Abstract: This windshield comprises: a first glass panel having a first surface and a second surface; a second glass panel having a third surface and a fourth surface; and an intermediate film that is disposed between the first glass panel and the second glass panel, and that joins the second surface of the first glass panel to the third surface of the second glass panel. The failure stress of at least one region of the glass panel which is the inner panel is configured so as to be less than the failure stress of another region.

Abstract: A windshield according to the present invention includes an outer glass plate, an inner glass plate that faces the outer glass plate, and an intermediate film disposed between the outer glass plate and the inner glass plate, and in at least a partial region of the outer glass plate and the inner glass plate, compressive principal stress on a surface on a vehicle exterior side of the outer glass plate is larger than compressive principal stress on a surface on a vehicle interior side of the inner glass plate.

Abstract: An operating ratio is improved in a vacuum processing apparatus to which a plurality of vacuum transfer chambers are connected through a vacuum transfer intermediate chamber. In a method of operating the vacuum processing apparatus having the plurality of vacuum transfer chambers connected through the vacuum transfer intermediate chamber and a plurality of vacuum processing vessels connected to the vacuum transfer chambers, respectively, the plurality of vacuum transfer chambers are made to communicate through the vacuum transfer intermediate chamber, a purge gas is supplied to the vacuum transfer chamber connected to a lock chamber in the plurality of vacuum transfer chambers, an inside of the transfer chamber of the vacuum transfer chamber which is far from the lock chamber is decompressed/exhausted, and pressures in all the transfer chambers of the plurality of vacuum transfer chambers are raised to be higher than the pressure in the vacuum processing vessel.

Abstract: A method for producing a glass plate according to the present invention includes: a conveying-in step of conveying a heated glass plate into a molding apparatus; a first molding step of molding the glass plate in a state where at least part of a peripheral edge portion of at least one of an upper face and a lower face of the glass plate is free from contact; a separating step of separating at least a region molded in the first molding step, of the glass plate, from any mold that the region was in contact with; a second molding step of molding a region including at least part of the peripheral edge portion of the glass plate; and a conveying-out step of conveying the glass plate subjected to the second molding step, out of the molding apparatus.

Abstract: A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

Abstract: A vacuum processing apparatus includes a row of containers of vacuum transfer chambers connected to each other behind a lock chamber, a wafer being transferred through depressurized inside of the row of the containers of the vacuum transfer containers, an intermediate chamber disposed between the containers of the vacuum transfer chambers, a plurality of processing units including processing containers respectively connected to left or right side walls of the containers of the vacuum transfer chambers and the wafer is processed therein, and a bypass chamber which constitutes a bypass path connecting the processing units, where only either the wafer which is being transferred from the lock chamber toward one of the processing units or the wafer which was processed in one of the processing units and is being transferred toward the lock chamber is transferred through the containers of the vacuum transfer chambers.

Abstract: A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

Abstract: A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

Abstract: An operating ratio is improved in a vacuum processing apparatus to which a plurality of vacuum transfer chambers are connected through a vacuum transfer intermediate chamber. In a method of operating the vacuum processing apparatus having the plurality of vacuum transfer chambers connected through the vacuum transfer intermediate chamber and a plurality of vacuum processing vessels connected to the vacuum transfer chambers, respectively, the plurality of vacuum transfer chambers are made to communicate through the vacuum transfer intermediate chamber, a purge gas is supplied to the vacuum transfer chamber connected to a lock chamber in the plurality of vacuum transfer chambers, an inside of the transfer chamber of the vacuum transfer chamber which is far from the lock chamber is decompressed/exhausted, and pressures in all the transfer chambers of the plurality of vacuum transfer chambers are raised to be higher than the pressure in the vacuum processing vessel.

Abstract: In a vacuum processing apparatus including a plurality of vacuum transfer vessels arranged back and forth at the back of a lock chamber, an intermediate chamber arranged between them and capable of accommodating wafers, and processing units connected to respective vacuum transfer vessels, a wafer processed in a pre-processing vessel out of the processing units connected to the respective vacuum transfer vessels is transferred to a post-processing vessel connected to the same vacuum transfer vessel and post-processing is performed.

Abstract: A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

Abstract: A bent glass sheet shaping method which is capable of reducing occurrence of visibility distortions and a bent glass sheet with reduced visibility distortions. A glass sheet is heated to a shapeable temperature, a cover material is mounted onto a press die such that a direction of waves in the cover material is diagonal to a direction of distortions in the glass sheet, and the heated glass sheet with the press die is pressed.

Abstract: A vacuum processing apparatus includes a row of containers of vacuum transfer chambers connected to each other behind a lock chamber, a wafer being transferred through depressurized inside of the row of the containers of the vacuum transfer containers, an intermediate chamber disposed between the containers of the vacuum transfer chambers, a plurality of processing units including processing containers respectively connected to left or right side walls of the containers of the vacuum transfer chambers and the wafer is processed therein, and a bypass chamber which constitutes a bypass path connecting the processing units, where only either the wafer which is being transferred from the lock chamber toward one of the processing units or the wafer which was processed in one of the processing units and is being transferred toward the lock chamber is transferred through the containers of the vacuum transfer chambers.

