Patents by Inventor Takao Arase
Takao Arase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961719Abstract: Provided is a vacuum processing method capable of preventing particles from adhering to a wafer due to a titanium (Ti)-based reaction product. The vacuum processing method is applicable to a plasma processing apparatus including: a sample stage disposed in a processing chamber inside a vacuum container, on which a wafer having a titanium (Ti)-containing film is placed; a coil supplied with a radio frequency power for forming plasma in the processing chamber; and a heating device that emits an electromagnetic wave for heating the wafer placed on an upper surface of the sample stage. The vacuum processing method includes a step of etching the titanium (Ti)-containing film, and a step of cleaning an inside of the processing chamber by using a mixed gas of nitrogen trifluoride (NF3) gas, argon gas, and a chlorine gas.Type: GrantFiled: June 25, 2020Date of Patent: April 16, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Nozomu Yoshioka, Kazumasa Okuma, Takao Arase
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Publication number: 20230122903Abstract: Provided is a vacuum processing method capable of preventing particles from adhering to a wafer due to a titanium (Ti)-based reaction product. The vacuum processing method is applicable to a plasma processing apparatus including: a sample stage disposed in a processing chamber inside a vacuum container, on which a wafer having a titanium (Ti)-containing film is placed; a coil supplied with a radio frequency power for forming plasma in the processing chamber; and a heating device that emits an electromagnetic wave for heating the wafer placed on an upper surface of the sample stage. The vacuum processing method includes a step of etching the titanium (Ti)-containing film, and a step of cleaning an inside of the processing chamber by using a mixed gas of nitrogen trifluoride (NF3) gas, argon gas, and a chlorine gas.Type: ApplicationFiled: June 25, 2020Publication date: April 20, 2023Inventors: Nozomu Yoshioka, Kazumasa Okuma, Takao Arase
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Patent number: 11532484Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.Type: GrantFiled: October 26, 2018Date of Patent: December 20, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Taku Iwase, Takao Arase, Satoshi Terakura, Hayato Watanabe, Masahito Mori
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Patent number: 11355322Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.Type: GrantFiled: February 6, 2017Date of Patent: June 7, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Taku Iwase, Masahito Mori, Takao Arase, Kenetsu Yokogawa
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Patent number: 11257678Abstract: The invention has been made in view of the above problems, and provides a plasma processing method capable of preventing etching shape abnormality in a plasma processing method for forming a mask layer of a polysilicon film. The invention relates to a plasma processing method for plasma-etching a polysilicon film, the plasma processing method comprising plasma-etching the polysilicon film using a mixed gas including a halogen gas, a fluorocarbon gas, an oxygen gas, and a carbonyl sulfide gas.Type: GrantFiled: April 19, 2019Date of Patent: February 22, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tomohiro Takamatsu, Takao Arase, Hiroyuki Kajifusa
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Publication number: 20210249233Abstract: A plasma processing apparatus equipped with an electrode disposed inside a sample deck on which a wafer is mounted, the sample deck being disposed in the lower part within a processing chamber inside a vacuum container, the electrode being supplied with high frequency power during processing of the wafer, a ring-like member electrode made of a conductor disposed to surround the upper surface on the outer peripheral side of the sample deck, a first ring-like cover made of a dielectric body disposed to cover the ring-like member, and a second ring-like cover made of a conductor disposed to cover the first ring-like cover, and a controller that adjusts the magnitude of the high frequency power according to a result of detection of voltage of the high frequency power supplied to the ring-like member during processing of the wafer.Type: ApplicationFiled: December 18, 2019Publication date: August 12, 2021Inventors: Hiroyuki Kajifusa, Kenetsu Yokogawa, Takao Arase, Masahito Mori
