Abstract: It is a problem to provide a resist underlayer film forming composition containing a fullerene derivative, which is easily applied on a substrate and from which a resist underlayer film excellent in dry etching properties can be obtained. The problem is solved by for example a resist underlayer film forming composition comprising: a fullerene derivative represented by Formula (3): (where, R4 represents one group selected from a group consisting of a hydrogen atom, an alkyl group which optionally has a substituent, an aryl group which optionally has a substituent and a heterocyclic group which optionally has a substituent; and R5 represents an alkyl group which optionally has a substituent or an aryl group which optionally has a substituent); and an organic solvent.

Abstract: A production method of a solid-state imaging device in which microlenses are arranged adjacent to each other on a substrate, includes: a first process of forming first microlenses on a surface of the substrate leaving space therebetween for providing second microlenses; and a second process of applying an overcoating material onto the surface of the substrate on which the first microlenses are formed, drying the overcoating material, exposing the overcoating material to light using a gray scale mask, and developing the exposed overcoating material, so as to form second microlenses in the space between the first microlenses adjacent to each other.

Abstract: An image processing apparatus includes a depth control signal generation unit generating a depth control signal controlling emphasis of the feel of each region of an input image based on the depth position of a subject in each region of the input image; a face skin region control signal generation unit generating a face skin region control signal controlling emphasis of the feel of each region in the input image based on the human face skin region in the input image; a person region control signal generation unit generating a person region control signal controlling emphasis of the feel of each region in the input image based on the region of the person in the input image; and a control signal synthesis unit synthesizing the depth control signal, the face skin region control signal, and the person region control signal to generate a control signal.

Abstract: [Object] To provide a coating-type underlayer coating forming composition that is applied for multi-ply coating process by thin film resist in order to prevent collapse of resist pattern after development with miniaturization of resist pattern, and that shows a sufficient etching resistance against a semiconductor substrate to be processed on processing of the substrate by having a low dry etching rate compared with the photoresist and substrate. [Means for solving problems] A coating-type underlayer coating forming composition that is used for lithography process by multi-ply coating, comprising a polymer containing a vinylnaphthalene based structural unit and an acrylic acid based structural unit containing an aromatic hydroxy group or a hydroxy-containing ester. A coating-type underlayer coating forming composition further comprising an acrylic acid based structural unit containing an aliphatic cyclic compound-containing ester or an aromatic compound-containing ester.

Abstract: A motor driving circuit includes an inverter circuit which supplies a driving current to a coil of a single phase brushless DC motor, a position detection sensor which detects a magnetic pole position of a magnet rotor of the motor and outputs a position detection signal, and a controller which controls the inverter circuit based on the position detection signal and a speed instruction signal for instructing a rotating speed of the motor. At a time of startup of the motor, the controller makes a pulse width of a PWM signal for controlling the inverter circuit constant in a first time period which starts after the position detection signal zero-crosses and lasts until the position detection signal zero-crosses next time, and narrows the pulse width of the PWM signal as time elapses in a second time period immediately after the first time period.

Abstract: There is provided a photosensitive resin composition for a microlens. A photosensitive resin composition for a microlens, comprising a component (A), a component (B) and a component (C), wherein the component (A) is a polymer having a maleimide structural unit of Formula (1), the component (B) is a cross-linking agent, and the component (C) is a photosensitizing agent.

Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.

Abstract: An extension piece portion is provided at a lower end portion of a screen plate so as to extend from the lower end portion, beyond a gas-passing through hole, to an oil pocket portion. An oil guide portion is provided at respective gas-hitting-side face portions of the screen plate and the extension piece portion so as to guide oil trapped at the above-described face portions into the oil pocket portion. Accordingly, it can be prevented that part of the oil in the middle of dropping down into the oil pocket portion from the screen plate is carried away by the gas flow passing through the gas-passing through hole, so that the efficiency of oil trap can be improved.