Abstract: A vacuum processing apparatus including a processing chamber for processing a sample to be processed, a cooling chamber for cooling the high-temperature sample processed in the processing chamber, and a vacuum transfer chamber for establishing a connection between the processing chamber and the cooling chamber, a vacuum transfer robot equipped inside the vacuum transfer chamber, wherein the cooling chamber includes a gas-exhausting unit for reducing pressure inside the cooling chamber, a gas-supplying unit for supplying a gas into the cooling chamber, a pressure-controlling unit for controlling the pressure inside the cooling chamber, a supporting unit for supporting the high-temperature sample, and a mounting stage for proximity-holding the sample supported by the supporting unit, the mounting stage having a temperature-adjusting unit for adjusting the temperature of surface of the mounting stage into a temperature which is capable of cooling the high-temperature sample, the supporting unit having an ascendi

Abstract: A vacuum processing apparatus having an atmospheric-pressure transport chamber for conveying samples, lock chambers that accommodate the samples conveyed in and have an ambient capable of being switched between an atmospheric ambient and a vacuum ambient, a vacuum transport chamber coupled to the lock chambers, and at least one vacuum chamber for processing the samples. The apparatus further includes cooling portions operable to cool the high-temperature samples processed by the vacuum chamber. Each cooling portion has: a sample stage over which the high-temperature samples are placed and which has a coolant channel; gas-blowing tubes disposed closer to the inlet/exit port and acting to blow gas toward the sample stage; and an exhaust port disposed on the opposite side of the sample stage with regard to the inlet/exit port and acting to discharge the gas blown from the gas-blowing tubes.

Abstract: A vacuum processing system including a cassette holder for setting up cassettes in which samples are stored, an air-transfer chamber for transferring the samples, lock chambers for storing the samples transferred from the air-transfer chamber, the lock chambers being capable of switching between air atmosphere and vacuum atmosphere in their inside, a vacuum transfer chamber connected to the lock chambers, vacuum containers for processing the samples transferred via the vacuum transfer chamber, a cooling chamber for cooling the samples down to a first temperature, the samples being processed in at least one of the vacuum containers, and a cooling unit for cooling the samples down to a second temperature, the samples being cooled in the cooling chamber. The cooling unit is deployed in the air transfer chamber, and has a cooling part for cooling the samples, being cooled in the cooling chamber, down to the second temperature.

Abstract: A vehicle glass (10) comprises an outer glass plate (31) adjacent to the exterior of the vehicle, an inner glass plate (32) adjacent to the interior of the vehicle, and an intermediate film (33) that joins these glass plates. The outer glass plate is a bent glass plate formed by printing a black ceramic layer (14) on a face of a glass plate (13) adjacent to the interior of the vehicle, covering the black ceramic layer with a printed silver layer (12), and bending using a press-bending device. When a reflection color tone is obtained by measuring a portion at which the printed silver layer is printed from a side of the layer on which the glass palate lies, the chromatic coordinate b* in the CIE 1976 color system defined in JIS Z 8729 does not exceed six.

Abstract: A ceramic paste is applied to a first glass sheet 11, and a ceramic paste is applied to a second glass sheet 13 with a lower solar absorptivity than that of the first glass sheet 11. In this case, the amount per unit area of the ceramic paste to be applied to the first glass sheet 11 is allowed to be smaller than that of the ceramic paste to be applied to the second glass sheet 13. Alternatively, a first ceramic paste and a second ceramic paste are allowed to have different compositions from each other. The first glass sheet 11 and the second glass sheet 13 are bent so that the surfaces onto which the ceramic pastes have been applied are shaped as concave surfaces. The applied ceramic paste is fired using the heating used for bending. Thus maskings 12 and 14 are formed. The first glass sheet 11 and the second glass sheet 13 are bonded to each other, with a resin interlayer film 15 being interposed therebetween.

Abstract: A bent glass sheet (1) with a light-shielding film for vehicles includes a glass sheet, and a light-shielding film formed in at least a part, i.e. a film-formed portion (11), of a peripheral portion of one surface of the glass sheet. The light-shielding film is composed of a band-shaped film (12) and a dot-patterned film (13). The band-shaped film is arranged in an outer part of the peripheral portion. The dot-patterned film composed of a plurality of dots (14) is arranged in an inner part with reference to the band-shaped film. The plurality of dots are positioned so that a distribution of the dot shielding ratios decreases from the edge of the band-shaped film toward a side of a glass surface (a non-film-formed portion (15)) on which the band-shaped film is not formed, where the dot shielding ratios are values of peaks of mountains formed of a distribution of the dot-width shielding ratios, or dot-diameter shielding ratios.

Abstract: A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.