Patents by Inventor Takanori TADA
Takanori TADA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230178579Abstract: To prevent the occurrence of poor connection between an electrode pad and a bonding wire. A light receiving element includes a wiring region, an electrode pad, a first recessed portion, and a second recessed portion. The wiring region is disposed next to the front side of a semiconductor substrate, the wiring region including a wiring layer for transmitting a signal and an insulating layer for insulating the wiring layer, the wiring layer being connected to a photoelectric conversion unit that is disposed in the semiconductor substrate and performs photoelectric conversion on incident light. The electrode pad is disposed in the wiring region and is connected to the wiring layer so as to be connected to the outside. The first recessed portion is formed on the back side of the semiconductor substrate and has the bottom near the front side of the semiconductor substrate and near the electrode pad.Type: ApplicationFiled: February 8, 2021Publication date: June 8, 2023Inventors: MAKOTO OONO, TAKANORI TADA, KENJI TOSHIMA
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Publication number: 20230102481Abstract: A decrease in an insulation resistance between a separation region at a boundary between pixels and a wiring layer is prevented. A light receiving element includes the pixels, the separation region, the wiring layer, and a wiring layer protective film. The pixels included in the light receiving element have photoelectric conversion units, each photoelectric conversion unit being disposed in a semiconductor substrate to perform photoelectric conversion of incident light. The separation region included in the light receiving element is disposed at a boundary between the photoelectric conversion units and separates the photoelectric conversion units from each other. The wiring layer included in the light receiving element is wired to the pixels. The wiring layer protective film included in the light receiving element is disposed between the separation region and the wiring layer to protect the wiring layer.Type: ApplicationFiled: February 10, 2021Publication date: March 30, 2023Inventors: KENZO ISHIBASHI, TAKANORI TADA, TAKUSHI SHIGETOSHI, JUNPEI YAMAMOTO
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Patent number: 11282884Abstract: There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.Type: GrantFiled: December 14, 2017Date of Patent: March 22, 2022Assignee: Sony Semiconductor Solutions CorporationInventors: Junpei Yamamoto, Takushi Shigetoshi, Takanori Tada, Shinpei Fukuoka
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Publication number: 20210217623Abstract: The present invention aims to improve the accuracy and stability when removing an insulating film at a bottom of a TSV to allow a through hole to open toward a connection target electrode. A semiconductor device manufacturing method including: forming a through hole in a semiconductor substrate by using anisotropic etching performed from a first surface side of the semiconductor substrate; forming a thin film being an insulating film on an entire inner surface of the through hole; forming a carbon-containing thin film using plasma deposition on the first surface including an opening edge portion of the through hole; engraving an inner bottom of the through hole by using anisotropic plasma etching with the carbon-containing thin film as a mask; removing the carbon-containing thin film by ashing; and forming a through-substrate electrode in the through hole.Type: ApplicationFiled: January 29, 2021Publication date: July 15, 2021Applicant: SONY CORPORATIONInventors: Takushi SHIGETOSHI, Takanori TADA
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Patent number: 10930516Abstract: The present invention aims to improve the accuracy and stability when removing an insulating film at a bottom of a TSV to allow a through hole to open toward a connection target electrode. A semiconductor device manufacturing method including: forming a through hole in a semiconductor substrate by using anisotropic etching performed from a first surface side of the semiconductor substrate; forming a thin film being an insulating film on an entire inner surface of the through hole; forming a carbon-containing thin film using plasma deposition on the first surface including an opening edge portion of the through hole; engraving an inner bottom of the through hole by using anisotropic plasma etching with the carbon-containing thin film as a mask; removing the carbon-containing thin film by ashing; and forming a through-substrate electrode in the through hole.Type: GrantFiled: May 8, 2017Date of Patent: February 23, 2021Assignee: Sony CorporationInventors: Takushi Shigetoshi, Takanori Tada
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Patent number: 10870738Abstract: A polyester sheet including a polyester (A), a 4-methyl-1-pentene polymer (B) having a specific heat of fusion and a meso diad fraction (m) of 98.5 to 100%, and a compatibilizing agent (C), wherein content proportions of the (A), (B), and (C) are 60 to 98.9 parts by mass for (A), 1 to 25 parts by mass for (B), and 0.1 to 15 parts by mass for (C), when a total content of (A), (B), and (C) is set as 100 parts by mass, and wherein (B) satisfies the requirements (a) to (d) described herein.Type: GrantFiled: December 13, 2017Date of Patent: December 22, 2020Assignee: MITSUI CHEMICALS, INC.Inventors: Masakazu Tanaka, Toyoaki Sasaki, Yasuhito Tsugane, Kenkichi Yoshida, Kenjiro Takamine, Masahiko Okamoto, Takanori Tada
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Publication number: 20200071475Abstract: A polyester sheet including a polyester (A), a 4-methyl-1-pentene polymer (B) having a specific heat of fusion and a meso diad fraction (m) of 98.5 to 100%, and a compatibilizing agent (C), wherein content proportions of the (A), (B), and (C) are 60 to 98.9 parts by mass for (A), 1 to 25 parts by mass for (B), and 0.1 to 15 parts by mass for (C), when a total content of (A), (B), and (C) is set as 100 parts by mass, and wherein (B) satisfies the requirements (a) to (d) described herein.Type: ApplicationFiled: December 13, 2017Publication date: March 5, 2020Applicant: MITSUI CHEMICALS, INC.Inventors: Masakazu TANAKA, Toyoaki SASAKI, Yasuhito TSUGANE, Kenkichi YOSHIDA, Kenjiro TAKAMINE, Masahiko OKAMOTO, Takanori TADA
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Publication number: 20190326345Abstract: There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.Type: ApplicationFiled: December 14, 2017Publication date: October 24, 2019Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Junpei YAMAMOTO, Takushi SHIGETOSHI, Takanori TADA, Shinpei FUKUOKA
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Publication number: 20190198337Abstract: The present invention aims to improve the accuracy and stability when removing an insulating film at a bottom of a TSV to allow a through hole to open toward a connection target electrode. A semiconductor device manufacturing method including: forming a through hole in a semiconductor substrate by using anisotropic etching performed from a first surface side of the semiconductor substrate; forming a thin film being an insulating film on an entire inner surface of the through hole; forming a carbon-containing thin film using plasma deposition on the first surface including an opening edge portion of the through hole; engraving an inner bottom of the through hole by using anisotropic plasma etching with the carbon-containing thin film as a mask; removing the carbon-containing thin film by ashing; and forming a through-substrate electrode in the through hole.Type: ApplicationFiled: May 8, 2017Publication date: June 27, 2019Applicant: SONY CORPORATIONInventors: Takushi SHIGETOSHI, Takanori TADA