Patents by Inventor Takahiro Matsuo

Takahiro Matsuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9090979
    Abstract: Disclosed is a method for producing perchlorate, which comprises: an electrolytic step (S1) wherein an electrolysis vessel (2), in which a positive electrode side (4A) on which a positive electrode (4) is arranged and a negative electrode side (5A) on which a negative electrode (5) is arranged are divided by a cation-exchange membrane (6), is used and an aqueous solution of sodium chlorate is electrolytically oxidized on the positive electrode side (4A) of the electrolysis vessel (2); a neutralization reaction step (S2) wherein a substance an aqueous solution of which shows alkalinity is added to the aqueous perchloric acid solution that has been produced by the electrolytic oxidation on the positive electrode side, so that perchlorate is synthesized by a neutralization reaction; and a crystallization process wherein the perchlorate synthesized by the neutralization reaction is obtained as crystals.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: July 28, 2015
    Assignee: IHI CORPORATION
    Inventors: Junichi Okuyama, Kumiko Yoshihisa, Yasunori Hamano, Takahiro Matsuo, Nobuhiko Kubota, Kazuo Uematsu, Muneo Ayabe
  • Patent number: 9041760
    Abstract: An optical print head, including: a light emitting substrate which includes a light emitting element on a base; a rod lens array which focuses light emitted from the light emitting element onto an image carrier, the rod lens array having a larger linear expansion coefficient than the base of the light emitting substrate; and expansion suppressing members which are attached to both lateral surfaces of the rod lens array in a direction that is perpendicular to an optical axis direction and is a shorter direction, each of the expansion suppressing members having a smaller linear expansion coefficient than the rod lens array.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: May 26, 2015
    Assignee: KONICA MINOLTA, INC.
    Inventors: Naoki Tajima, Yasushi Nagasaka, Takahiro Matsuo
  • Patent number: 8963979
    Abstract: A fixing structure for fixing an optical element at a predetermined position in an optical device, the fixing structure has a plurality of first pressing members to fix the optical element at at least two positions on a surface of the optical element orthogonal to an optical axis of the optical element and a second pressing member to fix the optical element at a predetermined position on a surface of the optical element to the optical axis. A depth of pressing of the surface of the optical element by a tip of the second pressing member is larger than the depth of pressing of the surface of the optical element by the tips of the first pressing members.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: February 24, 2015
    Assignee: Konica Minolta, Inc.
    Inventors: Naoki Tajima, Yasushi Nagasaka, Takahiro Matsuo
  • Patent number: 8879134
    Abstract: A laser scanning optical device includes: alight source having a plurality of emission points; a plate-like light source holder which holds the light source in a center of the light source holder; a base arranged to face the light source holder; and an attitude adjusting part which adjusts an attitude of the light source by adjusting a tilt of the light source holder, and the attitude adjusting part includes an inclined part and an inclination conveying part, and adjusts the tilt of the light source holder with respect to the base by displacing an abutting position of the inclined part corresponding to the inclination conveying part along an inclined surface of the inclined part.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: November 4, 2014
    Assignee: Konica Minolta Business Technologies, Inc.
    Inventors: Naoki Tajima, Yasushi Nagasaka, Takahiro Matsuo
  • Publication number: 20140160218
    Abstract: An optical print head, including: a light emitting substrate which includes a light emitting element on a base; a rod lens array which focuses light emitted from the light emitting element onto an image carrier, the rod lens array having a larger linear expansion coefficient than the base of the light emitting substrate; and expansion suppressing members which are attached to both lateral surfaces of the rod lens array in a direction that is perpendicular to an optical axis direction and is a shorter direction, each of the expansion suppressing members having a smaller linear expansion coefficient than the rod lens array.
    Type: Application
    Filed: December 9, 2013
    Publication date: June 12, 2014
    Applicant: Konica Minolta , Inc.
    Inventors: Naoki TAJIMA, Yasushi NAGASAKA, Takahiro MATSUO
  • Publication number: 20140127411
    Abstract: To fabricate a metal-supported nano-graphite with easy processing. The invention includes the steps of: using carbon nanowalls formed on a substrate to produce carbon nanowall pieces which are each composed of one or plural nano-graphite domains smaller than the carbon nanowalls; mixing metal to be supported with a liquid in which the produced carbon nanowall pieces are dispersed; and injecting a reducing agent into the liquid containing the carbon nanowall pieces and metal to cause the metal to be supported on the carbon nanowall pieces.
