Abstract: A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm?3.

Abstract: The portable device of the present invention for regulating the hardness of drinking water includes a collapsible electrode group (20) including ion-adsorbing electrodes (21) and (22) and a power supply (13) for applying a voltage between the ion-adsorbing electrode (21) and the ion-adsorbing electrode (22). The first ion-adsorbing electrode (21) includes a first electrically conductive material capable of adsorbing ions. The second ion-adsorbing electrode includes a second electrically conductive material capable of adsorbing ions. In an example, a voltage is applied between the first ion-adsorbing electrode (21) and the second ion-adsorbing electrode (22), with the first and second ion-adsorbing electrodes (21) and (22) being immersed in the drinking water (25). The applied voltage regulates the amount of ions adsorbed on the first and second electrically conductive materials, and thereby the hardness of the drinking water is regulated.

Abstract: A radiation-sensitive resin composition includes a compound shown by a formula (1) in which R1 represents a divalent hydrocarbon group having 1 to 20 carbon atoms and R2 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, or R1 and R2 form a heterocyclic structure having 4 to 20 carbon atoms, R3 represents a monovalent acid-dissociable group, n is an integer from 1 to 6, each of R4A, R4B, and R4C represents one of an alkyl group having 1 to 4 carbon atoms and a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or R4A represents one of an alkyl group having 1 to 4 carbon atoms and a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms and R4B and R4C form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms.

Abstract: To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency. The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.

Abstract: When reverse bias processing is performed, on a plurality of photoelectric conversion devices connected in series, different potentials are applied to electrodes of three or more photoelectric conversion devices to simultaneously perform reverse bias processing on two or more reverse photoelectric conversion devices. Thereby, time taken to perform reverse bias processing on the photoelectric conversion devices can be reduced.

Abstract: In the case of performing at least two plasma processing steps in a common plasma reaction chamber, a CW AC power or a pulse-modulated AC power is appropriately selected as a power for plasma processing in each step. Thereby, even in a step where plasma processing conditions are limited due to apparatus configurations, the plasma processing can be performed in more various manners. Further, uniform plasma can be generated between electrodes and a quantity of a power to be supplied between the electrodes can be reduced, by using the pulse-modulated AC power. Thereby, a plasma processing speed can be reduced so that throughput control is facilitated.

Abstract: With a small and simple constitution, a three-dimensional subject and a sheet document can be imaged. There are provided an image forming unit (110) for forming an image, an top face sheet ejecting unit (130) for ejecting a paper sheet (P) onto the top face of the device body (101), a top face ejected sheet tray (150) capable of receiving an ejected paper sheet (P) and openable/closable with respect to the device body (101), a platen glass (160) on which a subject is placed, a two-dimensional sensor (170) provided to the top face ejected sheet tray (150) to image the subject placed on the platen glass (160), and a manual feed unit (210) for transporting sheet originals (S) one by one and passing an original through an original information read section. The two-dimensional sensor (170) is so provided that the image of the sheet original appearing in the original information read section is formed on the partial area of the imaging area (170a).

Abstract: There is provided a system control method which reduces maximum energy consumption in a tracking-type photovoltaic power generation system having a plurality of tracking-type photovoltaic power generation devices and reduces energy supply capacity. An integrated control part drives driving parts in each of tracking-type photovoltaic power generation devices at predetermined time intervals and drives the driving parts at different times, which can disperse temporally the large energy consumed at the time of activation of the driving parts in the tracking-type photovoltaic power generation devices, thereby reducing the energy supply capacity.

Abstract: An organic semiconductor film that can be used for an electron device, for example, particularly can be used for organic TFTs so as to allow the TFTs to have advanced performance, is provided and a manufacturing method therefor is provided. For instance, the organic semiconductor film contains the organic conductive high polymer compound such as polythiophene represented by the below formula (I). The organic semiconductor film is formed by forming a solution in a thin film form, the solution showing two or more spectral peaks (spectral state B) in a wavelength region of 300 to 800 nm by measurement using a visible and ultraviolet absorption spectral method; and drying the solution formed in the thin film form. Alternatively, the organic semiconductor film can be formed by the method in which the organic conductive high polymer compound has a molecular weight distribution range Mw/Mn from 1.00 to 1.85, obtained by dividing a weight-average molecular weight Mw by a number-average molecular weight Mn.

Abstract: A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm?3.

Abstract: A stacked photoelectric conversion device includes a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each having a p-i-n junction and made of a silicon base semiconductor, stacked in this order from a light entrance side, wherein the first and the second photoelectric conversion layers have an i-type amorphous layer made of an amorphous silicon base semiconductor, respectively, and the third photoelectric conversion layer has an i-type microcrystalline layer made of a microcrystalline silicon base semiconductor.

Abstract: A piezoelectric actuator is constructed by forming a common electrode 27 of Cr, a piezoelectric layer 29 of Pb(Zr,Ti)O3, a cover layer 31 of BaTiO3, and an individual electrode 33 of Pt in this order into a laminate. The thickness of the piezoelectric layer 29 in the lamination direction (T1) and the thickness of the cover layer 31 in the lamination direction (T2) satisfy the relationship of 0.08?T2/T1?1. The relative dielectric constant of the piezoelectric layer 29 (?r1) and the relative dielectric constant of the cover layer 31 (?r2) satisfy the relationship of ?r2/?r1?0.2.

