Abstract: A wiring board includes a variable wettability layer situated on a top surface of a support board and containing a material of which a critical surface tension changes by energy given thereto. A conductive layer is situated inside a concave portion formed in the variable wettability layer. The concave portion has opposite side walls formed in tapered surfaces inclining so that a distance between the side walls is reduced toward a bottom of the concave portion in a cross-sectional shape taken along a plane perpendicular to a conducting direction of the conductive layer. Upper edges of the side walls are formed in gently curved surfaces.

Abstract: A method of forming a stacked-layer wiring includes forming first wettability variable layer on a substrate using material that changes surface energy by energy application; forming first conductive layer in or on the first wettability variable layer; forming second wettability variable layer on the first wettability variable layer using material that changes surface energy by energy application; forming concave portion to become wiring pattern of second conductive layer to the second wettability variable layer while concurrently forming high surface energy area on surface exposed by forming the concave portion by changing surface energy; forming via hole by exposing a part of the first conductive layer while concurrently forming high surface energy area on surface exposed by forming the via hole by changing surface energy; and applying conductive ink to the high surface energy area to form the second conductive layer and via simultaneously.

Abstract: An ink containing an organic semiconductive material precursor containing a dithienobenzodithiophene derivative of the following formula: X and Y are groups capable of bonding together upon application of an external stimulus to form a compound X—Y that is capable of eliminating from the dithienobenzodithiophene derivative; R1 and R2 are each independently a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and R3 to R10 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.

Abstract: A method of forming a stacked-layer wiring includes forming first wettability variable layer on a substrate using material that changes surface energy by energy application; forming first conductive layer in or on the first wettability variable layer; forming second wettability variable layer on the first wettability variable layer using material that changes surface energy by energy application; forming concave portion to become wiring pattern of second conductive layer to the second wettability variable layer while concurrently forming high surface energy area on surface exposed by forming the concave portion by changing surface energy; forming via hole by exposing a part of the first conductive layer while concurrently forming high surface energy area on surface exposed by forming the via hole by changing surface energy; and applying conductive ink to the high surface energy area to form the second conductive layer and via simultaneously.

Abstract: A wiring board includes a variable wettability layer situated on a top surface of a support board and containing a material of which a critical surface tension changes by energy given thereto. A conductive layer is situated inside a concave portion formed in the variable wettability layer. The concave portion has opposite side walls formed in tapered surfaces inclining so that a distance between the side walls is reduced toward a bottom of the concave portion in a cross-sectional shape taken along a plane perpendicular to a conducting direction of the conductive layer. Upper edges of the side walls are formed in gently curved surfaces.

Abstract: A method of manufacturing an interconnection member includes forming on a substrate a wettability changing layer containing a material in which critical surface tension is changed by giving energy; forming a depression part in the wettability changing layer by a laser ablation method using a laser of an ultraviolet region; and coating the depression part with an electrically conductive ink to form an electrically conductive part. At the same time when a pattern of the depression part is formed in the wettability changing layer, a pattern of a high surface energy area is formed as a result of the critical surface tension being changed.

Abstract: A disclosed laminated structure includes a wettability-variable layer containing a wettability-variable material whose surface energy changes when energy is applied thereto and including at least a high-surface-energy area having high surface energy and a low-surface-energy area having low surface energy; and a conductive layer formed on the high-surface-energy area. The high-surface-energy area includes a first area and a second area extending from the first area and having a width smaller than that of the first area.

Abstract: A multiple-layer wiring substrate having a first conductive layer; an interlayer insulating layer; and a second conductive layer is disclosed, wherein the interlayer insulating layer includes a material whose surface energy is changed by receiving energy, and has a first region which does not include a contact hole and a second region which is formed such that its surface energy is higher than that of the first region, wherein a region within the contact hole of the first conductive layer has surface energy which is higher than surface energy of the second region of the interlayer insulating layer, and wherein the second conductive layer is formed by laminating, wherein the second conductive layer is in contact with the second region of the interlayer insulating layer along the second region, and is connected to the first conductive layer via the contact hole.

Abstract: An ink containing an organic semiconductive material precursor containing a dithienobenzodithiophene derivative of the following formula: X and Y are groups capable of bonding together upon application of an external stimulus to form a compound X-Y that is capable of eliminating from the dithienobenzodithiophene derivative; R1 and R2 are each independently a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and R3 to R10 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.

Abstract: An organic semiconductive material precursor containing a dithienobenzodithiophene derivative expressed by General Formula I: in General Formula I, X and Y represent groups bonded together, upon application of external stimulus, to form X—Y which is eliminated from the compound expressed by General Formula I; R1 and R2 each represent a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and R3 to R10 each represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.

Abstract: Disclosed is a laminated structure, including a substrate, a wettability changing layer on the substrate, the wettability changing layer including a material, a critical surface tension of the material being changed by providing energy thereto, and an electrically conductor layer on the substrate, the electrically conductor layer formed on a region of the wettability changing layer, the region being provided with the energy, wherein the material includes a structural unit including a side chain and a structural unit including no side chain.

