Patents by Inventor Takahiro MIYAKURA

Takahiro MIYAKURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200185237
    Abstract: There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.
    Type: Application
    Filed: February 13, 2020
    Publication date: June 11, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kensuke HAGA, Atsushi MORIYA, Naoharu NAKAISO, Takahiro MIYAKURA
  • Patent number: 10529560
    Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: January 7, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Takahiro Miyakura, Atsushi Moriya, Naoharu Nakaiso, Kensuke Haga
  • Publication number: 20190206679
    Abstract: There is provided a technique that includes: (a) forming a silicon germanium film in an amorphous state so as to embed an inside of a recess formed on a surface of a substrate, by supplying a first silicon-containing gas and a germanium-containing gas to the substrate at a first temperature; (b) raising a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature; and (c) forming a silicon film on the silicon germanium film by supplying a second silicon-containing gas to the substrate at the second temperature, wherein in (c), the silicon germanium film as a base of the silicon film is crystallized while the silicon film is formed.
    Type: Application
    Filed: December 27, 2018
    Publication date: July 4, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kiyohiko MAEDA, Masato TERASAKI, Yasuhiro MEGAWA, Takahiro MIYAKURA, Akito HIRANO, Takashi NAKAGAWA
  • Patent number: 10262872
    Abstract: There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: April 16, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takahiro Miyakura, Atsushi Moriya, Naoharu Nakaiso, Kensuke Haga
  • Publication number: 20180277364
    Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.
    Type: Application
    Filed: March 20, 2018
    Publication date: September 27, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takahiro MIYAKURA, Atsushi MORIYA, Naoharu NAKAISO, Kensuke HAGA
  • Publication number: 20180040475
    Abstract: There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.
    Type: Application
    Filed: August 1, 2017
    Publication date: February 8, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takahiro MIYAKURA, Atsushi MORIYA, Naoharu NAKAISO, Kensuke HAGA