Abstract: An image forming apparatus with three-dimensional object imaging capability is provided that is compact, has a small footprint, and is easy to use. This apparatus has a top-surface paper ejection unit (130) that ejects paper P on which an image has been formed by an image forming unit (110) onto the top surface of the apparatus body (101); a top-surface paper ejection tray (150) that can be opened and closed with respect to the apparatus body (101) and receives paper P ejected by the top-surface paper ejection unit (130); an object placement platform (160) whose object placement surface (161), on which an object is placed, is exposed by opening the top-surface paper ejection tray (150); and a two-dimensional sensor (170) for imaging an object placed on the object placement platform (160). The apparatus has a configuration in which the top-surface paper ejection tray (150), when open, serves as a support for the imaging section.

Abstract: A piezoelectric actuator 21 has: a piezoelectric actuator part 22 made up of a common electrode 27, a piezoelectric element 29, and an individual electrode 33; an electrical interconnection joint part 43 formed on the individual electrode 33; an electrical interconnection 45 formed on the electrical interconnection joint part 43; a head block 47 fixed to a nozzle plate 39 through the electrical interconnection 45; and a PI tape 49 disposed within the head block 47. A closed space 57 is defined between the head block 47 and the nozzle plate 39. The closed space 57 is divided by the PI tape 49 into two sections. Of these two sections of the closed space 57, the one on the side of the head block 47 constitutes a first closed space 57a. A moisture absorbent 52 is sealed within the first closed space 57a. Relative humidity within the closed space 57 of the ink jet head 1 is not less than 0% nor more than 20%.

Abstract: An electronic paper having a display unit formed of a flexible sheet. The electronic paper comprises the display unit composed of a light-emitting device and a switching device and a drive unit composed of a drive circuit disposed at one edge of the display unit. The light-emitting device and the switching device both operate at low operating frequencies and are made of a flexible organic semiconductor. Since the hardness of the drive unit can be high, a semiconductor device having a high operating frequency such as a C-MOS is provided to the drive unit. Though the switching time is relatively long, the data setting time can be short. As a result, a sharp image can be produced.

Abstract: A ferroelectric element is described which has a structure including a common electrode 11, a ferroelectric film 10 formed on the common electrode 11, an individual electrode 3 formed on the ferroelectric film 10, a lead wire 15 for feeding electric power to the individual electrode 3, which is formed on the same plane as of the individual electrode 3, and a protection film 16 entirely covering the exposed parts of the ferroelectric film 10 and the individual electrode 3, and covering the lead wire 15. The protection film 16 is preferably made of a material whose Young's modulus is smaller than that of the ferroelectric film 10, exactly 1/20 or smaller of the Young's modulus of the ferroelectric film 10. Further, the ferroelectric film is formed with the insulation reinforcing film containing at least one of the elements constituting the ferroelectric film.

Abstract: A first line head 1 and a second line head 2 are arranged in a scanning direction X. In each of the line heads 1 and 2, actuator blocks 40 are arranged at a constant interval in a head longitudinal direction Y so as to be spaced apart from one another. The actuator block 40 of the second line head 2 is located between the actuator blocks 40 and 40 of the first line head 1 with respect to the head longitudinal direction Y. The actuator block 40 of the first line head 1 and the actuator block 40 of the second line head 2 partially overlap with each other with respect to the head longitudinal direction Y.

Abstract: A piezoelectric actuator 21 has: a piezoelectric actuator part 22 made up of a common electrode 27, a piezoelectric element 29, and an individual electrode 33; an electrical interconnection joint part 43 formed on the individual electrode 33; an electrical interconnection 45 formed on the electrical interconnection joint part 43; a head block 47 fixed to a nozzle plate 39 through the electrical interconnection 45; and a PI tape 49 disposed within the head block 47. A closed space 57 is defined between the head block 47 and the nozzle plate 39. The closed space 57 is divided by the PI tape 49 into two sections. Of these two sections of the closed space 57, the one on the side of the head block 47 constitutes a first closed space 57a. A moisture absorbent 52 is sealed within the first closed space 57a. Relative humidity within the closed space 57 of the ink jet head 1 is not less than 0% nor more than 20%.

Abstract: A piezoelectric actuator 21 has: a piezoelectric actuator part 22 made up of a common electrode 27, a piezoelectric element 29, and an individual electrode 33; an electrical interconnection joint part 43 formed on the individual electrode 33; an electrical interconnection 45 formed on the electrical interconnection joint part 43; a head block 47 fixed to a nozzle plate 39 through the electrical interconnection 45; and a PI tape 49 disposed within the head block 47. A closed space 57 is defined between the head block 47 and the nozzle plate 39. The closed space 57 is divided by the PI tape 49 into two sections. Of these two sections of the closed space 57, the one on the side of the head block 47 constitutes a first closed space 57a. A moisture absorbent 52 is sealed within the first closed space 57a. Relative humidity within the closed space 57 of the ink jet head 1 is not less than 0% nor more than 20%.

Abstract: A first line head 1 and a second line head 2 are arranged in a scanning direction X. In each of the line heads 1 and 2, actuator blocks 40 are arranged at a constant interval in a head longitudinal direction Y so as to be spaced apart from one another. The actuator block 40 of the second line head 2 is located between the actuator blocks 40 and 40 of the first line head 1 with respect to the head longitudinal direction Y. The actuator block 40 of the first line head 1 and the actuator block 40 of the second line head 2 partially overlap with each other with respect to the head longitudinal direction Y.