Patents by Inventor Takahisa Hayashi
Takahisa Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9935419Abstract: In an optical fiber device having a configuration in which an optical fiber is joined to a side surface of another optical fiber, a joint portion is suppressed from reaching a high temperature. The optical fiber device includes a first fluoride fiber, a second fluoride fiber, and a heat dissipation member. The first fluoride fiber guides light. The second fluoride fiber has a first end on or from which light is incident or output and a second end at which an end surface of the second fluoride fiber is obliquely joined to a side surface of the first fluoride fiber.Type: GrantFiled: July 24, 2015Date of Patent: April 3, 2018Assignees: MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD., OSAKA UNIVERSITYInventors: Masanao Murakami, Christian Schaefer, Satoshi Hattori, Takahisa Hayashi, Seiji Shimizu, Shigeki Tokita
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Publication number: 20170256903Abstract: In an optical fiber device having a configuration in which an optical fiber is joined to a side surface of another optical fiber, a joint portion is suppressed from reaching a high temperature. The optical fiber device includes a first fluoride fiber, a second fluoride fiber, and a heat dissipation member. The first fluoride fiber guides light. The second fluoride fiber has a first end on or from which light is incident or output and a second end at which an end surface of the second fluoride fiber is obliquely joined to a side surface of the first fluoride fiber.Type: ApplicationFiled: July 24, 2015Publication date: September 7, 2017Inventors: Masanao MURAKAMI, Christian SCHAEFER, Satoshi HATTORI, Takahisa HAYASHI, Seiji SHIMIZU, Shigeki TOKITA
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Patent number: 7576377Abstract: A ferroelectric memory device includes a semiconductor substrate, a first insulating film, a plurality of first and second plugs which extend through the first insulating film, conductive hydrogen barrier films, ferroelectric capacitor structural bodies, a first insulating hydrogen barrier film provided so as to cover the ferroelectric capacitor structural bodies, a second insulating film, local wirings extending on the second insulating film, a second insulating hydrogen barrier film which covers the local wirings, a third insulating film, third plugs which extend through the third insulating film so as to connect to their corresponding conductive hydrogen barrier films, and a first wiring layer extending on the third insulating film.Type: GrantFiled: May 26, 2006Date of Patent: August 18, 2009Assignee: Oki Semiconductor Co., Ltd.Inventor: Takahisa Hayashi
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Publication number: 20080142877Abstract: A nonvolatile semiconductor memory having an LDD structure includes a control gate located above a channel region, insulating layers formed on the both side surface of the control gate, and I-letter shaped charge-storage layers formed on the insulating layers wherein a bottom surface of the each charge-storage layer are located above the LDD.Type: ApplicationFiled: November 28, 2007Publication date: June 19, 2008Inventors: Takahisa Hayashi, Takashi Yuda
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Publication number: 20080116508Abstract: A semiconductor memory device of the invention includes a substrate, a convex semiconductor formed convexly on the substrate, a channel region formed within the convex semiconductor, source and drain regions formed within the convex semiconductor so as to sandwich the channel region, a resistance transition region formed so as to be sandwiched at least between the channel region and the source region or between the channel region and the drain region within the convex semiconductor, a gate electrode covering at least both side-faces of a part where the channel region of the convex semiconductor is formed and charge trapping layers covering at least both side-faces of a part of the convex semiconductor where the resistance transition regions are formed. Due to this configuration, there is provided the semiconductor memory device that can prevent its erroneous operation.Type: ApplicationFiled: November 2, 2007Publication date: May 22, 2008Applicant: OKI ELECTRIC INDUSTRY CO., LTD.Inventors: Takahisa HAYASHI, Shinya OZAWA, Koji TAKAYA
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Patent number: 7224175Abstract: A probe mark reading device for reading probe marks stormed on electrode pads of semiconductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.Type: GrantFiled: February 17, 2006Date of Patent: May 29, 2007Assignees: Dainippon Screen Mfg. Co., Ltd., Tokyo Electron LimitedInventors: Hiromi Chaya, Takahisa Hayashi, Shigekazu Komatsu