Abstract: An organic semiconductive material precursor containing a dithienobenzodithiophene derivative expressed by General Formula I: in General Formula I, X and Y represent groups bonded together, upon application of external stimulus, to form X—Y which is eliminated from the compound expressed by General Formula I; R1 and R2 each represent a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and R3 to R10 each represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.

Abstract: A leaving substituent-containing compound represented by General Formula (I), wherein the leaving substituent-containing compound can be converted to a compound represented by General Formula (Ia) and a compound represented by General Formula (II), by applying energy to the leaving substituent-containing compound, in General Formulas (I), (Ia) and (II), X and Y each represent a hydrogen atom or a leaving substituent, where one of X and Y is the leaving substituent and the other is the hydrogen atom; Q2 to Q5 each represent a hydrogen atom, a halogen atom or a monovalent organic group; Q1 and Q6 each represent a hydrogen atom or a monovalent organic group other than the leaving substituent; and among the monovalent organic groups represented by Q1 to Q6, adjacent monovalent organic groups may be linked together to form a ring.

Abstract: A multiple-layer wiring substrate having a first conductive layer; an interlayer insulating layer; and a second conductive layer is disclosed, wherein the interlayer insulating layer includes a material whose surface energy is changed by receiving energy, and has a first region which does not include a contact hole and a second region which is formed such that its surface energy is higher than that of the first region, wherein a region within the contact hole of the first conductive layer has surface energy which is higher than surface energy of the second region of the interlayer insulating layer, and wherein the second conductive layer is formed by laminating, wherein the second conductive layer is in contact with the second region of the interlayer insulating layer along the second region, and is connected to the first conductive layer via the contact hole.

Abstract: Disclosed is a laminate structure including a substrate, a wettability changing layer, and an electrical conductor layer, wherein the wettability changing layer and the electrical conductor layer are laminated on the substrate in order, wherein the wettability changing layer contains a polyimide, wherein the polyimide is obtainable by dehydrating and ring-opening a polyamic acid, wherein the polyamic acid is obtainable by ring-opening and addition-polymerizing a diamine and a tetracarboxylic acid dianhydride, wherein the diamine includes a compound represented by a general formula of: or a compound represented by a general formula of: wherein each of R1 and R2 in formula (1) is defined in the specification, and wherein R1 in formula (2) is defined in the specification.

Abstract: A method of manufacturing an interconnection member includes forming on a substrate a wettability changing layer containing a material in which critical surface tension is changed by giving energy; forming a depression part in the wettability changing layer by a laser ablation method using a laser of an ultraviolet region; and coating the depression part with an electrically conductive ink to form an electrically conductive part. At the same time when a pattern of the depression part is formed in the wettability changing layer, a pattern of a high surface energy area is formed as a result of the critical surface tension being changed.

Abstract: A laminated structure includes a wettability variable layer formed on a substrate, including a material whose critical surface tension varies by receiving energy so that high and low surface energy regions are formed; a conductive layer formed in one of the high surface energy regions; and an insulating layer formed in such a manner as to cover the conductive layer, wherein another one of the high surface energy regions is formed in such a manner as to surround a periphery of a circuit formation region in which a plurality of the conductive layers are formed; and the insulating layer is formed in such a manner as to also cover the another one of the high surface energy regions so that an adhesive guard ring region is formed between the wettability variable layer and the insulating layer.

Abstract: A laminate structure is disclosed that has a region having high surface free energy and a region having low surface free energy that are well separated, has high adhesiveness between an underlying layer and a conductive layer, and can be formed easily with low cost. The laminate structure includes a wettability-variable layer including a first surface free energy region of a first film thickness and a second surface free energy region of a second film thickness, and a conductive layer formed on the second surface free energy region of the wettability-variable layer. The second film thickness is less than the first film thickness and the surface free energy of the second surface free energy region is made higher than the surface free energy of the first surface free energy region by applying a predetermined amount of energy on the second surface free energy region.

Abstract: A disclosed organic transistor includes a substrate; a gate electrode; a gate insulating film; source-drain electrodes; and an organic semiconductor layer. The gate electrode and the gate insulating film are disposed on the substrate in the stated order, and the source-drain electrodes and the organic semiconductor layer are disposed at least on the gate insulating film in the stated order. At least one of the source-drain electrodes includes a first part disposed directly above the gate electrode, a second part disposed not over the gate electrode, and a connecting part which has a width smaller than a width of the first part and connects the first part and the second part.

Abstract: A disclosed laminated structure includes a substrate; a wettability varying layer formed on the substrate, the wettability varying layer including a material whose critical surface tension is changed by receiving energy; and an electrode layer formed on the wettability varying layer, the electrode layer forming a pattern based on the wettability varying layer. The material whose critical surface tension is changed by receiving energy includes a polymer including a primary chain and a side chain, the side chain including a multi-branched structure.