Patents by Inventor Takamitsu Tadera
Takamitsu Tadera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6866747Abstract: On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.Type: GrantFiled: May 10, 2004Date of Patent: March 15, 2005Assignees: Sharp Kabushiki KaishaInventors: Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Publication number: 20040206456Abstract: On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.Type: ApplicationFiled: May 10, 2004Publication date: October 21, 2004Inventors: Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Patent number: 6776879Abstract: It is an object of the invention to provide a backing plate used for the sputtering apparatus and a sputtering method which can improve film deposition rate and film quality without increasing the size of the target with respect to the substrate. High sputtering power is applied to a target portion opposite to a location where a thin film is formed on a surface of a substrate, thereby a thin film having even film thickness and film quality can be formed without increasing the size of the target. Further, a cooling medium flow passage can eliminate temperature unevenness caused by different sputtering powers to be applied to a target surface. The problem caused by the temperature rise can be solved and the film deposition speed can be enhanced by increasing the sputtering power which can be applied to the target. Consequently, it is possible to improve productivity of the substrate.Type: GrantFiled: January 28, 2002Date of Patent: August 17, 2004Assignee: Sharp Kabushiki KaishaInventors: Tatsushi Yamamoto, Takamitsu Tadera
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Patent number: 6753496Abstract: On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.Type: GrantFiled: December 7, 2001Date of Patent: June 22, 2004Assignees: Sharp Kabushiki KaishaInventors: Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Patent number: 6726802Abstract: A plasma processing apparatus includes a slot plate having a slot-formed region for passing microwave from a waveguide to a microwave entrance window, and a slot plate drive unit driving the slot plate to change the position of the slot plate with respect to the microwave entrance window. The slot plate is thus moved with respect to the microwave entrance window to change at least one of the position, number and area of slot openings where the microwave is passed. The plasma processing apparatus accordingly ensures uniform plasma processing even if the process condition significantly changes when films on a large-area substrate or wafer to be processed are made of different materials or a stacked-layer film composed of layers of different materials is to be processed.Type: GrantFiled: August 2, 2002Date of Patent: April 27, 2004Assignees: Sharp Kabushiki KaishaInventors: Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Patent number: 6638392Abstract: A plasma process apparatus includes a dielectric plate to emit plasma inside a chamber, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.Type: GrantFiled: December 7, 2000Date of Patent: October 28, 2003Assignees: Sharp Kabushiki KaishaInventors: Naoko Yamamoto, Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Patent number: 6527908Abstract: A plasma process apparatus capable of preventing generation of plasma in an unwanted location and performing uniform plasma processing with stability is obtained. The plasma process apparatus includes a processing chamber having an internal wall surface; a microwave radiating member having one wall surface and the other wall surface that faces the internal wall surface of the processing chamber, and being disposed such that a space is formed between the other wall surface and a portion of the internal wall surface, and propagating and radiating microwaves within the processing chamber; and a reactive gas supply member, including a reactive gas supply passage having a space formed between the other wall surface of the microwave radiating member and the internal wall surface; and a microwave transmission preventing member disposed on a region, which faces the reactive gas supply passage, of the other wall surface of the microwave radiating member.Type: GrantFiled: March 21, 2001Date of Patent: March 4, 2003Assignees: Sharp Kabushiki KaishaInventors: Norio Kanetsuki, Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Publication number: 20030024647Abstract: A plasma processing apparatus includes a slot plate having a slot-formed region for passing microwave from a waveguide to a microwave entrance window, and a slot plate drive unit driving the slot plate to change the position of the slot plate with respect to the microwave entrance window. The slot plate is thus moved with respect to the microwave entrance window to change at least one of the position, number and area of slot openings where the microwave is passed. The plasma processing apparatus accordingly ensures uniform plasma processing even if the process condition significantly changes when films on a large-area substrate or wafer to be processed are made of different materials or a stacked-layer film composed of layers of different materials is to be processed.Type: ApplicationFiled: August 2, 2002Publication date: February 6, 2003Inventors: Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Patent number: 6446573Abstract: A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.Type: GrantFiled: August 9, 2001Date of Patent: September 10, 2002Assignees: Sharp Kabushiki KaishaInventors: Masaki Hirayama, Tadahiro Ohmi, Tatsushi Yamamoto, Takamitsu Tadera
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Publication number: 20020100680Abstract: It is an object of the invention to provide a backing plate used for the sputtering apparatus and a sputtering method which can improve film deposition rate and film quality without increasing the size of the target with respect to the substrate. High sputtering power is applied to a target portion opposite to a location where a thin film is formed on a surface of a substrate, thereby a thin film having even film thickness and film quality can be formed without increasing the size of the target. Further, a cooling medium flow passage can eliminate temperature unevenness caused by different sputtering powers to be applied to a target surface. The problem caused by the temperature rise can be solved and the film deposition speed can be enhanced by increasing the sputtering power which can be applied to the target. Consequently, it is possible to improve productivity of the substrate.Type: ApplicationFiled: January 28, 2002Publication date: August 1, 2002Inventors: Tatsushi Yamamoto, Takamitsu Tadera
