Patents by Inventor Takahiro Muroshima
Takahiro Muroshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10785430Abstract: A solid-state imaging device includes: a pixel including a photoelectric converter that generates a charge and a charge accumulator that converts the charge into a voltage; a controller that causes the pixel to perform exposure in a first exposure mode and convert the charge into the voltage with a first gain to output a first pixel signal, and causes the pixel to perform exposure in a second exposure mode and convert the charge into the voltage with a second gain to output a second pixel signal, the second exposure mode being shorter in exposure time than the first exposure mode, and the second gain being lower than the first gain; and a signal processor that synthesizes the second pixel signal after amplification and the first pixel signal.Type: GrantFiled: August 9, 2018Date of Patent: September 22, 2020Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.Inventors: Makoto Ikuma, Takahiro Muroshima, Takayasu Kito, Hiroyuki Amikawa, Tetsuya Abe
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Patent number: 10742906Abstract: A solid-state imaging device includes: a pixel array unit in which a plurality of pixels are arranged in rows and columns; a plurality of column signal lines which are provided in one-to-one correspondence with pixel columns; a column processor including a plurality of column AD circuits provided in one-to-one correspondence with the plurality of column signal lines; a power supply variation detector which is connected to a power supply wire through which a power supply voltage is transmitted to each of the pixels, and which detects, in correspondence with pixel rows, power supply variation components attributed to variations in the power supply voltage; and a power supply variation corrector which corrects, for each of the pixel rows, a pixel signal detected by the column processor, using the power supply variation components detected by the power supply variation detector.Type: GrantFiled: August 9, 2018Date of Patent: August 11, 2020Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.Inventors: Makoto Ikuma, Takahiro Muroshima, Takayasu Kito, Hiroyuki Amikawa, Tetsuya Abe
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Publication number: 20180376083Abstract: A solid-state imaging device includes: a pixel including a photoelectric converter that generates a charge and a charge accumulator that converts the charge into a voltage; a controller that causes the pixel to perform exposure in a first exposure mode and convert the charge into the voltage with a first gain to output a first pixel signal, and causes the pixel to perform exposure in a second exposure mode and convert the charge into the voltage with a second gain to output a second pixel signal, the second exposure mode being shorter in exposure time than the first exposure mode, and the second gain being lower than the first gain; and a signal processor that synthesizes the second pixel signal after amplification and the first pixel signal.Type: ApplicationFiled: August 9, 2018Publication date: December 27, 2018Inventors: Makoto IKUMA, Takahiro MUROSHIMA, Takayasu KITO, Hiroyuki AMIKAWA, Tetsuya ABE
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Publication number: 20180376081Abstract: A solid-state imaging device includes: a pixel array unit in which a plurality of pixels are arranged in rows and columns; a plurality of column signal lines which are provided in one-to-one correspondence with pixel columns; a column processor including a plurality of column AD circuits provided in one-to-one correspondence with the plurality of column signal lines; a power supply variation detector which is connected to a power supply wire through which a power supply voltage is transmitted to each of the pixels, and which detects, in correspondence with pixel rows, power supply variation components attributed to variations in the power supply voltage; and a power supply variation corrector which corrects, for each of the pixel rows, a pixel signal detected by the column processor, using the power supply variation components detected by the power supply variation detector.Type: ApplicationFiled: August 9, 2018Publication date: December 27, 2018Inventors: Makoto IKUMA, Takahiro MUROSHIMA, Takayasu KITO, Hiroyuki AMIKAWA, Tetsuya ABE
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Patent number: 9881961Abstract: A solid-state imaging device according to an aspect of the present invention includes: an imaging area including a plurality of pixels arranged in rows and columns, each of the plurality of pixels converting incident light into a pixel signal; a column signal line provided for each of the columns, for reading out the pixel signal; and a current source connected to the column signal line, in which the current source includes: three transistors connected in series and provided between the column signal line and a GND line; and a transistor having a drain and a source each of which is connected to a different one of connection points connecting adjacent ones of the three transistors.Type: GrantFiled: August 17, 2015Date of Patent: January 30, 2018Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Hiroyuki Kobayashi, Takahiro Muroshima, Hiroshi Toya
