Abstract: The present invention provides a solder material containing Sn or a Sn-containing alloy and 40 to 320 ppm by mass of A, the solder material including an As-enriched layer.

Abstract: The Cu core ball contains a Cu ball and a solder layer for covering a surface of the Cu ball. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 or more to 1.0 ppm by mass or lower, P in an amount of 0 or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% or higher and 99.9995% by mass or lower, and sphericity which is 0.95 or higher. The solder layer includes Ag in an amount of more than 0 to 4.0% by mass or less, Cu in an amount of more than 0 to 3.0% by mass or less, and remainder of Sn.

Abstract: The present invention accurately distinguishes a soldering material less likely to oxidize. A Cu core ball has a Cu ball having a predetermined size, and a solder layer coating the Cu ball. The Cu ball provides a space between a semiconductor package and a printed circuit board. The Cu core ball has the soldering material having lightness greater than or equal to 62.5 in L*a*b* color space subsequent to a heating storage test performed for 72 hours in a temperature-controlled bath at 150° C. with a temperature of 25° C. and 40% humidity, and the soldering material, prior to the heating storage test, having lightness greater than or equal to 65 in the L*a*b* color space and yellowness less than or equal to 7.0 in the L*a*b* color space.

Abstract: The present invention provides a solder material containing Sn or a Sn-containing alloy and 40 to 320 ppm by mass of A, the solder material including an As-enriched layer.

Abstract: Provided are a Cu column, a Cu core column, a solder joint, and a through-silicon via, which have the low Vickers hardness and the small arithmetic mean roughness. For the Cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 ?m, and its Vickers hardness is equal to or higher than 20 HV and equal to or less than 60 HV. Since the Cu column 1 is not melted at a melting temperature in the soldering and a definite stand-off height (a space between the substrates) can be maintained, it is preferably applied to the three dimensional mounting or the pitch narrowing mounting.

Abstract: Provided is a solder material having oxidation resistance at the time of melting solder or after melting it, as well as managing a thickness of oxide film at a fixed value or less before melting the solder. A Cu core ball 1A is provided with a Cu ball 2A for keeping a space between a semiconductor package and a printed circuit board and a solder layer 3A that covers the Cu ball 2A. The solder layer 3A is composed of Sn or a solder alloy whose main component is Sn. For the Cu core ball 1A, lightness is equal to or more than 65 in the L*a*b* color space and yellowness is equal to or less than 7.0 in the L*a*b* color space, and more preferably, the lightness is equal to or more than 70 and the yellowness thereof is equal to or less than 5.1.

Abstract: Provided herein is a solder material that includes a spherical core that provides space between a joint object and another object to be joined to the joint object and a solder coated layer that has a melting point at which a core layer of the core is not melted. The solder coated layer includes Sn as a main ingredient and 0 to 2 mass % of Ag, and coats the core. The solder coated layer has an average grain diameter of crystal grains of 3 ?m or less, and the solder material has a spherical diameter of 1 to 230 ?m and a sphericity of 0.95 or more.

Abstract: The Cu core ball contains a Cu ball and one or more metal layer for covering a surface of the Cu ball, each layer including one or more element selected from Ni, Co, Fe and Pd. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 ppm by mass or more to 1.0 ppm by mass or lower, P in an amount of 0 ppm by mass or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% by mass or higher and 99.9995% or lower, sphericity which is 0.95 or higher and a diameter of 1 ?m or more to 1000 ?m or lower.

Abstract: Provided is a flux containing not less than 11.0 degrees and not more than 17.0 of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature. The flux also contains more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux is applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth.

Abstract: A solder material capable of suppressing the occurrence of electromigration is provided. The solder material is core ball 1A which comprises spherical core 2A composed of Cu or a Cu alloy, and solder layer 3A coating core 2A, and wherein solder layer 3A has: a Cu content of 0.1 mass % or more and 3.0 mass % or less, a Bi content of 0.5 mass % or more and 5.0 mass % or less, a Ag content of 0 mass % or more and 4.5 mass % or less, and a Ni content of 0 mass % or more and 0.1 mass % or less, with Sn being the balance.

Abstract: A Cu core ball contains a Cu ball and at least one metal layer for covering a surface of the Cu ball. The metal layer is made of at least one element selected from the group of Ni, Co, Fe and Pd. The Cu ball contains at least one element selected from a group of Fe, Ag and Ni in a total amount of 5.0 ppm by mass or more to 50.0 ppm by mass or lower, S in an amount of 0 ppm by mass or more to 1.0 ppm by mass or lower, P in an amount of 0 ppm by mass or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% by mass or higher to 99.9995% by mass or lower, and sphericity which is 0.95 or higher.

Abstract: The Cu core ball contains a Cu ball and a solder layer for covering a surface of the Cu ball. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 or more to 1.0 ppm by mass or lower, P in an amount of 0 or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% or higher and 99.9995% by mass or lower, and sphericity which is 0.95 or higher. The solder layer includes Ag in an amount of more than 0 to 4.0% by mass or less, Cu in an amount of more than 0 to 3.0% by mass or less, and remainder of Sn.

Abstract: The Cu core ball contains a Cu ball and one or more metal layer for covering a surface of the Cu ball, each layer including one or more element selected from Ni, Co, Fe and Pd. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 ppm by mass or more to 1.0 ppm by mass or lower, P in an amount of 0 ppm by mass or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% by mass or higher and 99.9995% or lower, sphericity which is 0.95 or higher and a diameter of 1 ?m or more to 1000 ?m or lower.

Abstract: A core material including a core and a solder plating layer of a (Sn—Bi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer.

Abstract: A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 ?m.

Abstract: Provided are a Cu core ball and a cu core column, which achieve dropping strength and strength against heat cycle. The Cu core ball (1) contains a Cu ball (2) made of Cu or a Cu alloy and a solder layer (3) which is made of a solder alloy composed of Sn and Cu and covers the Cu ball (2). The solder layer (3) contains not less than 0.1% through not more than 3.0% of Cu and the remainder is composed of Sn and impurities.

Abstract: Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material including Sn content of 100%. In the covering layer, a SnO film is formed outside the solder layer, and a SnO2 film is formed outside the SnO film. A thickness of the covering layer is preferably more than 0 nm and equal to or less than 4.5 nm. Additionally, a yellow chromaticity of the solder ball is preferably equal to or less than 5.7.

Abstract: Produced is a metal ball which suppresses an emitted ? dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Abstract: A Cu core ball is provided that prevents any soft errors and decreases any connection failure. The Cu core ball includes a solder plating film formed on the surface of a Cu ball that is a Sn solder plating film or is made of a lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U of 5 ppb or less and Th of 5 ppb or less. The Cu ball has a purity of not less than 99.9% Cu and not more than 99.995% Cu. Pb and/or Bi contents therein are at a total of 1 ppm or more. The sphericity thereof is 0.95 or more. The obtained Cu core ball has an ? dose of 0.0200 cph/cm2 or less.

Abstract: Provided is a flux containing not less than 11.0 degrees and not more than 17.0 of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature. The flux also contains more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux is applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth.