Abstract: A monitoring system includes storage, and one or more processors. The storage stores at least one of first output data that is obtained from a learning model, or first statistical information that is obtained from the first output data. The processors calculate a degree of abnormality indicating a degree of change in statistical information of second output data with respect to the first statistical information, or a degree of change in the statistical information of the second output data with respect to second statistical information. The processors determine whether or not there is occurrence of an abnormality in the learning model, on the basis of the degree of abnormality. The processors output information indicating occurrence of the abnormality, in a case where occurrence of the abnormality is determined.

Abstract: According to one embodiment, an additional training apparatus includes processing circuitry. The processing circuitry stores, in a memory, a plurality of pieces of existing training data in which existing data is input data and a classification of defects according to the existing data is output data, and cluster data representing clusters to which the respective pieces of existing training data belong. The processing circuitry extracts a plurality of pieces of first existing training data from the pieces of existing training data in accordance with a size of each of the clusters. The processing circuitry acquires a plurality of pieces of new training data in which new data is input data and a classification of defects according to the new data is output data.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a body region of the first conductivity type, a source region of a second conductivity type, a drain region of the second conductivity type, a gate electrode, a drift region of the second conductivity type, an implanted oxide layer, and a semiconductor region of the first conductivity type. The semiconductor region is formed to extend in a direction along the top face of the semiconductor substrate. A first distance and a second distance are set so that an intensity of 0.35 MV/cm or less is observed in an electric field of a first region including the end portion of the drift region and in an electric field of a second region between the end of the semiconductor region and the drain region.

Abstract: According to one embodiment, a model update support system supports an update of a first model trained using a training data group. The training data group includes a plurality of labeled data and includes a plurality of labels respectively labeling the plurality of labeled data. The system includes a processor. The processor is configured to output first information or second information based on a classification certainty and a plurality of similarities. The classification certainty is calculated using the first model and indicates a sureness of a classification of first data. The plurality of similarities respectively indicates likenesses between the first data and the plurality of labeled data. The first information indicates that the training of the first model is insufficient. The second information indicates that one of the plurality of labels is inappropriate.

Abstract: An OOD data detection apparatus includes: an obtainment unit that obtains monitoring target data; an intermediate output calculation unit that calculates an intermediate output by applying a trained model to the monitoring target data; a projected-component calculation unit that calculates a projected component of the intermediate output to a parameter constituting the trained model; and a discrimination unit that discriminates as to whether the monitoring target data is OOD data based on the projected component.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a body region of the first conductivity type, a source region of a second conductivity type, a drain region of the second conductivity type, a gate electrode, a drift region of the second conductivity type, an implanted oxide layer, and a semiconductor region of the first conductivity type. The semiconductor region is formed to extend in a direction along the top face of the semiconductor substrate. A first distance and a second distance are set so that an intensity of 0.35 MV/cm or less is observed in an electric field of a first region including the end portion of the drift region and in an electric field of a second region between the end of the semiconductor region and the drain region.

Abstract: According to one embodiment, system includes a determination unit, a first storage, a second storage, a search unit and a display. The determination unit determines a feature quantity of the process-targeted manufacturing data. The first storage stores cause-unidentified manufacturing data. The second storage stores cause-identified manufacturing data. The search unit searches, based on the feature quantity of the process-targeted manufacturing data, the first storage and the second storage for the cause-unidentified manufacturing data and the cause-identified manufacturing data that have a feature quantity similar to that of the process-targeted manufacturing data. The display displays the search result.

Abstract: Provided is a marine engine, including: a piston; and a compression ratio controller configured to execute lowering processing of moving a top dead center position of the piston toward a bottom dead center side when an engine rotation speed falls within a resonance occurrence range set in advance. A geometrical compression ratio is reduced, and a resonance stress caused by a torsional vibration in a rotary system can thus be suppressed while suppressing a decrease in thermal efficiency compared with a case in which retarding control is applied to a fuel injection timing or a closing timing of an exhaust valve.

Abstract: An avalanche photodiode includes: a first semiconductor layer of a first conductivity type formed on a substrate of the first conductivity type; a second semiconductor layer of a second conductivity type formed under the first semiconductor layer; a third semiconductor layer of the first conductivity type formed in a shallow portion of the first semiconductor layer on the substrate, the third semiconductor layer having a higher concentration than an impurity concentration of the first semiconductor layer; a fourth semiconductor layer of the first conductivity type formed in a region in the first semiconductor layer immediately below the third semiconductor layer; a first contact electrically connected to the first semiconductor layer; and a second contact electrically connected to the second semiconductor layer. An impurity concentration of the fourth semiconductor layer is higher than that of the first semiconductor layer and is lower than that of the third semiconductor layer.

Abstract: A compression ratio control device includes a compression ratio controller configured to control a compression ratio of a combustion chamber so that the maximum combustion pressure approaches a combustion pressure upper limit value (cylinder-internal-pressure upper limit value) based on a detection signal of a detector at least when an engine load is equal to or less than a predetermined load (engine full load).

Abstract: A compression ratio control device includes a compression ratio controller configured to control a compression ratio of a combustion chamber so that the maximum combustion pressure approaches a combustion pressure upper limit value (cylinder-internal-pressure upper limit value) based on a detection signal of a detector at least when an engine load is equal to or less than a predetermined load (engine full load).