Abstract: There is provided a single-phase AC synchronized motor that does not need smooth of rectifier waves but stably performs shift from a starting operation to a synchronized operation. In the motor, based on detected signals of a position sensor, rectified current is reciprocally flowed to each direction of a single-phase coil which starts the motor. The motor includes a start-up operation circuit with a sensor starting period that increases a rotational speed until reaching to a first predetermined rotational speed; and a control device that controls operation of the motor as that shift to synchronized operation is performed when a rotational speed of a permanent magnetic rotor is reached to a second predetermined rotational speed nearby a synchronized rotational speed but not exceeding the synchronized rotational speed, and when the rise and fall of detected signals of the position sensor and the zero-cross point of AC current are approximately correspondent to each other.

Abstract: There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.

Abstract: An image processing apparatus includes: a data processing section which processes input image data and obtains output image data; a face detecting section which detects a face image on the basis of the input image data and obtains information about a face image region in which the face image exists; and a processing controller which controls the process of the data processing section on the basis of the information about the face image region obtained in the face detecting section.

Abstract: There is provided a positive resist composition excellent in transparency, heat resistance, and refractive index particularly for forming a microlens and for forming a planarization film; and a microlens and a planarization film formed from the positive resist composition. A positive resist composition comprising a component (A): an alkali-soluble polymer comprising a unit structure having a biphenyl structure; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; and a component (C): a solvent. The positive resist composition wherein the alkali-soluble polymer as the component (A) is a polymer comprising a unit structure of Formula (1): where when the total number of unit structures constituting the polymer (A) is assumed to be 1.0, the ratio n1 of the unit structure of Formula (1) constituting the polymer (A) satisfies 0.3?n1?1.0.

Abstract: A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.

Abstract: To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative. A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1): wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.

Abstract: There is provided a resist underlayer coating forming composition used in processes for manufacturing a mask blank and a mask, and a mask blank and a mask manufactured from the composition. The resist underlayer coating forming composition comprises a polymer compound having a halogen atom-containing repeating structural unit and a solvent. In a mask blank including a thin film for forming transfer pattern and a chemically-amplified type resist coating on a substrate in that order, the composition is used for forming a resist underlayer coating between the thin film for forming transfer pattern and the resist coating. The polymer compound is preferably a compound containing a halogen atom in an amount of at least 10 mass %.

Abstract: A material for a microlens having heat resistance, high resolution and high light-extraction efficiency is provided. A positive resist composition comprises an alkali-soluble polymer (A) containing a unit structure having an aromatic fused ring or a derivative thereof, and a compound (B) having an organic group which undergoes photodecomposition to yield an alkali-soluble group. The positive resist composition has coating film properties of a refractive index at a wavelength of 633 nm of 1.6 or more and a transmittance at wavelengths of 400 to 730 nm of 80% or more. A pattern forming method comprises applying the positive resist composition, drying the composition, exposing the composition to light, and developing the composition.

Abstract: There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.

Abstract: It is a problem to provide a resist underlayer film forming composition containing a fullerene derivative, which is easily applied on a substrate and from which a resist underlayer film excellent in dry etching properties can be obtained. The problem is solved by for example a resist underlayer film forming composition comprising: a fullerene derivative represented by Formula (3): (where, R4 represents one group selected from a group consisting of a hydrogen atom, an all group which optionally has a substituent, an aryl group which optionally has a substituent and a heterocyclic group which optionally has a substituent; and R5 represents an alkyl group which optionally has a substituent or an aryl group which optionally has a substituent); and an organic solvent.

Abstract: There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.

Abstract: [Object] To provide a coating-type underlayer coating forming composition that is applied for multi-ply coating process by thin film resist in order to prevent collapse of resist pattern after development with miniaturization of resist pattern, and that shows a sufficient etching resistance against a semiconductor substrate to be processed on processing of the substrate by having a low dry etching rate compared with the photoresist and substrate. [Means for solving problems] A coating-type underlayer coating forming composition that is used for lithography process by multiply coating, comprising a polymer containing a vinylnaphthalene based structural unit and an acrylic acid based structural unit containing an aromatic hydroxy group or a hydroxy-containing ester. A coating-type underlayer coating forming composition further comprising an acrylic acid based structural unit containing an aliphatic cyclic compound-containing ester or an aromatic compound-containing ester.