Abstract: There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where A? is Formula (2) or Formula (3): E is Formula (4) or Formula (5): R1 and R2 are each independently a C1-5 alkyl group, R3 is a hydrogen atom or a methyl group, R4 and R5 are each independently a C1-5 alkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).

Abstract: There is provided a novel polymer, a composition containing the polymer, and a novel adhesive composition containing the polymer from which a cured film having desired properties is obtained. A polymer comprising a structural unit of Formula (1): wherein Q is a bivalent group, R1 is a C1-10 alkylene group, a C2-10 alkenylene group or C2-10 alkynylene group, a C6-14 arylene group, a C4-10 cyclic alkylene group, etc., or a polymer comprising a structural unit of Formula (6): wherein Q4 is an allyl group, a vinyl group, an epoxy group, or a glycidyl group, and R5 is a bivalent organic group having a main chain containing only carbon atom or at least one of oxygen atom, nitrogen atom and sulfur atom in addition to carbon atom, a composition comprising the polymer, and an adhesive composition comprising the polymer and a solvent.

Abstract: There is provided a photosensitive resin composition for microlenses. A photosensitive resin composition for microlenses including a component (A), a component (B) and a solvent. The component (A): a copolymer having a maleimide structural unit of Formula (1) and a repeating structural unit of Formula (2). The component (B): a photosensitizer (in Formula (2), R0 is a hydrogen atom or a methyl group; R1 is a single bond or a C1-5 alkylene group; R2 is a thermally cross-linkable monovalent organic group; and in the repeating structural unit of Formula (2), R0s are optionally different from each other).

Abstract: A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3-a)]b(R3)??Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

Abstract: It is an object to provide a novel forming agent for a gate insulating film that not only provides high insulating properties for the gate insulating film but also takes account of the electric characteristics of a thin film transistor element. A forming agent for a gate insulating film of a thin film transistor characterized by comprising an oligomer compound or a polymer compound including a structural unit containing a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom; a gate insulating film formed by the forming agent; and a thin film transistor.

Abstract: A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C4-20 fluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E).

Abstract: There is provided a photosensitive resin composition having desired properties. A photosensitive resin composition comprising: a component (A) that is a copolymer including a structural unit of Formula (1) and at least one structural unit of Formula (2), and a component (B) that is a photosensitizer: (where two Xs are independently a hydrogen atom, a C1-5 alkyl group, a C5-6 cycloalkyl group, a phenyl group, or a benzyl group and Y is a hydrogen atom, a C1-5 alkyl group, a C5-6 cycloalkyl group, a phenyl group, or a benzyl group provided that each of a part or all of the hydrogen atoms in the alkyl group, the cycloalkyl group, the phenyl group, and the benzyl group is optionally substituted with a halogen atom, a carboxy group, a hydroxy group, an amino group, or a nitro group).

Abstract: A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator.

Abstract: There is provided a novel composition for forming a gate insulating film taking into consideration also electrical characteristics after other processes such as wiring by irradiation with an ultraviolet ray and the like during the production of an organic transistor using a gate insulating film. A composition for forming a gate insulating film for a thin-film transistor comprising: a component (i): an oligomer compound or a polymer compound containing a repeating unit having a structure in which a nitrogen atom of a triazine-trione ring is bonded to a nitrogen atom of another triazine-trione ring through a hydroxyalkylene group; and a component (ii): a compound having two or more blocked isocyanate groups in one molecule thereof.

Abstract: There is provided a photosensitive resin composition for microlenses. A photosensitive resin composition for microlenses including a component (A), a component (B) and a solvent. The component (A): a copolymer having a maleimide structural unit of Formula (1) and a repeating structural unit of Formula (2). The component (B): a photosensitizer (in Formula (2), R0 is a hydrogen atom or a methyl group; R1 is a single bond or a C1-5 alkylene group; R2 is a thermally cross-linkable monovalent organic group; and in the repeating structural unit of Formula (2), R0s are optionally different from each other).

Abstract: There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.

Abstract: There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound).

Abstract: Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like.

Abstract: There is provided a novel gate insulating film forming material in consideration of not only initial electric properties immediately after the production of a gate insulating film, but also electric properties after other steps are performed while producing a thin-film transistor using the gate insulating film, and even reliability in the electric properties of the produced element. A gate insulating film forming agent for a thin-film transistor comprising an oligomer compound or a polymer compound, both of which contain a repeating unit having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent; a gate insulating film produced from the gate insulating film forming agent; a thin-film transistor having the gate insulating film; and a method for producing the gate insulating film or thin-film transistor.

Abstract: A composition for forming a photosensitive resist underlayer film and a method for forming a resist pattern. The composition for forming a photosensitive resist underlayer film includes a polymer having a structural unit of Formula (1), a compound having at least two vinyl ether groups, a photo-acid generator; and a solvent: where R1 is a hydrogen atom or a methyl group, R2 is a C1-4 alkyl group, and i is an integer of 0 to 4.

Abstract: A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20?a?0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05?b?0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001?c?0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.

Abstract: There is provided a photosensitive resin composition having desired properties. A photosensitive resin composition comprising: a component (A) that is a copolymer including a structural unit of Formula (1) and at least one structural unit of Formula (2), and a component (B) that is a photosensitizer: (where two Xs are independently a hydrogen atom, a C1-5 alkyl group, a C5-6 cycloalkyl group, a phenyl group, or a benzyl group and Y is a hydrogen atom, a C1-5 alkyl group, a C5-6 cycloalkyl group, a phenyl group, or a benzyl group provided that each of a part or all of the hydrogen atoms in the alkyl group, the cycloalkyl group, the phenyl group, and the benzyl group is optionally substituted with a halogen atom, a carboxy group, a hydroxy group, an amino group, or a nitro group).

Abstract: There is provided a photosensitive resin composition for a microlens. A photosensitive resin composition for a microlens, comprising a component (A), a component (B) and a component (C), wherein the component (A) is a polymer having a maleimide structural unit of Formula (1), the component (B) is a cross-linking agent, and the component (C) is a photosensitizing agent.

Abstract: There is provided a novel composition for forming a gate insulating film taking into consideration also electrical characteristics after other processes such as wiring by irradiation with an ultraviolet ray and the like during the production of an organic transistor using a gate insulating film. A composition for forming a gate insulating film for a thin-film transistor comprising: a component (i): an oligomer compound or a polymer compound containing a repeating unit having a structure in which a nitrogen atom of a triazine-trione ring is bonded to a nitrogen atom of another triazine-trione ring through a hydroxyalkylene group; and a component (ii): a compound having two or more blocked isocyanate groups in one molecule thereof.

Abstract: A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C4-20 fluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E).