Abstract: A surface-emitting laser element includes a translucent substrate, a back surface of which is light emission surface, an air-hole layer that is a photonic crystal layer, and a light reflection layer including a reflection surface. The air-hole layer has a diffraction surface which has a weakening region where a separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of interference light generated by interference of first diffracted light and second diffracted light is lower than a light intensity of the first diffracted light is provided, and a strengthening region where a separation distance between the diffraction surface and the reflection surface is provided such that the light intensity of the interference light is higher than the light intensity of the first diffracted light is provided.

Abstract: A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a first light-emitting layer; a second light-emitting layer; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a base layer with composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned into a random net shape; and a first quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The second light-emitting layer has a second quantum well structure layer composed of a plurality of barrier layers that have different compositions from that of the at least one barrier layer of the first quantum well structure layer, and at least one quantum well layer.

Abstract: A semiconductor light-emitting element according to the present invention is a semiconductor light-emitting element including: a first semiconductor layer of a first conductivity type; a light-emitting functional layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer has: a base layer formed on the first semiconductor layer, the base layer having a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape, the base layer being doped with a dopant of the second conductivity type; and a quantum well light-emitting layer formed on the base layer.

Abstract: A semiconductor light-emitting element according to the present invention includes a first semiconductor layer of a first conductivity type, a light-emitting functional layer formed on the first semiconductor layer, and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer includes a doped layer that is formed on the first semiconductor layer and doped with a dopant of the second conductivity type, a base layer formed on the doped layer, the base layer having such a composition that causes stress and strain in said base layer from the doped layer, said base layer including a plurality of base segments formed in a random net shape, and a quantum well structure layer formed on the base layer.

Abstract: A semiconductor light-emitting element according to the present invention is a semiconductor light-emitting element including: a first semiconductor layer of a first conductivity type; a light-emitting functional layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer has: a base layer formed on the first semiconductor layer, the base layer having a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape, the base layer being doped with a dopant of the second conductivity type; and a quantum well light-emitting layer formed on the base layer.

Abstract: A semiconductor light-emitting element according to the present invention includes a first semiconductor layer of a first conductivity type, a light-emitting functional layer formed on the first semiconductor layer, and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer includes a doped layer that is formed on the first semiconductor layer and doped with a dopant of the second conductivity type, a base layer formed on the doped layer, the base layer having such a composition that causes stress and strain in said base layer from the doped layer, said base layer including a plurality of base segments formed in a random net shape, and a quantum well structure layer formed on the base layer.

Abstract: A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a first light-emitting layer; a second light-emitting layer; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a base layer with composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned into a random net shape; and a first quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The second light-emitting layer has a second quantum well structure layer composed of a plurality of barrier layers that have different compositions from that of the at least one barrier layer of the first quantum well structure layer, and at least one quantum well layer.