Abstract: A thin film formation method includes setting a film formation subject to 200° C. or higher. A first step includes changing a first state, in which a film formation material and a carrier gas are supplied so that the film formation material collects on the film formation subject, to a second state, in which the film formation material is omitted. A second step includes changing a third state, in which a hydrogen gas and a carrier gas are supplied to reduce the film formation material, to a fourth state, in which the hydrogen gas is omitted. The film formation material is any one of Al(CxH2x+1)3, Al(CxH2x+1)2H, and Al(CxH2x+1)2Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.

Abstract: This method comprises: a first step for raising the temperature of an object on which a film is being formed to at least 200° C. and changing from a first state in which a film-forming material and a carrier gas are supplied to the object on which the film is being formed to deposit the film-forming material on the object on which the film is being formed to a second state in which the supply of the film-forming material is eliminated from the first state; and a second step for raising the temperature of the object on which the film is being formed to at least 200° C. and changing from a third state in which hydrogen gas and a carrier gas are supplied to the object on which the film is being formed to reduce the film-forming material to a fourth state in which the supply of the hydrogen gas is eliminated from the third state. The film-forming material is any one material selected from the group consisting of Al(CxH2x+1)3, Al(CxH2x+1)2H, and Al(CxH2x+1)2Cl.

Abstract: Provided is a thin film production apparatus that enables cost reduction and improvement of deposition efficiency by employing a common component. In a thin film production apparatus according to the present invention, a volume of a reaction space is optimized by determining the volume of the reaction space with an inner block disposed inside a vacuum tank, that is, by merely altering a size of an inner diameter of the inner block without altering a size of the vacuum tank. Accordingly, film formation on plural kinds of substrates having different sizes becomes possible using the common vacuum tank. Further, increase of the number of apparatus structural components to be prepared for each size of the substrate to be processed can be minimized, whereby the cost of the components can be reduced, and, while simplifying assembling operation, product inspection operation, and adjusting operation, excellent deposition efficiency and stable film formation can be realized.

Abstract: A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

Abstract: The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film.

Abstract: A gas head that, at low cost, is capable of suppressing any deactivation of radical gas and capable of uniformly introducing a raw material gas on a substrate; and a relevant thin-film manufacturing apparatus are provided. A gas head (13) according to the present invention includes a reactive gas introduction port (30A) for introduction of a reactive gas, a plurality of raw material gas introduction ports (30B) for introduction of a raw material gas, and a dispersion board (32) for dispersing the raw material gas, wherein the plurality of the raw material gas introduction ports (30B) are disposed so as to surround the periphery of the reactive gas introduction port (30A). The reactive gas having been introduced in the reactive gas introduction port (30A) is mixed with the raw material gas having been introduced through a plurality of raw material gas introduction ports (30B) and dispersed by means of the dispersion board (32).

Abstract: Film-forming apparatus including a film-forming vacuum chamber having a stage for a substrate, a chamber for mixing gas comprising a raw gas and a reactive gas connected to the film-forming chamber, a chamber for vaporizing the raw material, and a gas head for introducing the mixed gas into the film-forming chamber, disposed on the upper face of the film-forming chamber and opposed to the stage. Particle traps with controllable temperatures are positioned between the vaporization chamber and the mixing chamber and on the downstream side of the mixing chamber. When forming a thin film with the apparatus, a reactive gas and/or a carrier gas are passed through the film-forming chamber while opening a valve in a by-pass line, connecting the primary side to the secondary side of the particle trap arranged at the downstream side of the mixing chamber. The valve is then closed and the film-forming operation is initiated.

Abstract: A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

Abstract: A method for forming a tantalum nitride film, which comprises supplying a gaseous nitrogen atom-containing compound, as a reactant gas and supplying gaseous t-amylimido-tris-(dimethylamide)tantalum, as a gaseous raw material, to the surface of the substrate S to thus form a tantalum nitride film on the surface of the substrate S; and a film-forming apparatus, which comprises a reactant gas supply line L4; a container 13 for liquefy a raw material; an evaporator 11 for gasify the liquefied raw material; a liquid mass flow controller 12 for controlling the amount of the liquid raw material to be supplied; and a gaseous raw material supply line L1. These method and apparatus would permit the stable supply of the gaseous raw material at all times and the improvement of the throughput of the substrate to be processed and as a result, the method and the apparatus permit the improvement of the productivity of the tantalum nitride film.

Abstract: A film forming method in which a crystalline film having PZT (111) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: forming an oxide film whose interplanar spacing is closer to the PZT (111) than to the noble metal, on a surface of the foundation film; and forming the crystalline film on the surface of the foundation film by an MOCVD method.

Abstract: A film forming method in which crystalline film having PZT (001) or PZT (100) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: performing reduction treatment on a surface of the foundation film; and forming the crystalline film by an MOCVD method on the surface of the foundation film.

Abstract: The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level.

Abstract: A gas head that, at low cost, is capable of suppressing any deactivation of radical gas and capable of uniformly introducing a raw material gas on a substrate; and a relevant thin-film manufacturing apparatus are provided. A gas head (13) according to the present invention includes a reactive gas introduction port (30A) for introduction of a reactive gas, a plurality of raw material gas introduction ports (30B) for introduction of a raw material gas, and a dispersion board (32) for dispersing the raw material gas, wherein the plurality of the raw material gas introduction ports (30B) are disposed so as to surround the periphery of the reactive gas introduction port (30A). The reactive gas having been introduced in the reactive gas introduction port (30A) is mixed with the raw material gas having been introduced through a plurality of raw material gas introduction ports (30B) and dispersed by means of the dispersion board (32).

Abstract: Provided is a thin film production apparatus that enables cost reduction and improvement of deposition efficiency by employing a common component. In a thin film production apparatus according to the present invention, a volume of a reaction space is optimized by determining the volume of the reaction space with an inner block disposed inside a vacuum tank, that is, by merely altering a size of an inner diameter of the inner block without altering a size of the vacuum tank. Accordingly, film formation on plural kinds of substrates having different sizes becomes possible using the common vacuum tank. Further, increase of the number of apparatus structural components to be prepared for each size of the substrate to be processed can be minimized, whereby the cost of the components can be reduced, and, while simplifying assembling operation, product inspection operation, and adjusting operation, excellent deposition efficiency and stable film formation can be realized.

Abstract: An oxide thin film having good characteristic properties is prepared by reducing an occurrence of an oxygen defect of the resulting oxide thin film and promoting the epitaxial growth of the film. The oxide thin film is prepared by admixing a raw gas, a carrier gas and an oxidation gas and supplying the resulting gas mixture on a heated substrate placed in a reaction chamber from a shower plate through a gas activating means which is maintained, by a heating means, at such a temperature that any liquefaction, deposition and film-formation of a raw material are never caused, to thus make the oxidation gas react with one another and to prepare the oxide thin film on the substrate. In this case, a rate of the oxidation gas flow rate is not less than 60% on the basis of the gas mixture. Furthermore, a flow rate of oxidation gas used for forming an initial layer by nucleation is less than 60%, and a flow rate of oxidation gas used in a subsequent film-forming process for forming a second layer is not less than 60%.

Abstract: A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

Abstract: A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

Abstract: A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

Abstract: The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level.

Abstract: The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film.