Abstract: A joint connector according to the present invention is provided with a circuit board, a male connector having male terminals provided on the circuit board at a predetermined interval and standing in one direction and a direction that crosses the one direction, the male terminals being selectively connected by a copper foil circuit, and a female connector in which female connector elements each having female terminals inserted and interlocked in female terminal holders are stacked, wherein the male connector and the female connector are fit to each other. This achieves cost reduction and improvement in work efficiency in electric wire connection by attaining easy electric wire connection and branching.

Abstract: The present invention relates to compounds represented by formula (1) and a process for producing the same. The use of these compounds can realize the production of carbapenem derivatives having potent antimicrobial activity and a wide antimicrobial spectrum in a safe and cost-effective manner.

Abstract: An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2×1015 cm?3 or higher. The semiconductor is present in the electron emitting portion.

Abstract: An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties.

Abstract: This method of forming a carbonaceous material projection structure includes: the step of applying a resist 11 onto a diamond substrate 10; the step of forming holes 12 in the applied resist 11, the holes 12 being provided according to a predetermined arrangement, a wall 12b of each of the holes 12 being inversely tapered from an aperture 12a toward a bottom; the step of depositing a mask material through the aperture 12a to form a mask deposition 14 in each of the holes 12; the step of lifting off a mask material 13 deposited on the resist 11 together with the resist 11; and etching the diamond substrate 10 using the mask deposition 14 as a mask to form a carbonaceous material projection.

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract: A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si(111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

Abstract: By providing a substrate that can be used as an electrode, the invention solves the problem of corrosion of the substrate itself during an electrochemical oxidation treatment, the problem of discontinued electrolysis caused by delamination between a diamond layer and a substrate, or the problem of severely impaired electrolysis efficiency. The present invention is a diamond-covered substrate comprising a substrate and a conductive diamond layer covering the substrate, wherein the largest area of the portion where the diamond comprising the diamond layer is continuous ranges from 1 ?m2 to 1,000 ?m2. Preferably, the substrate is porous and has open pores, and the open pores preferably have a diameter from 0.1 ?m to 1,000 ?m.

Abstract: A diamond electrode having a sufficiently low resistance is disclosed which is realized by increasing the amount of boron added thereto. A method for producing a high-performance, high-durability electrode is also disclosed by which adhesiveness between a diamond coating and a substrate and separation resistance during electrolysis are sufficiently increased. An electrode composed of a substrate and a diamond layer coating the substrate is characterized in that the electrode is composed of a base coated with diamond and the diamond contains boron in such an amount that the boron concentration is not less than 10,000 ppm but not more than 100,000 ppm. The base is preferably made of an insulating material.

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract: The present invention relates to a diamond n-type semiconductor in which the amount of change in carrier concentration is fully reduced in a wide temperature range. The diamond n-type semiconductor comprises a diamond substrate, and a diamond semiconductor formed on a main surface thereof and turned out to be n-type. The diamond semiconductor exhibits a carrier concentration (electron concentration) negatively correlated with temperature in a part of a temperature region in which it is turned out to be n-type, and a Hall coefficient positively correlated with temperature. The diamond n-type semiconductor having such a characteristic is obtained, for example, by forming a diamond semiconductor doped with a large amount of a donor element while introducing an impurity other than the donor element onto the diamond substrate.

Abstract: A joint connector according to the present invention is provided with a circuit board, a male connector having male terminals provided on the circuit board at a predetermined interval and standing in one direction and a direction that crosses the one direction, the male terminals being selectively connected by a copper foil circuit, and a female connector in which female connector elements each having female terminals inserted and interlocked in female terminal holders are stacked, wherein the male connector and the female connector are fit to each other. This achieves cost reduction and improvement in work efficiency in electric wire connection by attaining easy electric wire connection and branching.

Abstract: Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 1017 cm?3 or more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

Abstract: A method of manufacturing a wiring board including: providing a substrate including a base substrate, a conductive film formed on a surface of the base substrate, and a plurality of leads formed on the conductive film; forming a resist layer which partially covers the conductive film in a region between two adjacent leads of the plurality of leads so that the resist layer contacts the two leads; patterning the conductive film to form a conductive pattern which electrically connects the leads; electroplating the leads by causing an electric current to flow through the leads via the conductive pattern; and cutting the conductive pattern to electrically insulate the leads.

Abstract: An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

Abstract: A groove is formed on a semiconductor substrate having integrated circuits and electrodes from a first surface. An insulating layer is formed on an inner surface of the groove. A conductive layer is formed on the insulating layer above the inner surface of the groove. A second surface of the semiconductor substrate opposite to the first surface is ground until the groove is exposed to divide the semiconductor substrate into a plurality of semiconductor chips in which the conductive layer is exposed on a side surface of each semiconductor chip. The semiconductor chips are then stacked. The conductive layer of one of the semiconductor chips is electrically connected to the conductive layer of another one of the semiconductor chips.

Abstract: An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

Abstract: A diamond electron emission element is provided with a substrate, and a plurality of quadrangular columns (microscopic projections) composed of diamond and with side faces of flat faces, which are arranged at equal intervals on the substrate. A top end face (horizontal section) is of a quadrangular shape having a length of long sides being a [nm] and a length of short sides being ka [nm], and a thin film of SiO2 is formed on a side face on the short-edge side. The length a [nm] of long sides and the length ka [nm] of short sides satisfy relational expressions of Formulae (1) and (2) below. C1=2a?{square root over (1+k2)}??(1) n?=C1??(2) C1: a distance [nm] of a lap in a situation where light generated inside each quadrangular column goes around on a specific circuit while being reflected on the side faces of the quadrangular column, n: an arbitrary positive integer, and ?: an emission peak wavelength ? [nm] of the diamond making the quadrangular columns.

Abstract: An electron emission device which is smaller, able to operate at lower voltage and more efficient than the conventional device is provided. The device contains a light emitting device to irradiate light to a cathode wherein at least an electron emission face of the cathode is made of diamond. By composing the device in such a way, the voltage to draw out electrons can be lowered with a wide margin compared to the conventional device, and thus a small device which can be operated with low voltage may be obtained. The light emitting device can be formed as one unit with the cathode and it can also be that the light emitting device and the electrode are made of diamond. Furthermore, the electron emission face of the cathode is preferably an n- or p-type diamond semiconductor.

Abstract: The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 ?m at maximum per a thickness of 100 ?m across an entire of the single crystalline diamond, and also a method for producing the diamond.