Patents by Inventor Takamichi Fujii

Takamichi Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10914638
    Abstract: Provided is a pyroelectric sensor including: an Si substrate; a laminated portion in which a heat absorption layer formed of an inorganic material, a lower electrode, a piezoelectric film, and an upper electrode are laminated in this order from one surface side of the Si substrate on the one surface; and an optical filter that is provided at a position of the other surface of the Si substrate corresponding to the laminated portion and selectively transmits an infrared ray, in which an infrared ray incident to the laminated portion from the optical filter side through the Si substrate is sensed.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: February 9, 2021
    Assignee: FUJIFILM Corporation
    Inventor: Takamichi Fujii
  • Publication number: 20200235284
    Abstract: A method of manufacturing a power generation element includes a first step of disposing a support unit that supports a vibration unit in one end portion of the vibration unit in one direction, and disposing a weight unit in the other end portion of the vibration unit in the one direction in a substrate including the vibration unit capable of vibrating, a second step of disposing a piezoelectric unit that generates power due to vibration in a portion of the vibration unit on an opposite side from the support unit side in a thickness direction of the substrate after the support unit and the weight unit are disposed in the vibration unit, and a third step of extracting a power generation element from the substrate by cutting an outer edge of the vibration unit in the thickness direction of the substrate after the piezoelectric unit is disposed in the vibration unit.
    Type: Application
    Filed: April 7, 2020
    Publication date: July 23, 2020
    Inventors: Takamichi FUJII, Kenichi UMEDA
  • Publication number: 20200003627
    Abstract: Provided is a pyroelectric sensor including: an Si substrate; a laminated portion in which a heat absorption layer formed of an inorganic material, a lower electrode, a piezoelectric film, and an upper electrode are laminated in this order from one surface side of the Si substrate on the one surface; and an optical filter that is provided at a position of the other surface of the Si substrate corresponding to the laminated portion and selectively transmits an infrared ray, in which an infrared ray incident to the laminated portion from the optical filter side through the Si substrate is sensed.
    Type: Application
    Filed: September 10, 2019
    Publication date: January 2, 2020
    Applicant: FUJIFILM Corporation
    Inventor: Takamichi FUJII
  • Publication number: 20190214541
    Abstract: Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12). The interlayer (22) is formed of a material different from that of the second electrode (18) and has a thickness of 0.4 ?m to 10 ?m. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (12). The respective layers (14 to 28) laminated on the silicon substrate (12) can be formed using a thin film formation method represented by a vapor phase epitaxial method.
    Type: Application
    Filed: March 13, 2019
    Publication date: July 11, 2019
    Applicant: FUJIFILM Corporation
    Inventors: Takamichi FUJII, Takayuki NAONO
  • Patent number: 10217929
    Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+?B1-x-yNbxNiyOz??General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1?x?0.3 and 0?y?0.75x. Although standard values of ? and z are ?=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: February 26, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Naoki Murakami, Takamichi Fujii, Takami Arakawa
  • Publication number: 20180254406
    Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+?B1-x-yNbxNiyOz??General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1?x?0.3 and 0?y?0.75x. Although standard values of ? and z are ?=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.
    Type: Application
    Filed: May 1, 2018
    Publication date: September 6, 2018
    Applicant: FUJIFILM Corporation
    Inventors: Naoki MURAKAMI, Takamichi FUJII, Takami ARAKAWA
  • Patent number: 10011111
    Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1?x)1?aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: July 3, 2018
    Assignee: FUJIFILM Corporation
    Inventors: Naoki Murakami, Takami Arakawa, Takamichi Fujii
  • Publication number: 20180123017
    Abstract: A piezoelectric element is obtained using a method including: preparing a first structure; preparing a second structure; disposing a first facing electrode layer of the first structure to face a first surface of a vibration plate substrate and bonding the first structure to the first surface of the vibration plate substrate; processing the vibration plate substrate into a vibration plate by polishing or etching a second surface of the vibration plate substrate to which the first structure is bonded; preparing a laminate structure by disposing a second facing electrode layer of the second structure to face an exposed surface of the vibration plate and bonding the second structure to the vibration plate; and removing at least a part of a first silicon substrate of the first structure and a second silicon substrate of the second structure from the laminate structure.