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Patent number: 7221177Abstract: A probe apparatus with control-position detection means is provided for testing an electrical characteristic of a to-be-tested object formed on a substrate W. The probe apparatus includes a prober chamber, a susceptor provided in the prober chamber for placing thereon a to-be-tested object, and a moving mechanism for moving the susceptor in X-, Y-, Z- and ?-directions. The probe apparatus further includes a probe card having a plurality of probes and opposing the susceptor, and a first optical length-measuring unit. The first length-measuring unit emits light to the surface of the to-be-tested object placed on the susceptor, and detects the Z-directional position of the to-be-tested object based on the light reflected from the object. The probe apparatus can have a second length-measuring unit.Type: GrantFiled: July 20, 2005Date of Patent: May 22, 2007Assignee: Tokyo Electron LimitedInventors: Shigekazu Komatsu, Takanori Hyakudomi, Hiromi Chaya, Takahisa Hayashi, Yukihide Shigeno
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Patent number: 7195974Abstract: A method of manufacturing a ferroelectric film capacitor includes forming a platinum film used as an electrode material over a whole surface of a silicon substrate, batch-etching the platinum film to form opposite electrodes that serve as a pair of capacitor electrodes, and embedding a ferroelectric film corresponding to a dielectric film of the capacitor into a portion interposed between the pair of opposite electrodes.Type: GrantFiled: November 24, 2004Date of Patent: March 27, 2007Assignee: Oki Electric Industry Co., Ltd.Inventor: Takahisa Hayashi
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Publication number: 20060267057Abstract: A ferroelectric memory device includes a semiconductor substrate, a first insulating film, a plurality of first and second plugs which extend through the first insulating film, conductive hydrogen barrier films, ferroelectric capacitor structural bodies, a first insulating hydrogen barrier film provided so as to cover the ferroelectric capacitor structural bodies, a second insulating film, local wirings extending on the second insulating film, a second insulating hydrogen barrier film which covers the local wirings, a third insulating film, third plugs which extend through the third insulating film so as to connect to their corresponding conductive hydrogen barrier films, and a first wiring layer extending on the third insulating film.Type: ApplicationFiled: May 26, 2006Publication date: November 30, 2006Inventor: Takahisa Hayashi
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Patent number: 7094611Abstract: A method of producing a ferroelectric capacitor includes preparing a semiconductor substrate having MOSFETs with an impurity diffused area in a memory cell area and a peripheral circuit area; forming a first interlayer insulating film on the semiconductor substrate; forming a conductive plug in the first interlayer insulating film to be electrically connected to the impurity diffused area; forming a second interlayer insulating film on the first interlayer insulating film; removing a portion of the second interlayer insulating film in the memory cell area to expose the first interlayer insulating film and the conductive plug; laminating a first conductive layer, a ferroelectric layer, and a second conductive layer sequentially on the first interlayer insulating film and the second interlayer insulating film to form a capacitor forming laminated film; forming an etching mask on the capacitor forming laminated film; and etching the capacitor forming laminated film to form a ferroelectric capacitor.Type: GrantFiled: August 17, 2005Date of Patent: August 22, 2006Assignee: Oki Electric Industry Co., Ltd.Inventor: Takahisa Hayashi
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Publication number: 20060139628Abstract: A probe mark reading device for reading probe marks stormed on electrode pads of semi conductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.Type: ApplicationFiled: February 17, 2006Publication date: June 29, 2006Applicants: DAINIPPON SCREEN MFG. CO., LTD., TOKYO ELECTRON LIMITEDInventors: Hiromi Chaya, Takahisa Hayashi, Shigekazu Komatsu
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Patent number: 7026832Abstract: A probe mark reading device for reading probe marks stormed on electrode pads of semiconductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.Type: GrantFiled: October 9, 2003Date of Patent: April 11, 2006Assignees: Dainippon Screen Mfg. Co., Ltd., Tokyo Electron LimitedInventors: Hiromi Chaya, Takahisa Hayashi, Shigekazu Komatsu
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Patent number: 6982455Abstract: A semiconductor device has a ferroelectric capacitor. The semiconductor device includes an interlayer insulating layer, a ferroelectric capacitor and an insulating side wall film. The interlayer insulating layer is formed on a substrate including an integrated circuit and has a contact hole exposing a part of the integrated circuit. The ferroelectric capacitor is formed by depositing a first electrode layer, a ferroelectric layer and a second electrode layer on the interlayer insulating layer in this order. The insulating side wall film covers a peripheral edge section of the ferroelectric capacitor and is spaced from a peripheral edge section of the contact hole. A wiring layer electrically connects the second electrode layer to the integrated circuit through the contact hole.Type: GrantFiled: November 4, 2003Date of Patent: January 3, 2006Assignee: Oki Electric Industry Co., Ltd.Inventor: Takahisa Hayashi
