Patents by Inventor Takahiro Sato

Takahiro Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180294828
    Abstract: A radio frequency signal can be received in an intermediate frequency mode suitable for radio wave reception conditions. An oscillator has a variable oscillation frequency. A quadrature demodulator includes a frequency mixer and generates an intermediate frequency signal having an intermediate frequency lower than the frequency of the radio frequency signal. An ADC receives the intermediate frequency signal passed through an analog filter and converts the received intermediate frequency signal to a digital signal. A channel selection signal processing section generates a demodulated signal from the intermediate frequency signal converted to the digital signal. A mode control section switches the operating mode of the quadrature demodulator between a zero intermediate frequency mode and a low intermediate frequency mode in accordance with the radio wave reception conditions.
    Type: Application
    Filed: February 6, 2018
    Publication date: October 11, 2018
    Inventors: Naohiro MATSUI, Hiroyuki Okada, Kichung Kim, Tomoaki Hirota, Takahiro Sato, Osamu Inagawa
  • Patent number: 10090220
    Abstract: A semiconductor device includes a substrate; a semiconductor layer; a first protective film; a first adhesive layer disposed on the first protective film; an electrode pad disposed on the first protective film; a second protective film disposed to cover and be in contact with the electrode pad and the first adhesive layer; and a first opening formed in part of the second protective film such that the upper surface of the electrode pad is exposed, wherein in a plan view, the first adhesive layer includes a first projection projecting from the electrode pad radially in a direction of the periphery of the electrode pad and continuously surrounding the periphery of the electrode pad; and the second protective film is continuously to cover and contact part of the upper and side surfaces of the electrode pad, the upper and side surfaces of first projection, and the first protective film.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: October 2, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Ayanori Ikoshi, Masahiro Hikita, Keiichi Matsunaga, Takahiro Sato, Manabu Yanagihara
  • Publication number: 20180268179
    Abstract: An RFID data management device includes an RFID data acquisition unit acquiring RFID management data including identification information of an RFID, a relevant data acquisition unit acquiring RFID relevant data including a use start date of the RFID, and a remaining time calculation unit calculating a remaining data guarantee time of the RFID using a data guarantee period dependent on the identification information and the environmental temperature of the RFID, and the environmental temperature. The remaining time calculation unit calculates the remaining time using an environmental temperature in a first period from a manufacturing date of the RFID to a use start timing, a data guarantee period according to the environmental temperature in the first period, an environmental temperature in a second period from the use start timing to a timing of confirmation, and a data guarantee period according to the environmental temperature in the second period.
    Type: Application
    Filed: December 15, 2017
    Publication date: September 20, 2018
    Applicant: OMRON Corporation
    Inventors: Takahiro SATO, Koji TAKATORI, Hidekatsu NOGAMI, Ryo IKEUCHI, Takema SATO
  • Patent number: 10061667
    Abstract: In a storage system, a processor divides a plurality of sections that constitute a physical storage area in a storage device into primary sections and secondary sections, associates one primary section and one secondary section with each other and then manages the associated primary section and secondary section, and writes data having been written to a primary section also to a secondary section corresponding to the primary section.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: August 28, 2018
    Assignee: HITACHI, LTD.
    Inventors: Takahiro Sato, Yuko Matsui, Koutarou Muramatsu
  • Patent number: 10043608
    Abstract: A laminated coil component includes an element assembly formed by laminating a plurality of insulation layers and a coil unit formed inside the element assembly by a plurality of coil conductors. The element assembly includes a coil unit arrangement layer which has the coil unit arranged therein, and at least a pair of shape retention layers which is provided to have the coil unit arrangement layer interposed therebetween to retain a shape of the coil unit arrangement layer. The shape retention layer is made from glass-ceramic containing SrO, and a softening point of the coil unit arrangement layer is lower than a softening point or a melting point of the shape retention layer.
