Abstract: An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.

Abstract: An on-board device is loaded in a moving vehicle and includes a control device configured to control the traveling of the moving vehicle. In the control device, an in-field traveling instructing section determines whether a blockade moving vehicle exists to hinder the traveling of the moving vehicle on a traveling route to an inspection field in a railyard, based on different moving vehicle related data in the railyard when the moving vehicle is an inspection waiting vehicle. A traveling route securing section requests securement of the traveling route to a railyard interface device that controls branching on the traveling route when there is not the blockade moving vehicle on the traveling route. A traveling permission section permits the traveling of the moving vehicle on the secured route based on traveling route state data from the railyard interface device.

Abstract: A circuit unit (10) includes a circuit body (11) having a resin portion (12) covering a circuit, first terminals (15) projecting from one edge of the resin portion (12) and second terminals (16) projecting from another edge part of the resin portion (12). A fixing member (20) made of metal is configured to fix the circuit body (11) to a base member (BM) by being mounted on the base member (BM) while being held in contact with the resin portion (12). A cover (30) having receptacles (35, 36) is fit to mating connectors (50A, 50B) while covering the first and second terminals (15, 16). The cover (30) is configured to cover the circuit body (11) and the fixing member (20). The cover (30) is formed with an opening (33) for exposing the fixing member (20) to outside.

Abstract: The present invention provides a laminated member that prevents contact of a semiconductor chip and an external leading terminal etc. without increasing the number of components. The laminated member is a laminated member having a three-layer structure, comprising: an upper highly thermally conductive layer; a lower highly thermally conductive layer; and an intermediate layer having low thermal expansion coefficient, wherein the above-described laminated member is larger than the above-described semiconductor chip in a plan view, and wherein a height position of the above-described first peripheral edge area is located at certain distance below a height position of the above-described first bonding area, and a height position of the second peripheral edge area of the above-described second bonding area is located at certain distance above a height position of the above-described second bonding area.

Abstract: An improvement is achieved in the performance of a semiconductor device. Over a first insulating film formed over a main surface of a semiconductor substrate located in a memory formation region and having an internal charge storage portion and over a second insulating film formed over the main surface of the semiconductor substrate located in a main circuit formation region, a conductive film is formed. Then, in the memory formation region, the conductive film and the first insulating film are patterned to form a first gate electrode and a first gate insulating film while, in the main circuit formation region, the conductive film and the second insulating film are left. Then, in the main circuit formation region, the conductive film and the second insulating film are patterned to form a second gate electrode and a second gate insulating film.

Abstract: A signaling system includes an on-board device, a station interface device and a platform screen door. The on-board device is provided in a moving vehicle. The station interface device is provided in a station. The platform screen door is provided in the station and controlled by the station interface device. When the moving vehicle has stopped at the station, the on-board device outputs a door open permission command to instruct release of a lock state. The station interface device releases the lock state of the platform screen door in response to the door open permission command. After the lock state is released, the on-board device outputs a door open command to instruct the opening of the platform screen door. The station interface device opens the platform screen door in response to the door open command. The on-board device opens doors of the moving vehicle.

Abstract: A cap unit is provided which provides improved convenience. The cap unit is attached in a detachable manner to a neck portion of a container main body, an upper portion of which is open. The cap unit includes a cap main body that blocks an upper opening of the container main body and in which a liquid flow spout is provided in an upper portion, and a lid that opens and closes the liquid flow spout in a state of being attached to the cap main body in a rotating manner using a hinge portion, in which a maintaining member maintains an open state of the lid at a position at which the lid opens the liquid flow spout is provided in the hinge portion.

Abstract: An object of embodiments of the invention is to provide a cap unit having a compact hinge structure having efficient design properties by consolidating functions in a hinge portion, and the present invention provides a cap unit which is configured to be attached to a neck portion of a container main body. The cap unit may include a liquid flow spout provided in an upper portion, and a lid that opens and closes the liquid flow spout in a state of being attached to the cap main body in a freely rotating manner using a hinge portion, in which a first biasing member, which biases the lid toward a rotating direction, and a second biasing member, which biases the lid toward a rotating shaft direction, are provided in the hinge portion.