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Publication number: 20050272170Abstract: A method of manufacturing a ferroelectric film capacitor includes forming a platinum film used as an electrode material over a whole surface of a silicon substrate, batch-etching the platinum film to form opposite electrodes that serve as a pair of capacitor electrodes, and embedding a ferroelectric film corresponding to a dielectric film of the capacitor into a portion interposed between the pair of opposite electrodes.Type: ApplicationFiled: November 24, 2004Publication date: December 8, 2005Inventor: Takahisa Hayashi
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Publication number: 20050253613Abstract: A probe apparatus with control-position detection means is provided for testing an electrical characteristic of a to-be-tested object formed on a substrate W. The probe apparatus includes a prober chamber, a susceptor provided in the prober chamber for placing thereon a to-be-tested object, and a moving mechanism for moving the susceptor in X-, Y-, Z- and ?-directions. The probe apparatus further includes a probe card having a plurality of probes and opposing the susceptor, and a first optical length-measuring unit. The first length-measuring unit emits light to the surface of the to-be-tested object placed on the susceptor, and detects the Z-directional position of the to-be-tested object based on the light reflected from the object. The probe apparatus can have a second length-measuring unit.Type: ApplicationFiled: July 20, 2005Publication date: November 17, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Shigekazu Komatsu, Takanori Hyakudomi, Hiromi Chaya, Takahisa Hayashi, Yukihide Shigeno
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Publication number: 20040238865Abstract: A semiconductor device having a ferroelectric capacitor is provided. The semiconductor device includes an interlayer insulating layer, a ferroelectric capacitor and an insulating side wall film. The interlayer insulating layer is formed on a substrate including an integrated circuit and has a contact hole exposing a part of the integrated circuit. The ferroelectric capacitor is formed by depositing a first electrode layer, a ferroelectric layer and a second electrode layer on the interlayer insulating layer in this order. The insulating side wall film covers a peripheral edge section of the ferroelectric capacitor and is spaced from a peripheral edge section of the contact hole. A wiring layer electrically connects the second electrode layer to the integrated circuit through the contact hole.Type: ApplicationFiled: November 4, 2003Publication date: December 2, 2004Inventor: Takahisa Hayashi
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Publication number: 20040081349Abstract: A probe mark reading device for reading probe marks stormed on electrode pads of semiconductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.Type: ApplicationFiled: October 9, 2003Publication date: April 29, 2004Applicants: DAINIPPON SCREEN MFG, CO., LTD, TOKYO ELECTRON LIMITEDInventors: Hiromi Chaya, Takahisa Hayashi, Shigekazu Komatsu
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Patent number: 6573076Abstract: An object of the present invention is to provide novel genes and gene group involved in cellulose synthesis of microorganisms. The present invention relates to a gene group encoding cellulase, cellulose synthase complex, &bgr;-glucosidase and the like, and to novel &bgr;-glucosidase.Type: GrantFiled: March 9, 2000Date of Patent: June 3, 2003Assignee: Ajinomoto Co., Inc.Inventors: Naoto Tonouchi, Takayasu Tsuchida, Fumihiro Yoshinaga, Naoki Tahara, Hisato Yano, Takahisa Hayashi
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Patent number: 6316251Abstract: An object of the present invention is to provide novel genes and gene group involved in cellulose synthesis of microorganisms. The present invention relates to a gene group encoding cellulase, cellulose synthase complex, &bgr;-glucosidase and the like, and to novel &bgr;-glucosidase.Type: GrantFiled: April 8, 1999Date of Patent: November 13, 2001Assignee: Bio-Polymer Research Co., Ltd.Inventors: Naoto Tonouchi, Takayasu Tsuchida, Fumihiro Yoshinaga, Naoki Tahara, Hisato Yano, Takahisa Hayashi
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Patent number: 6051407Abstract: mRNA was extracted at the stage for cotton plant fibrous cells to accumulate cellulose, and cDNA's complementary thereto were synthesized to construct a cDNA library. Clones of a number of 750 were arbitrarily selected from the library, and they were randomly subjected to sequencing. Those having homology to an amino acid sequence deduced from a gene of cellulose 4-.beta.-glucosyltransferase (bcsA) of cellulose synthase operon of acetic acid bacterium were selected from obtained nucleotide sequences of the respective clones. Thus, DNA coding for cellulose synthase was obtained.Type: GrantFiled: March 30, 1998Date of Patent: April 18, 2000Assignees: Nisshinbo Industries, Inc., Takahisa HayashiInventors: Osamu Hasegawa, Satoshi Aotsuka, Takahisa Hayashi, Yuri Ihara