Patents by Inventor Takao Kanehara

Takao Kanehara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7579640
    Abstract: A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: August 25, 2009
    Assignee: Oki Semiconductor Co., Ltd.
    Inventors: Yoko Kajita, Ichiro Koiwa, Takao Kanehara, Kinya Ashikaga, Kazuhide Abe
  • Publication number: 20060065917
    Abstract: A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.
    Type: Application
    Filed: September 19, 2005
    Publication date: March 30, 2006
    Inventors: Yoko Kajita, Ichiro Koiwa, Takao Kanehara, Kinya Ashikaga, Kazuhide Abe
  • Patent number: 6528172
    Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.
    Type: Grant
    Filed: December 27, 2000
    Date of Patent: March 4, 2003
    Assignees: Tokyo Ohka Kogyo Co., Ltd., Oki Electric Industry Co., Ltd.
    Inventors: Yoshihiro Sawada, Akira Hashimoto, Ichiro Koiwa, Juro Mita, Yukihisa Okada, Takao Kanehara, Hiroyo Kato
  • Patent number: 6403160
    Abstract: An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZrxTi1−xSbyO3 (where 0 <x<1, 0.0001≦y≦0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.
    Type: Grant
    Filed: September 3, 1999
    Date of Patent: June 11, 2002
    Assignees: Oki Electric Industry Co., Ltd., Tokyo Ohka Kogyo, Co., Ltd.
    Inventors: Ichiro Koiwa, Juro Mita, Takao Kanehara, Akira Hashimoto, Yoshihiro Sawada
  • Patent number: 6309896
    Abstract: A perovskite crystallized ferroelectric substance is formed over a lower electrode. A precursor solution, which serves as a ferroelectric film, is applied thereto and dried, followed by low-temperature anneal under the condition of a perovskite crystallization temperature or lower. Further, an upper electrode is formed and thereafter subjected to high-temperature anneal at a temperature of the perovskite crystallization temperature or higher to thereby perfectly crystallize the ferroelectric film, whereby a semiconductor element interposed between the electrodes can be formed.
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: October 30, 2001
    Assignee: Oki Electric Industry Co., Ltd.
    Inventor: Takao Kanehara
  • Publication number: 20010010867
    Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.
    Type: Application
    Filed: December 27, 2000
    Publication date: August 2, 2001
    Inventors: Yoshihiro Sawada, Akira Hashimoto, Ichiro Koiwa, Juro Mita, Yukihisa Okada, Takao Kanehara, Hiroyo Kato
  • Patent number: 6197102
    Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.
    Type: Grant
    Filed: January 15, 1998
    Date of Patent: March 6, 2001
    Assignees: Tokyo Ohka Kogyo Co., Ltd., Oki Electric Industry Co., Ltd.
    Inventors: Yoshihiro Sawada, Akira Hashimoto, Ichiro Koiwa, Juro Mita, Yukihisa Okada, Takao Kanehara, Hiroyo Kato
  • Patent number: 5976705
    Abstract: An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0<x<1, 0.0001.ltoreq.y.ltoreq.0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.
    Type: Grant
    Filed: December 17, 1996
    Date of Patent: November 2, 1999
    Assignees: Oki Electric Industry Co., Ltd., Tokyo Ohka Kogyo, Co., Ltd.
    Inventors: Ichiro Koiwa, Juro Mita, Takao Kanehara, Akira Hashimoto, Yoshihiro Sawada
  • Patent number: 5811153
    Abstract: Alkoxymetals, .beta.-diketones or metal acetates which are metal compounds corresponding independently to Bi, metallic element A (which is at least one member of the group consisting of Ca, Ba, Sr, Pb and Bi) and metallic element B (which is at least one member of the group consisting of Ti, Nb and Ta) are reacted with alcohols, carboxylic anhydrides, glycols, .beta.-diketones or dicarboxylic acid monoesters to prepare compounds for inclusion in coating solutions for use in forming Bi-based dielectric thin films. The coating solutions are used to produce dielectric thin films or memories.
    Type: Grant
    Filed: April 18, 1997
    Date of Patent: September 22, 1998
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Akira Hashimoto, Yoshihiro Sawada, Tetsuya Osaka, Ichiro Koiwa, Juro Mita, Takao Kanehara