Abstract: An avalanche photodiode includes a first-conductivity-type semiconductor layer; a first second-conductivity-type semiconductor layer; a second second-conductivity-type semiconductor layer; a third second-conductivity-type semiconductor layer; a fourth second-conductivity-type semiconductor layer; a fifth second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer and the second second-conductivity-type semiconductor layer form an avalanche junction. The first and third second-conductivity-type semiconductor layers are electrically connected together via the fourth second-conductivity-type semiconductor layer such that the semiconductor substrate and the first-conductivity-type semiconductor layer are electrically isolated from each other.

Abstract: Provided is a marine engine, including: a piston; and a compression ratio controller configured to execute lowering processing of moving a top dead center position of the piston toward a bottom dead center side when an engine rotation speed falls within a resonance occurrence range set in advance. A geometrical compression ratio is reduced, and a resonance stress caused by a torsional vibration in a rotary system can thus be suppressed while suppressing a decrease in thermal efficiency compared with a case in which retarding control is applied to a fuel injection timing or a closing timing of an exhaust valve.

Abstract: An avalanche photodiode includes: a first semiconductor layer of a first conductivity type formed on a substrate of the first conductivity type; a second semiconductor layer of a second conductivity type formed under the first semiconductor layer; a third semiconductor layer of the first conductivity type formed in a shallow portion of the first semiconductor layer on the substrate, the third semiconductor layer having a higher concentration than an impurity concentration of the first semiconductor layer; a fourth semiconductor layer of the first conductivity type formed in a region in the first semiconductor layer immediately below the third semiconductor layer; a first contact electrically connected to the first semiconductor layer; and a second contact electrically connected to the second semiconductor layer. An impurity concentration of the fourth semiconductor layer is higher than that of the first semiconductor layer and is lower than that of the third semiconductor layer.

Abstract: A monitoring system includes storage, and one or more processors. The storage stores at least one of first output data that is obtained from a learning model, or first statistical information that is obtained from the first output data. The processors calculate a degree of abnormality indicating a degree of change in statistical information of second output data with respect to the first statistical information, or a degree of change in the statistical information of the second output data with respect to second statistical information. The processors determine whether or not there is occurrence of an abnormality in the learning model, on the basis of the degree of abnormality. The processors output information indicating occurrence of the abnormality, in a case where occurrence of the abnormality is determined.

Abstract: An avalanche photodiode according to the present invention includes, inside a substrate semiconductor layer having a first conductivity type and a uniform impurity concentration, a first semiconductor layer having the first conductivity type, a second semiconductor layer having a second conductivity type, a third semiconductor layer having the second conductivity type, a fourth semiconductor layer having the second conductivity type, a fifth semiconductor layer having the first conductivity type and formed at a position away from the third semiconductor layer in a lateral direction, a sixth semiconductor layer having the second conductivity type, a first contact, and a second contact. The first semiconductor layer is positioned just under the second semiconductor layer and the fifth semiconductor layer in contact therewith. An avalanche phenomenon is caused at a junction between the first semiconductor layer and the second semiconductor layer.

Abstract: According to one embodiment, a model update support system supports an update of a first model trained using a training data group. The training data group includes a plurality of labeled data and includes a plurality of labels respectively labeling the plurality of labeled data. The system includes a processor. The processor is configured to output first information or second information based on a classification certainty and a plurality of similarities. The classification certainty is calculated using the first model and indicates a sureness of a classification of first data. The plurality of similarities respectively indicates likenesses between the first data and the plurality of labeled data. The first information indicates that the training of the first model is insufficient. The second information indicates that one of the plurality of labels is inappropriate.

Abstract: The image processing method includes a luminance value information obtaining step of obtaining effective radiance values from a subject, and an image generating step of generating a picture image as a set of unit regions each of which has a luminance value obtained by at least partially removing a regular reflection light component on a surface of the subject from the effective radiance values.

Abstract: A photosensor includes a light emitting element that radiates light onto an object to be detected and a light receiving element that has a light-receiving surface for receiving light radiated from the light emitting element. An incident light regulation portion covering the light-receiving surface is provided on a path along which the light radiated from the light emitting element directed toward the light-receiving surface, and the incident light regulation portion transmits light having an incident angle less than a predetermined value and blocks light having the incident angle greater than or equal to the predetermined value among light incident on the light receiving element.

Abstract: An avalanche photodiode includes a first-conductivity-type semiconductor layer formed within a first-conductivity-type semiconductor substrate; a first second-conductivity-type semiconductor layer formed so as to surround, in plan view for the substrate, with a gap width, the first-conductivity-type semiconductor layer; a second second-conductivity-type semiconductor layer formed deeper than the first-conductivity-type semiconductor layer and in contact with the bottom portion of the first-conductivity-type semiconductor layer; and a third second-conductivity-type semiconductor layer formed deeper than the second second-conductivity-type semiconductor layer and in contact with the bottom portion of the second second-conductivity-type semiconductor layer; and a fourth second-conductivity-type semiconductor layer formed between the first second-conductivity-type semiconductor layer and the third second-conductivity-type semiconductor layer so as to be in contact with at least a portion of a bottom portion of