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Publication number: 20150357369Abstract: A solid-state imaging device according to an aspect of the present invention includes: an imaging area including a plurality of pixels arranged in rows and columns, each of the plurality of pixels converting incident light into a pixel signal; a column signal line provided for each of the columns, for reading out the pixel signal; and a current source connected to the column signal line, in which the current source includes: three transistors connected in series and provided between the column signal line and a GND line; and a transistor having a drain and a source each of which is connected to a different one of connection points connecting adjacent ones of the three transistors.Type: ApplicationFiled: August 17, 2015Publication date: December 10, 2015Inventors: Hiroyuki KOBAYASHI, Takahiro MUROSHIMA, Hiroshi TOYA
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Patent number: 8710421Abstract: A solid-state imaging device according to the present invention includes a pixel cell having a photodiode, a charge detection unit, an amplification transistor, a transfer transistor which transfers a signal charge to the charge detection unit in accordance with a transfer control signal, and a reset transistor which resets the charge detection unit in accordance with a reset control signal; a signal processing circuit which receives a pixel reset potential of the charge detection unit, and a pixel signal potential corresponding to the signal charge transferred to the charge detection unit; a charge pump circuit which steps up or steps down a potential of at least one of the transfer control signal and the reset control signal in accordance with a driving clock signal; and a control logic circuit which causes the driving clock signal to be stopped during a pixel reading time period.Type: GrantFiled: May 18, 2012Date of Patent: April 29, 2014Assignee: Panasonic CorporationInventor: Takahiro Muroshima
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Publication number: 20120228476Abstract: A solid-state imaging device according to the present invention includes a pixel cell having a photodiode, a charge detection unit, an amplification transistor, a transfer transistor which transfers a signal charge to the charge detection unit in accordance with a transfer control signal, and a reset transistor which resets the charge detection unit in accordance with a reset control signal; a signal processing circuit which receives a pixel reset potential of the charge detection unit, and a pixel signal potential corresponding to the signal charge transferred to the charge detection unit; a charge pump circuit which steps up or steps down a potential of at least one of the transfer control signal and the reset control signal in accordance with a driving clock signal; and a control logic circuit which causes the driving clock signal to be stopped during a pixel reading time period.Type: ApplicationFiled: May 18, 2012Publication date: September 13, 2012Inventor: Takahiro Muroshima
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Patent number: 8068155Abstract: A solid-state image sensor includes: a plurality of pixels, each having a photodiode, a floating diffusion, a transfer transistor, a reset transistor, and an amplifying transistor; vertical signal lines 31 for receiving signals from the plurality of pixels; sampling capacitors 62; circuits 78 for comparing a voltage on a corresponding one of the vertical signal lines 31 with a reference voltage to determine whether the voltage on the corresponding vertical signal line 31 is higher or lower than the reference voltage; and clip circuits 79 for outputting a clip voltage Vclip to a corresponding one of the sampling capacitors 62 based on the output of a corresponding one of the circuits 78. A voltage on each vertical signal line in the state where the signal accumulated in a corresponding photodiode has been transferred to a corresponding floating diffusion, can be used as a comparison voltage of each column.Type: GrantFiled: June 28, 2007Date of Patent: November 29, 2011Assignee: Panasonic CorporationInventors: Takahiro Muroshima, Yasuyuki Endoh
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Patent number: 8045032Abstract: It is an object of the present invention to provide a solid-state imaging device capable of prevent image defects from appearing in an outputted image while suppressing increase in a layout area with a simple circuit structure and is an MOS solid-state imaging device. The MOS solid-state imaging device includes pixels which outputs signals corresponding to intensity of incident light, vertical signal lines which are respectively provided to columns of the pixels and each of which transmits the signals from said pixels in a column direction, and column amplifier circuits that amplify the signals from the pixels and are respectively connected to the vertical signal lines, and each of the column amplifier circuits includes a voltage clipping circuit includes a voltage clipping circuit which limits a maximum output voltage of said column amplifier circuit.Type: GrantFiled: July 21, 2008Date of Patent: October 25, 2011Assignee: Panasonic CorporationInventors: Takahiro Muroshima, Yasuyuki Endoh, Masashi Murakami
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Patent number: 7791660Abstract: A solid-state image sensing device includes: a pixel array in which pixels performing photoelectric conversion are arranged in rows and columns; and a column amplification section in which an image signal output from each pixel is amplified. The column amplification section includes amplifiers each of which is provided for each column, and the column amplification section is connected to a power supply voltage feed section and the ground. An impedance on the power supply side of the amplifier is greater than an impedance on the ground side.Type: GrantFiled: May 1, 2007Date of Patent: September 7, 2010Assignee: Panasonic CorporationInventors: Hiroshi Yoshida, Yoshiyuki Matsunaga, Takahiro Muroshima