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Publication number: 20200357650Abstract: The invention has been made in view of the above problems, and provides a plasma processing method capable of preventing etching shape abnormality in a plasma processing method for forming a mask layer of a polysilicon film. The invention relates to a plasma processing method for plasma-etching a polysilicon film, the plasma processing method comprising plasma-etching the polysilicon film using a mixed gas including a halogen gas, a fluorocarbon gas, an oxygen gas, and a carbonyl sulfide gas.Type: ApplicationFiled: April 19, 2019Publication date: November 12, 2020Inventors: Tomohiro TAKAMATSU, Takao ARASE, Hiroyuki KAJIFUSA
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Publication number: 20200227270Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.Type: ApplicationFiled: October 26, 2018Publication date: July 16, 2020Inventors: Taku IWASE, Takao ARASE, Satoshi TERAKURA, Hayato WATANABE, Masahito MORI
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Patent number: 10665448Abstract: A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode 3 having gas supply through holes 6, a gas supply means and a lower electrode 1, wherein the gas supply means includes a plane-like member 4 having gas through holes 8 and a plane-like member 5 having gas through holes 10, and the gas supply through holes 6 and the gas through holes 8 are connected through a groove 7, and the gas through holes 8 and the gas through holes 10 are connected through a groove 9, and wherein the gas supply through holes 6, the gas through holes 8 and the gas through holes 10 are disposed at positions, different from each other on a plane.Type: GrantFiled: July 30, 2013Date of Patent: May 26, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ken'etsu Yokogawa, Masahito Mori, Takao Arase
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Publication number: 20190214235Abstract: Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-likeType: ApplicationFiled: August 27, 2018Publication date: July 11, 2019Inventors: Kenetsu YOKOGAWA, Masakazu ISOZAKI, Yousuke SAKAI, Masahito MORI, Takao ARASE
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Patent number: 10332760Abstract: There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value.Type: GrantFiled: August 21, 2015Date of Patent: June 25, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Masahito Mori, Akira Hirata, Koichi Yamamoto, Takao Arase
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Patent number: 10157750Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.Type: GrantFiled: January 31, 2017Date of Patent: December 18, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Satoshi Terakura, Masahito Mori, Takao Arase, Taku Iwase
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Patent number: 10056236Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.Type: GrantFiled: February 27, 2017Date of Patent: August 21, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hayato Watanabe, Masahito Mori, Takao Arase, Taku Iwase
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Publication number: 20180082825Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.Type: ApplicationFiled: February 27, 2017Publication date: March 22, 2018Inventors: Hayato WATANABE, Masahito MORI, Takao ARASE, Taku IWASE
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Publication number: 20180068862Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.Type: ApplicationFiled: January 31, 2017Publication date: March 8, 2018Inventors: Satoshi TERAKURA, Masahito MORI, Takao ARASE, Taku IWASE
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Patent number: 9905431Abstract: In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NF3 gas and a CH3F gas.Type: GrantFiled: July 31, 2014Date of Patent: February 27, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Satoshi Terakura, Masahito Mori, Takao Arase, Ryuta Machida
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Patent number: D868993Type: GrantFiled: January 30, 2018Date of Patent: December 3, 2019Assignee: Hitachi High-Technologies CorporationInventors: Masakazu Isozaki, Masahito Mori, Kenetsu Yokogawa, Takao Arase, Takahisa Hashimoto
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Patent number: D870314Type: GrantFiled: January 30, 2018Date of Patent: December 17, 2019Assignee: Hitachi High-Technologies CorporationInventors: Masakazu Isozaki, Masahito Mori, Kenetsu Yokogawa, Takao Arase, Yousuke Sakai
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Patent number: D871609Type: GrantFiled: January 30, 2018Date of Patent: December 31, 2019Assignee: Hitachi High-Technologies CorporationInventors: Masakazu Isozaki, Masahito Mori, Kenetsu Yokogawa, Takao Arase, Takahisa Hashimoto
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Patent number: D891636Type: GrantFiled: April 24, 2019Date of Patent: July 28, 2020Assignee: Hitachi High-Tech CorporationInventors: Masakazu Isozaki, Masahito Mori, Kenetsu Yokogawa, Takao Arase, Taku Iwase