    Type: Application
    Filed: January 7, 2014
    Publication date: May 8, 2014
    Applicant: IHI Corporation
    Inventors: Akihiko YOSHIMURA, Takahiro MATSUO, Masaru TACHIBANA, Seog Chul SHIN
  • Patent number: 8691377
    Abstract: A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
    Type: Grant
    Filed: April 22, 2010
    Date of Patent: April 8, 2014
    Assignee: Panasonic Corporation
    Inventors: Taichi Nakamura, Akio Furusawa, Shigeaki Sakatani, Hidetoshi Kitaura, Takahiro Matsuo
  • Publication number: 20130308172
    Abstract: A fixing structure for fixing an optical element at a predetermined position in an optical device, the fixing structure has a plurality of first pressing members to fix the optical element at at least two positions on a surface of the optical element orthogonal to an optical axis of the optical element and a second pressing member to fix the optical element at a predetermined position on a surface of the optical element to the optical axis. A depth of pressing of the surface of the optical element by a tip of the second pressing member is larger than the depth of pressing of the surface of the optical element by the tips of the first pressing members.
    Type: Application
    Filed: May 16, 2013
    Publication date: November 21, 2013
    Applicant: KONICA MINOLTA, INC.
    Inventors: Naoki TAJIMA, Yasushi NAGASAKA, Takahiro MATSUO
  • Publication number: 20130277202
    Abstract: A method for manufacturing ozone ice that is improved for its storage stability is provided. In the method, ice 11 including oxygen gas g2 as gas bubbles b is produced and the produced ice 11 is irradiated with ultraviolet radiation, then the oxygen gas g2 in the ice 11 is ozonized to manufacture ozone ice 1.
    Type: Application
    Filed: June 21, 2013
    Publication date: October 24, 2013
    Applicant: IHI CORPORATION
    Inventors: Junichi Okuyama, Yasunori Hamano, Takahiro Matsuo, Yuka Yoshida, Hajime Kuwabara, Nobuhiko Kubota, Kazuo Uematsu, Kouichiro Wazumi
  • Patent number: 8535489
    Abstract: A method for manufacturing ozone ice that is improved for its storage stability is provided. In the method, ice 11 including oxygen gas g2 as gas bubbles b is produced and the produced ice 11 is irradiated with ultraviolet radiation, then the oxygen gas g2 in the ice 11 is ozonized to manufacture ozone ice 1.
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: September 17, 2013
    Assignee: IHI Corporation
    Inventors: Junichi Okuyama, Yasunori Hamano, Takahiro Matsuo, Yuka Yoshida, Hajime Kuwabara, Nobuhiko Kubota, Kazuo Uematsu, Kouichiro Wazumi
  • Patent number: 8421246
    Abstract: A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 ?m after the electronic element and the electrode are joined by the solder layer.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: April 16, 2013
    Assignee: Panasonic Corporation
    Inventors: Akio Furusawa, Shigeaki Sakatani, Taichi Nakamura, Takahiro Matsuo
  • Patent number: 8338966
    Abstract: The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
    Type: Grant
    Filed: June 17, 2010
    Date of Patent: December 25, 2012
    Assignee: Panasonic Corporation
    Inventors: Akio Furusawa, Shigeaki Sakatani, Hidetoshi Kitaura, Taichi Nakamura, Takahiro Matsuo
  • Publication number: 20120268802
    Abstract: The laser scanning optical device comprises: a light source; a collimator lens; a light source holder; a lens holder; a light source unit holder; a first rotation axis; and a second rotation axis. The light source includes a plurality of light emitting points. The collimator lens converts diverging rays irradiated from the light source into parallel rays. The light source holder holds the light source. The lens holder holds the collimator lens. The light source unit holder holds the light source holder and the lens holder. The first rotation axis rotates the collimator lens with respect to an ideal optical axis. The second rotation axis rotates the light source unit holder while constantly maintaining a positional relationship between the light source holder and the lens holder.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 25, 2012
    Inventors: Yasushi Nagasaka, Naoki Tajima, Takahiro Matsuo
  • Patent number: 8268718
    Abstract: A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
    Type: Grant
    Filed: January 17, 2011
    Date of Patent: September 18, 2012
    Assignee: Panasonic Corporation
    Inventors: Taichi Nakamura, Akio Furusawa, Shigeaki Sakatani, Hidetoshi Kitaura, Takahiro Matsuo
  • Publication number: 20120153461
    Abstract: A semiconductor component of the present invention includes a semiconductor element and a joining layer formed on one surface of the semiconductor element and consisting of a joining material containing Bi as an essential ingredient, and projecting sections are formed on a surface of the joining layer on a side opposite to a surface in contact with the semiconductor element. By joining the semiconductor component to an electrode arranged so as to face the joining layer, the generation of a void can be suppressed.
