent low friction characteristics than that of a combination of an existing steel material and an organic Mo compound. The low-friction sliding mechanism has an oxygen-containing organic compound or an aliphatic amine compound interposed between sliding surfaces that a DLC coated sliding member and a sliding member form. The low-friction agent composition contains an oxygen-containing organic compound or an aliphatic amine compound. The friction reduction method includes supplying the low-friction agent composition between sliding surfaces that a DLC coated sliding member and a sliding member form.

Abstract: An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

Abstract: A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

Abstract: A low-friction sliding mechanism includes first and second sliding members having respective sliding surfaces slidable relative to each other and a lubricant applied to the sliding surfaces of the first and second sliding members. At least the sliding surface of the first sliding member is made of a diamond-like carbon material, and at least the sliding surface of the second sliding member is made of either an aluminum-based alloy material, a magnesium-based alloy material or a diamond-like carbon material. The lubricant contains a base oil and at least one of an ashless fatty-ester friction modifier and an ashless aliphatic-amine friction modifier.

Abstract: An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

Abstract: Provided is a method for producing an optical fiber preform including a dehydration step and a sintering step. In the dehydration step, a porous glass base material is provided to a furnace core tube of a dehydration-sintering furnace, and the porous glass base material is dehydrated using a dehydration agent added with an argon gas. In the sintering step, the porous glass base material dehydrated in the dehydration step is sintered. Further, in the dehydration step, a temperature of the porous glass base material begins to be increased in a condition such that a high heat conductivity gas, having a heat conductivity higher than a heat conductivity of the argon gas, is remaining inside the porous glass base material.

Abstract: When attempt is made to insert a fitting-shaft section into a fitting-hole section in a state where phases of the fitting-shaft section of a spring-screw and the fitting-hole section of an adapter about a central-axis line of a spool-body are not matched, shaft-section-side inclined-surfaces formed at shaft-section-side protrusions abut to hole-section-side inclined-surfaces formed at hole-section-side protrusions, so the shaft-section-side inclined-surfaces press the hole-section-side inclined-surfaces in such a direction inclined in a pull-out direction to a projecting-direction of a shaft-section body from a flange section.

Abstract: A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure.

Abstract: A PDP and a manufacturing method for the PDP are provided, the PDP being capable of suppressing discharge delay due to improved discharge properties of a protective layer, and exhibiting superior image display performance despite having a high-definition cell structure. A magnesium oxide powder layer (16) is formed by distributing magnesium oxide particles (16a) flatly on a surface layer (8). Each of the magnesium oxide particles (16a) includes halogen atoms at and in a vicinity of the surface thereof. The magnesium oxide particles (16a) are manufactured such that the halogen atoms exist particularly at the surface of each of magnesium oxide particles (16a) through to a depth of 4 nm or less toward the core of each of the magnesium oxide particles (16a).

Abstract: A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.

Abstract: A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: The objective of the present invention is to provide a product that is superior in barrier properties (for example, zinc erosion resistance and anti-adhesive property), abrasion resistant property, surface hardening property, thermal stability and life-time prolonging property. The product, which is made in direct contact with molten metal containing zinc in a molten state, is characterized by including an iron-tungsten alloy coating that is applied to a part or the whole of the surface of the product that comes directly in contact with the molten metal.

Abstract: A low-friction sliding mechanism includes first and second sliding members having respective sliding surfaces slidable relative to each other and a lubricant applied to the sliding surfaces of the first and second sliding members. At least the sliding surface of the first sliding member is made of a diamond-like carbon material, and at least the sliding surface of the second sliding member is made of either an aluminum-based alloy material, a magnesium-based alloy material or a diamond-like carbon material. The lubricant contains a base oil and at least one of an ashless fatty-ester friction modifier and an ashless aliphatic-amine friction modifier.

Abstract: There is provided a resist underlayer film which does not intermix with a photoresist coated and formed as the overlying layer and which dissolves in an alkaline developer and can be developed and removed at the same time as the photoresist; and a resist underlayer film-forming composition for forming such a resist underlayer film. A resist underlayer film-forming composition for use in a lithographic process for manufacturing a semiconductor device, containing: (A) a branched polyhydroxystyrene in which an ethylene repeating unit on a polyhydroxystyrene moiety is bonded to a benzene ring on a different polyhydroxystyrene moiety; (B) a compound having at least two vinyl ether groups; and (C) a photoacid generator.