    Type: Application
    Filed: December 19, 2017
    Publication date: May 3, 2018
    Applicant: FUJIFILM Corporation
    Inventors: Takamichi FUJII, Takayuki NAONO
  • Publication number: 20170186936
    Abstract: A piezoelectric element includes: a titanium-containing adhesion layer, a lower electrode, a PZT-based piezoelectric film, and an upper electrode, which are sequentially provided on a silicon substrate, in which the lower electrode includes a columnar structure film consisting of a large number of columnar crystals which are grown from a surface of the titanium-containing adhesion layer and have a platinum group element as a primary component, and an adhesion layer component diffused from the titanium containing adhesion layer and oxygen diffused from the piezoelectric film side, which are present in the columnar structure film, and a main column diameter of the columnar crystal of the columnar structure film is 50 nm or more and 200 nm or less.
    Type: Application
    Filed: March 16, 2017
    Publication date: June 29, 2017
    Applicant: FUJIFILM Corporation
    Inventors: Takamichi FUJII, Takehiro KASAHARA
  • Publication number: 20170157931
    Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1-x)1-aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.
    Type: Application
    Filed: February 22, 2017
    Publication date: June 8, 2017
    Applicant: FUJIFILM Corporation
    Inventors: Naoki MURAKAMI, Takami ARAKAWA, Takamichi FUJII
  • Patent number: 9620704
    Abstract: In a method for etching a piezoelectric film and a manufacturing method thereof, a piezoelectric film is formed on a substrate on which a lower electrode is formed, a metal film having a thickness of 20 nm to 300 nm is formed, a patterned resist film is formed, the metal film is etched with a first etchant to which the piezoelectric film has etching resistance, and the piezoelectric film is etched with a second etchant to which the metal film has etching resistance.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: April 11, 2017
    Assignee: FUJIFILM Corporation
    Inventors: Takamichi Fujii, Akihiro Mukaiyama
  • Patent number: 9437801
    Abstract: A piezoelectric device, which has bipolar polarization-electric field (Pr-E) hysteresis characteristics of a piezoelectric material asymmetrically biased, when a first and second coercive electric fields respectively having smaller and larger absolute values are defined as Ec1 and Ec2 and a bias ratio of the coercive electric field is defined as [(Ec2+Ec1)/(Ec2?Ec1)]×100[%], includes a piezoelectric element unit including a piezoelectric body film whose bias ratio is 20% or more, the piezoelectric element unit operating with an electric field intensity smaller than that of the first coercive electric field. The piezoelectric device includes a refresh voltage applying circuit configured to apply a voltage to maintain operation performance of the relevant device, the voltage having an electric field intensity larger than the electric field intensity for operating the device and being equal to or less than three times |Ec1|, such that a polarized state of the piezoelectric body film is restored.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: September 6, 2016
    Assignee: FUJIFILM Corporation
    Inventor: Takamichi Fujii
  • Publication number: 20160240768
    Abstract: Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12). The interlayer (22) is formed of a material different from that of the second electrode (18) and has a thickness of 0.4 ?m to 10 ?m. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (12). The respective layers (14 to 28) laminated on the silicon substrate (12) can be formed using a thin film formation method represented by a vapor phase epitaxial method.
