Abstract: A flush toilet includes a toilet main body made of ceramics and a rear storage configured to store at least a part of a control unit. The rear storage includes a supporting wall that divides a storage region into upper and lower regions and that joins left and right side walls of the skirt and the water discharge trap. The supporting wall includes a horizontal wall that extends in a horizontal direction from a joining portion between the supporting wall and the water discharge trap, and left and right lower walls that are provided outside the horizontal wall in a left-right direction and below the horizontal wall and that are joined to the left and right side walls of the skirt. The left and right lower walls on a rear side are separated in the left-right direction by the horizontal wall.

Abstract: A flush toilet includes a toilet main body and a control unit. The toilet main body includes a skirt, a rear storage configured to store at least a part of the control unit, and an opening to which a drain pipe is connected is formed penetrating, in a front-rear direction, a portion below a center in a left-right direction of a rear wall of the skirt. The rear storage forms a discharge socket storage on a front side of the opening in a region below a center of the rear storage in the left-right direction. And a side wall surface in the discharge socket storage protrudes more in a center direction of the opening than a side wall surface in the opening, to reduce an opening cross-sectional area of the discharge socket storage to be smaller than an opening cross-sectional area of the opening.

Abstract: A flush toilet includes a toilet main body made of ceramics including a skirt and a rear storage configured to store at least a part of a control unit. The skirt includes a rear wall and a side wall provided in a back surface and a side surface of the toilet main body, respectively. The rear wall includes an opening provided between a peripheral edge of each opening and the side wall of the skirt. The opening penetrates in a front-rear direction to communicate between an inner region of the rear storage or an outer region below the inner region and an outer region behind the toilet main body. The skirt further includes a cross beam that joinably or coupleably supports the peripheral edge of the opening and the side wall of the skirt to each other so as to reinforce strength of the toilet main body.

Abstract: A flush toilet includes a rear storage configured to store a control unit of a toilet main body. The rear storage includes a supporting wall configured to support the control unit so as to divide a storage region of the rear storage into upper and lower regions. In a rear supporting region of the rear storage, a first distance in a horizontal left-right direction from an outer joining portion to an inner joining portion in the supporting wall is shorter than a second distance in the horizontal left-right direction from an outer wall in the double wall of the skirt to an inner joining portion of the supporting wall. The second distance is set to a maximum width dimension in the left-right direction in an internal space of the double wall of the skirt.

Abstract: A flush toilet in which a comparatively large storage region that stores a functional unit can be formed in a region in more rear side than a bowl of a toilet main body, while improving designability of the whole flush toilet is provided. A toilet main body of a flush toilet includes a skirt and a rear function storage portion, the skirt includes an opening, the opening being formed in a portion of an upper part of an outer wall of the skirt, the opening allowing the rear function storage portion inside the skirt to open toward outside the skirt, and a part of the functional unit stored in the rear function storage portion forms an outer surface to close the opening.

Abstract: A semiconductor device includes a ferroelectric memory having a ferroelectric film between a gate electrode and a semiconductor substrate. The ferroelectric film and a metal film are not formed just above an element isolation region formed in a trench in an upper surface of the semiconductor substrate, but are formed on the semiconductor substrate in the active region defined by the element isolation region to prevent a state in which a polarization state in the ferroelectric film of the active region and a polarization state in the ferroelectric film on the element isolation region differ from each other.

Abstract: A terminal-equipped wire (1) includes a connector terminal (2), a wire (3), a relay conductor (4) and a sealing member (5). The connector terminal (2) is arranged in an insertion hole (71) provided in a connector case (7). The wire (3) is formed by bundling a plurality of conductors (31). The relay conductor (4) is composed of one conductor and electrically connects the connector terminal (2) and the wire (3). The sealing member (5) is mounted on the outer periphery of the relay conductor (4) and arranged in the insertion hole (71) to close a clearance (S1) between the inner periphery of the sealing member (5) and the outer periphery of the relay conductor (4) and a clearance (S2) between the outer periphery of the sealing member (5) and the inner periphery of the insertion hole (71).