Abstract: A thermally conductive sheet including a glass cloth filled with a thermally conductive resin composition, one or both surfaces of the glass cloth being layered with a cured, thermally conductive silicone composition, wherein the thermally conductive silicone composition comprises a silicone component and thermally conductive filler (C) of an amount of 1,200 to 2,000 parts by mass, relative to 100 parts by mass of the silicone component, the thermally conductive filler (C) has an average particle size smaller than 15 ?m, and an amount of particles having a particle size of 45 ?m or larger is 0 to 3 mass % and an amount of particles having a particle size of 75 ?m or larger is 0 to 0.01 mass %, based on an amount of the thermally conductive filler (C).

Abstract: A switching mechanism is configured to switch an advancing direction of water injected from a nozzle by moving between a first position and a second position. The switching mechanism is held at the second position by a force received from the water injected by the nozzle during the tank water feeding process. A refill mechanism has a refill pipe for causing the water injected from the nozzle during the tank water feeding process and whose advancing direction is switched by the switching mechanism to flow in through an inflow port on one end side. The refill pipe is configured to lead the water having flowed in through the inflow port to a toilet stool body without flowing through a suction port of a throat pipe.

Abstract: An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.

Abstract: An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.

Abstract: A switching mechanism is configured to switch an advancing direction of water injected from a nozzle by moving between a first position and a second position. The switching mechanism is held at the second position by a force received from the water injected by the nozzle during the tank water feeding process. A refill mechanism has a refill pipe for causing the water injected from the nozzle during the tank water feeding process and whose advancing direction is switched by the switching mechanism to flow in through an inflow port on one end side. The refill pipe is configured to lead the water having flowed in through the inflow port to a toilet stool body without flowing through a suction port of a throat pipe.

Abstract: An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.

Abstract: An improvement is achieved in the performance of a semiconductor device. Over a first insulating film formed over a main surface of a semiconductor substrate located in a memory formation region and having an internal charge storage portion and over a second insulating film formed over the main surface of the semiconductor substrate located in a main circuit formation region, a conductive film is formed. Then, in the memory formation region, the conductive film and the first insulating film are patterned to form a first gate electrode and a first gate insulating film while, in the main circuit formation region, the conductive film and the second insulating film are left. Then, in the main circuit formation region, the conductive film and the second insulating film are patterned to form a second gate electrode and a second gate insulating film.

Abstract: A signaling system includes an on-board device, a station interface device and a platform screen door. The on-board device is provided in a moving vehicle. The station interface device is provided in a station. The platform screen door is provided in the station and controlled by the station interface device. When the moving vehicle has stopped at the station, the on-board device outputs a door open permission command to instruct release of a lock state. The station interface device releases the lock state of the platform screen door in response to the door open permission command. After the lock state is released, the on-board device outputs a door open command to instruct the opening of the platform screen door. The station interface device opens the platform screen door in response to the door open command. The on-board device opens doors of the moving vehicle.

Abstract: The slit lamp microscope is capable of easily adjusting a slit-light and a backlight. The slit lamp microscope comprises: a slit lamp for emitting a slit-light; a mirror unit having a reflecting mirror or a prism, which reflects the slit-light emitted from the slit lamp toward an eye of an examinee; a microscope unit for observing the eye of the examinee; and a backlight source for emitting a backlight, which illuminates a circumference of the slit-light, toward the eye of the examinee. The backlight source is provided to the mirror unit.

Abstract: An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.

Abstract: An on-board device is loaded in a moving vehicle and includes a control device configured to control the traveling of the moving vehicle. In the control device, an in-field traveling instructing section determines whether a blockade moving vehicle exists to hinder the traveling of the moving vehicle on a traveling route to an inspection field in a railyard, based on different moving vehicle related data in the railyard when the moving vehicle is an inspection waiting vehicle. A traveling route securing section requests securement of the traveling route to a railyard interface device that controls branching on the traveling route when there is not the blockade moving vehicle on the traveling route. A traveling permission section permits the traveling of the moving vehicle on the secured route based on traveling route state data from the railyard interface device.

Abstract: A rectangular substrate 12 composed of c-plane sapphire is prepared. Nickel serving as a catalytic metal is deposited on the entirety of an upper surface of the substrate 12 to form a catalytic metal film 14 (see (a)). The catalytic metal film 14 is patterned by a lithography method into a catalytic metal film 16 having a predetermined shape (see (b)). The temperature of the catalytic metal film 16 is raised to 1000° C. and maintained at 1000° C. for 20 minutes. The temperature of the catalytic metal film 16 is lowered from 1000° C. to 800° C. at a rate of 5° C./min. The temperature of the catalytic metal film 16 is maintained at 800° C. for 15 hours. Thereby, a catalytic metal layer 17 having large grains is provided (see (c)).