    Type: Grant
    Filed: August 20, 2012
    Date of Patent: August 7, 2018
    Assignee: TDK CORPORATION
    Inventors: Takahiro Sato, Yuya Ishima, Shusaku Umemoto, Takashi Suzuki, Satoru Okamoto, Yoshikazu Sakaguchi
  • Patent number: 10003023
    Abstract: To provide a highly flexible display device excellent in mass-productivity. A display device includes a flexible substrate, an adhesive layer over the substrate, a resin layer over the adhesive layer, an inorganic insulating layer over the resin layer, a transistor over the inorganic insulating layer, and a display element electrically connected to the transistor. The transistor includes an oxide semiconductor in a channel formation region. The resin layer includes sulfur.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: June 19, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takahiro Sato, Shunsuke Koshioka, Rihito Wada, Junko Suzawa
  • Patent number: 9984799
    Abstract: A ferrite composition comprises a main component and a sub component. The main component is comprised of 25.0 to 49.8 mol % iron oxide in terms of Fe2O3, 5.0 to 14.0 mol % copper oxide in terms of CuO, 0 to 40.0 mol % zinc oxide in terms of ZnO, and a remaining part of nickel oxide. The sub component includes 0.2 to 5.0 wt % silicon oxide in terms of SiO2, 0.10 to 3.00 wt % bismuth oxide in terms of Bi2O3, and 0.10 to 3.00 wt % cobalt oxide in terms of Co3O4, with respect to the main component.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: May 29, 2018
    Assignee: TDK CORPORATION
    Inventors: Ryuichi Wada, Kouichi Kakuda, Hiroki Choto, Yukari Akita, Yukio Takahashi, Masahiro Endo, Takashi Suzuki, Takahiro Sato, Akinori Ohi
  • Patent number: 9985056
    Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. A miniaturized transistor including an oxide semiconductor is provided. A method for manufacturing a semiconductor device including an oxide semiconductor film includes the following steps: forming an oxide semiconductor film; forming an insulating film over the oxide semiconductor film; forming a conductive film over the insulating film; forming a first protective film over the conductive film; and forming a second protective film over the first protective film. The first protective film, the conductive film, and the insulating film are processed using the second protective film as a mask. After the second protective film is removed, the conductive film and the insulating film are processed using the first protective film as a mask to have a smaller area than that of the second protective film.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: May 29, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takahiro Sato, Masami Jintyou
  • Publication number: 20180057408
    Abstract: A ferrite composition includes a main component and an accessory component. The main component includes 43.0 to 51.0 mol % of iron oxide in terms of Fe2O3, 5.0 to 15.0 mol % of copper oxide in terms of CuO, 1.0 to 24.9 mol % of zinc oxide in terms of ZnO, and a remaining part of nickel oxide. The accessory component includes 0.2 to 3.0 pts. wt. of silicon compound in terms of SiO2, 3.0 to 8.0 pts. wt. of cobalt compound in terms of Co3O4 (excluding 3.0 pts. wt.), and 0.2 to 8.0 pts. wt. of bismuth compound in terms of Bi2O3 with respect to 100 pts. wt. of the main component.
    Type: Application
    Filed: August 16, 2017
    Publication date: March 1, 2018
    Applicant: TDK CORPORATION
    Inventors: Kouichi KAKUDA, Ryuichi WADA, Yukio TAKAHASHI, Hiroyuki TANOUE, Tatsuro SUZUKI, Takahiro SATO, Takashi SUZUKI
  • Publication number: 20180053856
    Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.
    Type: Application
    Filed: October 17, 2017
    Publication date: February 22, 2018
    Inventors: Takahiro SATO, Yasutaka NAKAZAWA, Takayuki CHO, Shunsuke KOSHIOKA, Hajime TOKUNAGA, Masami JINTYOU
  • Patent number: 9899423
    Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: February 20, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroyuki Miyake, Takahiro Sato, Masami Jintyou
  • Patent number: 9882014
    Abstract: The semiconductor device includes an oxide semiconductor; a source electrode and a drain electrode in contact with the oxide semiconductor; a gate insulating film over the oxide semiconductor, the source electrode, and the drain electrode; and a gate electrode overlapping the oxide semiconductor, part of the source electrode, and part of the drain electrode with the gate insulating film positioned therebetween. The source electrode and the drain electrode each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti), and the thickness of a region of the oxide semiconductor over which neither the source electrode nor the drain electrode is provided is smaller than the thicknesses of regions of the oxide semiconductor over which the source electrode and the drain electrode are provided.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: January 30, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasutaka Nakazawa, Takayuki Cho, Shunsuke Koshioka, Takahiro Sato, Naoya Sakamoto, Shunpei Yamazaki
  • Publication number: 20180009988
    Abstract: The present invention relates to [1] a process for producing pigment-containing modified polymer particles, including the step of reacting pigment-containing polymer particles (A) containing a functional group and a compound (B) containing a reactive group capable of reacting with the functional group of the polymer particles (A) in a medium under such a condition that a ratio [(B)/(A)] of total moles of the reactive group of the compound (B) to total moles of the functional group of the polymer particles (A) is from 0.10 to 0.62; [2] a pigment water dispersion including an aqueous medium and the modified polymer particles produced by the aforementioned process which are dispersed in the aqueous medium; and [3] an ink including the aforementioned pigment water dispersion and an organic solvent.
    Type: Application
    Filed: December 22, 2015
    Publication date: January 11, 2018
    Applicant: KAO CORPORATION
    Inventors: Takahiro SATO, Yasufumi UEDA
  • Publication number: 20170362358
    Abstract: The present invention provides a process for producing a fine organic pigment which is capable of efficiently atomizing a raw material organic pigment, and excellent in productivity of the fine organic pigment. The present invention relates to a process for producing a fine organic pigment which includes the step of kneading a mixture prepared by compounding a raw material organic pigment, a water-soluble inorganic salt, a water-soluble organic solvent and a resin, in which the resin is a copolymer produced by copolymerizing an aromatic ring-containing ethylenically unsaturated monomer (A), a carboxy group-containing ethylenically unsaturated monomer (B) and an ethylenically unsaturated monomer (C) containing a polyethyleneoxide chain having an average molar number of addition of ethyleneoxide of not less than 1 and not more than 50.