Abstract: The present invention aims to provide a fucose-binding protein that shows improved productivity in cases of expression in a host such as Escherichia coli, improved binding affinity to a fucose-containing sugar chain such as a sugar chain containing a structure composed of Fuc?1-2Gal?1-3GlcNAc and/or Fuc?1-2Gal?1-3GalNAc, and/or improved thermal stability.

Abstract: A connector holding structure is provided with a plurality of connectors to be connected to a plurality of mating connectors arranged in an arrangement direction, a plurality of wires drawn out from the plurality of connectors, and a connector holding member including a plurality of connector mounting portions for respectively holding the plurality of connectors, the connector holding member collectively holding the plurality of connectors. The connector holding member includes a deflectable and deformable flexible portion between adjacent ones of the plurality of connector mounting portions.

Abstract: A manufacturing method of a semiconductor device includes: (a) forming a gate structure for a control gate electrode on a semiconductor substrate; (b) forming a charge storage film so as to cover a first side surface, a second side surface, and an upper surface of the gate structure; (c) forming a conductive film for a memory gate electrode on the charge storage film; (d) removing a part of the charge storage film and a part of the conductive film such that the charge storage film and the conductive film remain in this order on the first side surface and the second side surface of the gate structure, thereby forming the memory gate electrode; and (e) removing apart of the gate structure separate from the first side surface and the second side surface such that a part of the semiconductor substrate is exposed from the gate structure.

Abstract: A connector holding structure is provided with a plurality of connectors to be connected to a plurality of mating connectors arranged in an arrangement direction, a plurality of wires drawn out from the plurality of connectors, and a connector holding member including a plurality of connector mounting portions for respectively holding the plurality of connectors, the connector holding member collectively holding the plurality of connectors. The connector holding member includes a deflectable and deformable flexible portion between adjacent ones of the plurality of connector mounting portions.

Abstract: A terminal-equipped wire (1) includes a connector terminal (2), a wire (3), a relay conductor (4) and a sealing member (5). The connector terminal (2) is arranged in an insertion hole (71) provided in a connector case (7). The wire (3) is formed by bundling a plurality of conductors (31). The relay conductor (4) is composed of one conductor and electrically connects the connector terminal (2) and the wire (3). The sealing member (5) is mounted on the outer periphery of the relay conductor (4) and arranged in the insertion hole (71) to close a clearance (S1) between the inner periphery of the sealing member (5) and the outer periphery of the relay conductor (4) and a clearance (S2) between the outer periphery of the sealing member (5) and the inner periphery of the insertion hole (71).

Abstract: It is aimed to provide a harness component capable of preventing liquid penetration from between conductors of wires to a mating connector on which a connector case is mounted, and improving workability and productivity during manufacturing. A harness component (1) includes a connector case (7), a plurality of connector terminals (2) arranged in the connector case (7), a plurality of wires (3) electrically connected to the connector terminals (2) and sealing members (5) arranged in clearances between mounting portions (24) formed on the respective connector terminals (2) and the connector case (7). An outer peripheral surface of the mounting portion (24) and an inner peripheral surface of the sealing member (5) and an outer peripheral surface of the sealing member (5) and an inner peripheral surface of the connector case (7) are in close contact with each other. The connector terminal (2) is formed with a penetration preventing portion (251) for preventing liquid penetration.

Abstract: A heat conductive sheet comprising a cured product layer of a heat conductive silicone composition on one or both surfaces of a glass cloth sealed using a cured product of a heat conductive resin composition. The heat conductive silicone composition includes an organic silicon compound component and an aspherical heat conductive filler. The amount of the heat conductive filler is 250 to 600 parts by mass with respect to 100 parts by mass of the organic silicon compound component, and the heat conductive filler has a DOP oil absorption of not more than 80 ml/100 g. The heat conductive sheet can be continuously manufactured by coating molding and wound into a roll even with the use of an inexpensive aspherical heat conductive filler, and has high heat conductivity, low thermal contact resistance, and high insulating properties.