    Type: Application
    Filed: July 20, 2010
    Publication date: June 21, 2012
    Applicant: Panasonic Corporation
    Inventors: Hidetoshi Kitaura, Akio Furusawa, Shigeaki Sakatani, Taichi Nakamura, Takahiro Matsuo
  • Publication number: 20120042750
    Abstract: The present invention relates to a process for producing magnetic metal particles for magnetic recording, comprising: heat-treating goethite particles having an aluminum content of 4 to 50 atom % in terms of Al based on whole Fe to obtain hematite particles; and heat-reducing the hematite particles at a temperature of 200 to 600° C., the goethite particles being obtained by adding a peroxodisulfate to a reaction solution comprising: a ferrous salt aqueous solution and a mixed alkali aqueous solution comprising: an alkali hydrogen carbonate aqueous solution or alkali carbonate aqueous solution and an alkali hydroxide aqueous solution before initiation of an oxidation reaction of the reaction solution, and then conducting the oxidation reaction.
    Type: Application
    Filed: October 31, 2011
    Publication date: February 23, 2012
    Applicant: TODA KOGYO CORPORATION
    Inventors: Mineko OHSUGI, Toshiharu HARADA, Takahiro MATSUO, Yosuke YAMAMOTO, Kazuyuki HAYASHI
  • Publication number: 20120020871
    Abstract: The invention relates to a method of manufacturing a perchlorate including an electrolysis process (S1) in which, using an electrolysis tank (2) in which an anode section (4A) provided with an anode (4) and a cathode section (5A) provided a cathode (5) are divided by a cation exchange membrane (6), an aqueous solution of sodium chlorate is electrolytically oxidized in the anode section, a neutralization reaction process (S2) in which a substance that becomes alkaline when dissolved in water is added to the aqueous solution of perchloric acid in the anode section, which has been generated by the electrolytic oxidation, so as to synthesize a perchlorate by a neutralization reaction, and a crystallization method in which the perchlorate synthesized by the neutralization reaction process is formed into crystals, in which the crystallization method includes a crystallization method composed of three processes of an evaporation and crystallization process (S3) or an evaporation and concentration process (S21), a co
    Type: Application
    Filed: March 26, 2010
    Publication date: January 26, 2012
    Inventors: Junichi Okuyama, Kumiko Yoshihisa, Yasunori Hamano, Takahiro Matsuo, Nobuhiko Kubota, Kazuo Uematsu, Muneo Ayabe
  • Publication number: 20120018890
    Abstract: A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
    Type: Application
    Filed: April 22, 2010
    Publication date: January 26, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Taichi Nakamura, Akio Furusawa, Shigeaki Sakatani, Hidetoshi Kitaura, Takahiro Matsuo
  • Publication number: 20110198209
    Abstract: A method for manufacturing ozone ice that is improved for its storage stability is provided. In the method, ice 11 including oxygen gas g2 as gas bubbles b is produced and the produced ice 11 is irradiated with ultraviolet radiation, then the oxygen gas g2 in the ice 11 is ozonized to manufacture ozone ice 1.
    Type: Application
    Filed: October 23, 2009
    Publication date: August 18, 2011
    Applicant: IHI Corporation
    Inventors: Junichi Okuyama, Yasunori Hamano, Takahiro Matsuo, Yuka Yoshida, Hajime Kuwabara, Nobuhiko Kubota, Kazuo Uematsu, Kouichiro Wazumi
  • Publication number: 20110175224
    Abstract: A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
    Type: Application
    Filed: January 17, 2011
    Publication date: July 21, 2011
    Applicant: Panasonic Corporation
    Inventors: Taichi NAKAMURA, Akio Furusawa, Shigeaki Sakatani, Hidetoshi Kitaura, Takahiro Matsuo