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Patent number: 7728895Abstract: A solid-state image sensing device includes: a plurality of unit pixels 21 arranged in rows and columns each of which outputs a pixel signal according to incident light; and a plurality of floating diffusion portions 22 each of which receives the pixel signals. Each of the floating diffusion portions 22 is shared by two unit pixels 21 which are respectively arranged in adjacent rows and which are respectively adjacent columns.Type: GrantFiled: July 11, 2006Date of Patent: June 1, 2010Assignee: Panasonic CorporationInventors: Shouzi Tanaka, Ryouhei Miyagawa, Kazunari Koga, Takahiro Muroshima, Kenji Watanabe
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Publication number: 20100039543Abstract: A solid-state image sensor includes: a plurality of pixels, each having a photodiode, a floating diffusion, a transfer transistor, a reset transistor, and an amplifying transistor; vertical signal lines 31 for receiving signals from the plurality of pixels; sampling capacitors 62; circuits 78 for comparing a voltage on a corresponding one of the vertical signal lines 31 with a reference voltage to determine whether the voltage on the corresponding vertical signal line 31 is higher or lower than the reference voltage; and clip circuits 79 for outputting a clip voltage Vclip to a corresponding one of the sampling capacitors 62 based on the output of a corresponding one of the circuits 78. A voltage on each vertical signal line in the state where the signal accumulated in a corresponding photodiode has been transferred to a corresponding floating diffusion, can be used as a comparison voltage of each column.Type: ApplicationFiled: June 28, 2007Publication date: February 18, 2010Inventors: Takahiro Muroshima, Yasuyuki Endoh
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Publication number: 20090033782Abstract: It is an object of the present invention to provide a solid-state imaging device capable of prevent image defects from appearing in an outputted image while suppressing increase in a layout area with a simple circuit structure and is an MOS solid-state imaging device. The MOS solid-state imaging device includes pixels which outputs signals corresponding to intensity of incident light, vertical signal lines which are respectively provided to columns of the pixels and each of which transmits the signals from said pixels in a column direction, and column amplifier circuits that amplify the signals from the pixels and are respectively connected to the vertical signal lines, and each of the column amplifier circuits includes a voltage clipping circuit includes a voltage clipping circuit which limits a maximum output voltage of said column amplifier circuit.Type: ApplicationFiled: July 21, 2008Publication date: February 5, 2009Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Takahiro Muroshima, Yasuyuki Endoh, Masashi Murakami
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Publication number: 20090009643Abstract: A MOS type solid-state image pickup device includes a pixel unit which includes image pickup elements arranged two-dimensionally; a readout shift register; an electronic shutter shift register; a signal processing unit which extracts a pixel signal from the selected pixel; a horizontal shift register which outputs a column selection signal; and an amplifier circuit which amplifies the extracted pixel output signal. Each of the shift registers has a function of generating a dummy pulse during a blanking period. When the blanking period occurs after the completion of scanning up to the last line, a selection signal is outputted alternately to the last line and the second-from-the-last line of the shift register.Type: ApplicationFiled: February 16, 2006Publication date: January 8, 2009Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Takahiro Muroshima, Masashi Murakami
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Publication number: 20080273105Abstract: A solid-state image sensing device includes: a plurality of unit pixels 21 arranged in rows and columns each of which outputs a pixel signal according to incident light; and a plurality of floating diffusion portions 22 each of which receives the pixel signals. Each of the floating diffusion portions 22 is shared by two unit pixels 21 which are respectively arranged in adjacent rows and which are respectively adjacent columns.Type: ApplicationFiled: July 11, 2006Publication date: November 6, 2008Inventors: Shouzi Tanaka, Ryouhei Miyagawa, Kazunari Koga, Takahiro Muroshima, Kenji Watanabe
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Publication number: 20070247535Abstract: A solid-state image sensing device includes: a pixel array in which pixels performing photoelectric conversion are arranged in rows and columns; and a column amplification section in which an image signal output from each pixel is amplified. The column amplification section includes amplifiers each of which is provided for each column, and the column amplification section is connected to a power supply voltage feed section and the ground. An impedance on the power supply side of the amplifier is greater than an impedance on the ground side.Type: ApplicationFiled: May 1, 2007Publication date: October 25, 2007Inventors: Hiroshi Yoshida, Yoshiyuki Matsunaga, Takahiro Muroshima