Abstract: A substrate including an insulating layer, a semiconductor layer, and an insulating film stacked on a semiconductor substrate and having a trench filled with an element isolation portion is provided. After removal of the insulating film from a bulk region by a first dry etching, the semiconductor layer is removed from the bulk region by a second dry etching. Then, the insulating film in an SOI region and the insulating layer in the bulk region are removed. A gas containing a fluorocarbon gas is used for first dry etching. The etching thickness of the element isolation portion by a first dry etching is at least equal to the sum of the thicknesses of the insulating film just before starting the first dry etching and the semiconductor layer just before starting the first dry etching. After first dry etching and before second dry etching, oxygen plasma treatment is performed.

Abstract: The present invention provides a laminated member that prevents contact of a semiconductor chip and an external leading terminal etc. without increasing the number of components. The laminated member is a laminated member having a three-layer structure, comprising: an upper highly thermally conductive layer; a lower highly thermally conductive layer; and an intermediate layer having a low thermal expansion coefficient, wherein the above-described laminated member is larger than the above-described semiconductor chip in a plan view, and wherein a height position of the above-described first peripheral edge area is located at a certain distance below a height position of the above-described first bonding area, and a height position of the second peripheral edge area of the above-described second bonding area is located at a certain distance above a height position of the above-described second bonding area.

Abstract: A thermally conductive sheet including a glass cloth filled with a thermally conductive resin composition, one or both surfaces of the glass cloth being layered with a cured, thermally conductive silicone composition, wherein the thermally conductive silicone composition comprises a silicone component and thermally conductive filler (C) of an amount of 1,200 to 2,000 parts by mass, relative to 100 parts by mass of the silicone component, the thermally conductive filler (C) has an average particle size smaller than 15 ?m, and an amount of particles having a particle size of 45 ?m or larger is 0 to 3 mass % and an amount of particles having a particle size of 75 ?m or larger is 0 to 0.01 mass %, based on an amount of the thermally conductive filler (C).

Abstract: A heat conductive sheet comprising a cured product layer of a heat conductive silicone composition on one or both surfaces of a glass cloth sealed using a cured product of a heat conductive resin composition. The heat conductive silicone composition includes an organic silicon compound component and an aspherical heat conductive filler. The amount of the heat conductive filler is 250 to 600 parts by mass with respect to 100 parts by mass of the organic silicon compound component, and the heat conductive filler has a DOP oil absorption of not more than 80 ml/100 g. The heat conductive sheet can be continuously manufactured by coating molding and wound into a roll even with the use of an inexpensive aspherical heat conductive filler, and has high heat conductivity, low thermal contact resistance, and high insulating properties.

Abstract: A circuit unit (10) includes a circuit body (11) having a resin portion (12) covering a circuit, first terminals (15) projecting from one edge of the resin portion (12) and second terminals (16) projecting from another edge part of the resin portion (12). A fixing member (20) made of metal is configured to fix the circuit body (11) to a base member (BM) by being mounted on the base member (BM) while being held in contact with the resin portion (12). A cover (30) having receptacles (35, 36) is fit to mating connectors (50A, 50B) while covering the first and second terminals (15, 16). The cover (30) is configured to cover the circuit body (11) and the fixing member (20). The cover (30) is formed with an opening (33) for exposing the fixing member (20) to outside.

Abstract: A substrate including an insulating layer, a semiconductor layer, and an insulating film stacked on a semiconductor substrate and having a trench filled with an element isolation portion is provided. After removal of the insulating film from a bulk region by a first dry etching, the semiconductor layer is removed from the bulk region by a second dry etching. Then, the insulating film in an SOI region and the insulating layer in the bulk region are removed. A gas containing a fluorocarbon gas is used for first dry etching. The etching thickness of the element isolation portion by a first dry etching is at least equal to the sum of the thicknesses of the insulating film just before starting the first dry etching and the semiconductor layer just before starting the first dry etching. After first dry etching and before second dry etching, oxygen plasma treatment is performed.