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Publication number: 20020079294Abstract: On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.Type: ApplicationFiled: December 7, 2001Publication date: June 27, 2002Inventors: Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Publication number: 20020043341Abstract: A plasma process apparatus capable of preventing generation of plasma in an unwanted location and performing uniform plasma processing with stability is obtained. The plasma process apparatus includes a processing chamber having an internal wall surface; a microwave radiating member having one wall surface and the other wall surface that faces the internal wall surface of the processing chamber, and being disposed such that a space is formed between the other wall surface and a portion of the internal wall surface, and propagating and radiating microwaves within the processing chamber; and a reactive gas supply member, including a reactive gas supply passage having a space formed between the other wall surface of the microwave radiating member and the internal wall surface; and a microwave transmission preventing member disposed on a region, which faces the reactive gas supply passage, of the other wall surface of the microwave radiating member.Type: ApplicationFiled: March 21, 2001Publication date: April 18, 2002Inventors: Norio Kanetsuki, Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Publication number: 20010052322Abstract: A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.Type: ApplicationFiled: August 9, 2001Publication date: December 20, 2001Inventors: Masaki Hirayama, Tadahiro Ohmi, Tatsushi Yamamoto, Takamitsu Tadera
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Patent number: 6286454Abstract: A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding device, a shower plate and a reaction gas supply passage. The microwave guiding device guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is a positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.Type: GrantFiled: May 30, 2000Date of Patent: September 11, 2001Assignees: Tadahiro Ohmi, Sharp Kabushiki KaishaInventors: Masaki Hirayama, Tadahiro Ohmi, Tatsushi Yamamoto, Takamitsu Tadera
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Publication number: 20010010207Abstract: A plasma process apparatus includes a dielectric plate to emit plasma to a chamber interior, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.Type: ApplicationFiled: December 7, 2000Publication date: August 2, 2001Inventors: Naoko Yamamoto, Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
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Patent number: 6155511Abstract: A capstan motor which includes: a stator yoke having a multiple number of coils provided on a circle centered about a rotational shaft; and a rotor yoke having an annular magnet opposing the multiple number of coils and rotating integrally with the rotational shaft, and is constructed such that a hysteresis plate is provided opposing the rotor yoke on the side opposite the multiple number of coils for receiving leakage of the magnetic flux from the magnet and is attached rotatably relative to the rotary shaft; and driving force for rotation is extracted from the hysteresis plate, and a tape driving system using it.Type: GrantFiled: March 16, 1999Date of Patent: December 5, 2000Assignee: Sharp Kabushiki KaishaInventors: Takamitsu Tadera, Koji Yamabuchi, Mitsunobu Yoshida
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Patent number: 5663845Abstract: A magnetic recording/reproducing apparatus compares speed information obtained by speed detecting means for a magnetic tape with a set travelling speed of the magnetic tape in a control circuit, and controls the rotational frequency of a driving motor for a take-up reel, thereby controlling constant-speed travelling of the magnetic tape, with employment of no capstan. According to this system, the overall apparatus can be simplified and miniaturized with reduction in weight and cost. Further, it is possible to improve constant-speed travelling performance of the magnetic tape by adjusting resonance and antiresonance appearing due to total equivalent inertia moment related to the magnetic tape and reels in the transfer characteristic of the control system.Type: GrantFiled: May 18, 1995Date of Patent: September 2, 1997Assignee: Sharp Kabushiki KaishaInventors: Tatsushi Yamamoto, Shigeaki Kakiwaki, Tohru Okuda, Hideo Okada, Masaji Tsuji, Takamitsu Tadera, Akihito Yoshimoto
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Patent number: 5521780Abstract: The present invention has been achieved to provide a novel tape cassette capable of stable and excellent magnetic recording and reproducing operations realizes highly accurate head touch necessary for tendency to Hi-Fi and digitization with a simple structure that does not require relatively high shape accuracy. In order to achieve the above object, a novel tape cassette for use in magnetic recording/reproducing apparatus of fixed head type, comprises: magnetic tape 2, a pressure pad 3 and a pad base 13 having the pressure pad 3 fixed thereon, incorporated in a tape cassette 10, being characterized in that when a magnetic head 8 is inserted in the tape cassette 10, the pad base 3 is positioned relative to the magnetic head 8 by positioning pins 17a and 17b disposed in the magnetic recording/reproducing apparatus.Type: GrantFiled: June 28, 1994Date of Patent: May 28, 1996Assignee: Sharp Kabushiki KaishaInventors: Shigemi Asai, Tohru Okuda, Hideo Okada, Hiroaki Takeuchi, Takamitsu Tadera
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Patent number: 5491594Abstract: A magnetic recording/reproducing apparatus compares speed information obtained by speed detecting means for a magnetic tape with a set travelling speed of the magnetic tape in a control circuit, and controls the rotational frequency of a driving motor for a take-up reel, thereby controlling constant-speed travelling of the magnetic tape, with employment of no capstan. According to this system, the overall apparatus can be simplified and miniaturized with reduction in weight and cost. Further, it is possible to improve constant-speed travelling performance of the magnetic tape by adjusting resonance and antiresonance appearing due to total equivalent inertia moment related to the magnetic tape and reels in the transfer characteristic of the control system.Type: GrantFiled: May 20, 1993Date of Patent: February 13, 1996Assignee: Sharp Kabushiki KaishaInventors: Tatsushi Yamamoto, Sigeaki Kakiwaki, Tohru Okuda, Hideo Okada, Masaji Tsuji, Takamitsu Tadera, Akihito Yoshimoto