Abstract: A semiconductor apparatus, configured to operate on different internal voltages generated from electromagnetic waves received via an antenna, to extract a command and data from the received electromagnetic waves, and to operate according to the extracted command, includes internal circuitry configured to generate and output binary signals according to a command input from the outside in a test operation for performing a predetermined test; and output circuits corresponding to some or all of the internal voltages and configured to convert the binary signals output from the internal circuitry into binary signals having same voltages as the corresponding internal voltages and to output the converted binary signals to the outside.

Abstract: A semiconductor apparatus, configured to operate on different internal voltages generated from electromagnetic waves received via an antenna, to extract a command and data from the received electromagnetic waves, and to operate according to the extracted command, includes internal circuitry configured to generate and output binary signals according to a command input from the outside in a test operation for performing a predetermined test; and output circuits corresponding to some or all of the internal voltages and configured to convert the binary signals output from the internal circuitry into binary signals having same voltages as the corresponding internal voltages and to output the converted binary signals to the outside.

Abstract: A level shift circuit includes an initial stage circuit section which converts an input signal into a signal having a voltage level of the first high voltage power supply as a high level and a voltage level of the first low voltage power supply as a low level, an intermediate stage circuit section which level-shifts the signal output from the initial stage circuit section into a signal having the voltage level of the first high voltage power supply as a high level and the voltage level of the second low voltage power supply as a low level, and a final stage circuit section which level shifts the signal output from the intermediate stage circuit section into a signal having the voltage level of the second high voltage power supply as a high level and the voltage level of the second low voltage power supply as a low level.

Abstract: A level shift circuit includes an initial stage circuit section which converts an input signal into a signal having a voltage level of the first high voltage power supply as a high level and a voltage level of the first low voltage power supply as a low level, an intermediate stage circuit section which level-shifts the signal output from the initial stage circuit section into a signal having the voltage level of the first high voltage power supply as a high level and the voltage level of the second low voltage power supply as a low level, and a final stage circuit section which level-shifts the signal output from the intermediate stage circuit section into a signal having the voltage level of the second high voltage power supply as a high level and the voltage level of the second low voltage power supply as a low level.

Abstract: A sense circuit for sensing a memory state of a memory transistor in a semiconductor memory device by determining whether the memory transistor is on or off is provided. The sense circuit includes a first load P-channel MOS transistor for supplying a first current to the memory transistor, a reference transistor capable of passing a second current same in magnitude as the on current of the memory transistor, and a second load P-channel MOS transistor for supplying the second current to the reference transistor, whereby the second load P-channel MOS transistor is operatively coupled to the first load P-channel MOS transistor.