    Type: Application
    Filed: December 15, 2015
    Publication date: December 21, 2017
    Applicant: KAO CORPORATION
    Inventors: Yuki OZAKI, Yasufumi UEDA, Takahiro SATO
  • Patent number: 9827556
    Abstract: Disclosed is an exhaust gas purification catalyst carrier which includes a phosphate salt represented by formula: MPO4 (wherein M represents Y, La, or Al) or a zirconium phosphate represented by formula ZrP2O7; an exhaust gas purification catalyst containing a noble metal at least containing Rh and supported on the carrier; and an exhaust gas purification catalyst product having a catalyst support made of a ceramic or metallic material, and a layer of the exhaust gas purification catalyst, the layer being supported on the catalyst support.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: November 28, 2017
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yuki Nagao, Takahiro Sato, Yunosuke Nakahara, Masato Machida
  • Patent number: 9809872
    Abstract: A dilute copper alloy material includes, based on a total mass of the dilute copper alloy material, 2 to 12 mass ppm of sulfur, 2 to 30 mass ppm of oxygen, 4 to 55 mass ppm of titanium, and a balance of pure copper and inevitable impurity. A part of the sulfur and the titanium forms a compound or an aggregate of TiO, TiO2, TiS or Ti—O—S, and an other part of the sulfur and the titanium forms a solid solution. TiO, TiO2, TiS and Ti—O—S distributed in a crystal grain of the dilute copper alloy material are not more than 200 nm, not more than 1000 nm, not more than 200 nm and not more than 300 nm, respectively, in particle size thereof, and not less than 90% of particles distributed in a crystal grain of the dilute copper alloy material are 500 nm or less in particle size.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: November 7, 2017
    Assignee: HITACHI METALS, LTD.
    Inventors: Seigi Aoyama, Toru Sumi, Shuji Sakai, Takahiro Sato, Hidenori Abe
  • Patent number: 9812583
    Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: November 7, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Sato, Yasutaka Nakazawa, Takayuki Cho, Shunsuke Koshioka, Hajime Tokunaga, Masami Jintyou
  • Publication number: 20170301860
    Abstract: To provide a highly flexible display device excellent in mass-productivity. A display device includes a flexible substrate, an adhesive layer over the substrate, a resin layer over the adhesive layer, an inorganic insulating layer over the resin layer, a transistor over the inorganic insulating layer, and a display element electrically connected to the transistor. The transistor includes an oxide semiconductor in a channel formation region. The resin layer includes sulfur.
    Type: Application
    Filed: April 10, 2017
    Publication date: October 19, 2017
    Inventors: Shunpei YAMAZAKI, Takahiro SATO, Shunsuke KOSHIOKA, Rihito WADA, Junko SUZAWA
  • Patent number: 9783680
    Abstract: The present invention provides the following process for producing a fine organic pigment which is capable of producing the fine organic pigment that has a very small primary particle size and is excellent in filtering property even in a cleaning step, and a fine organic pigment produced by the process; a process for producing a dispersion using the fine organic pigment, and a dispersion produced by the process; and a process for producing an ink using the dispersion. The present invention relates to [1] a process for producing a fine organic pigment, including steps 1 and 2: step 1: kneading a mixture prepared by compounding a raw material organic pigment, a water-soluble inorganic salt, a water-soluble organic solvent and a compound represented by the following formula (1) with each other, the compound being compounded in an amount of not less than 0.8 part by mass and not more than 18.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: October 10, 2017
    Assignee: KAO CORPORATION
    Inventors: Hironobu Fukuroi, Takahiro Sato, Isao Tsuru, Yusuke Shimizu, Yasufumi Ueda
  • Publication number: 20170288631
    Abstract: In order to pass a signal having a wide pass bandwidth with respect to a center frequency of a pass band, a surface acoustic wave device includes a first surface acoustic wave element provided with a first pass band; and a second surface acoustic wave element having a second pass band in a high frequency band compared with the first pass band of the first surface acoustic wave element, in which the first surface acoustic wave element and the second surface acoustic wave element have a common input terminal and a common output terminal, and a frequency of a high frequency side of the first pass band of the first surface acoustic wave element is partially overlapped with a frequency of a low frequency side of the second pass band of the second surface acoustic wave element.
    Type: Application
    Filed: July 6, 2016
    Publication date: October 5, 2017
    Inventors: Kensei UEHARA, Takahiro SATO