    Type: Application
    Filed: April 25, 2016
    Publication date: August 18, 2016
    Applicant: FUJIFILM Corporation
    Inventors: Takamichi FUJII, Takayuki NAONO
  • Patent number: 9406809
    Abstract: There is provided a field effect transistor having, on a substrate, at least a gate electrode, a gate insulating film, an active layer mainly containing an oxide semiconductor that contains at least one of In, Ga or Zn, a source electrode, and a drain electrode, the field effect transistor including: a heat diffusion layer, wherein, given that a thermal conductivity of the substrate is Nsub (W/mK), a thermal conductivity of the heat diffusion layer is Nkaku (W/mK), a film thickness of the heat diffusion layer is T (mm), a planar opening ratio of the heat diffusion layer is R (0?R?1), and S=T×R, the thermal conductivity Nsub of the substrate satisfies the condition Nsub<1.8, and the thermal conductivity Nkaku of the heat diffusion layer satisfies the conditions Nkaku>3.0×S^(?0.97×e^(?1.2×Nsub)) and Nkaku?Nsub.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: August 2, 2016
    Assignee: FUJIFILM Corporation
    Inventors: Kenichi Umeda, Takamichi Fujii
  • Publication number: 20160027996
    Abstract: In a method for etching a piezoelectric film and a manufacturing method thereof, a piezoelectric film is formed on a substrate on which a lower electrode is formed, a metal film having a thickness of 20 nm to 300 nm is formed, a patterned resist film is formed, the metal film is etched with a first etchant to which the piezoelectric film has etching resistance, and the piezoelectric film is etched with a second etchant to which the metal film has etching resistance.
    Type: Application
    Filed: September 30, 2015
    Publication date: January 28, 2016
    Applicant: FUJIFILM Corporation
    Inventors: Takamichi FUJII, Akihiro MUKAIYAMA
  • Patent number: 9136459
    Abstract: A piezoelectric device includes: a substrate; a first electrode which is layered over the substrate; a first piezoelectric film which is layered over the first electrode; a metal oxide film which is layered over the first piezoelectric film; a metal film which is layered over the metal oxide film; a second piezoelectric film which is layered over the metal film; and a second electrode which is layered over the second piezoelectric film.
    Type: Grant
    Filed: October 3, 2012
    Date of Patent: September 15, 2015
    Assignee: FUJIFILM Corporation
    Inventors: Takamichi Fujii, Yoshikazu Hishinuma
  • Patent number: 9111732
    Abstract: The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: August 18, 2015
    Assignee: FUJIFILM Corporation
    Inventors: Takamichi Fujii, Takayuki Naono
  • Publication number: 20150194591
    Abstract: A piezoelectric device, which has bipolar polarization-electric field (Pr-E) hysteresis characteristics of a piezoelectric material asymmetrically biased, when a first and second coercive electric fields respectively having smaller and larger absolute values are defined as Ec1 and Ec2 and a bias ratio of the coercive electric field is defined as [(Ec2+Ec1)/(Ec2?Ec1)]×100[%], includes a piezoelectric element unit including a piezoelectric body film whose bias ratio is 20% or more, the piezoelectric element unit operating with an electric field intensity smaller than that of the first coercive electric field. The piezoelectric device includes a refresh voltage applying circuit configured to apply a voltage to maintain operation performance of the relevant device, the voltage having an electric field intensity larger than the electric field intensity for operating the device and being equal to or less than three times |Ec1|, such that a polarized state of the piezoelectric body film is restored.
    Type: Application
    Filed: March 18, 2015
    Publication date: July 9, 2015
    Applicant: FUJIFILM Corporation
    Inventor: Takamichi FUJII
  • Patent number: 9024512
    Abstract: A resonant transducer comprising: a vibration plate; and a piezoelectric element including a piezoelectric film and an upper electrode that are laminated on the vibration plate, wherein a compressive stress is applied to the piezoelectric film.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: May 5, 2015
    Assignee: FUJIFILM Corporation
    Inventors: Yasutoshi Hirabayashi, Takamichi Fujii
  • Patent number: 8974626
    Abstract: A method of manufacturing a micro structure, includes the steps of: preparing separate first and second substrates, the first substrate having a first surface on which a first structural body having a first height and a second structural body having a second height greater than the first height of the first structural body are arranged, the second substrate having a second surface; then placing the first and second substrates to cause the first and second surfaces to face each other across the first and second structural bodies; and then bonding the first and second substrates to each other while compressing the second structural body in a height direction thereof between the first and second surfaces to cause the second structural body to have a height defined by the first structural body.
    Type: Grant
    Filed: March 22, 2011
    Date of Patent: March 10, 2015
    Assignee: FUJIFILM Corporation
    Inventors: Takamichi Fujii, Akihiro Mukaiyama