Abstract: Provided is an etching solution composition that can have both a higher etch selectivity of silicon nitride and a reduction in the deposition of silica on the surface of silicon oxide. An inorganic acid-based etching solution composition for selectively etching away silicon nitride from a semiconductor containing silicon nitride and silicon oxide, the etching solution composition comprising: (a) an etch inhibitor that reduces etching of silicon oxide; and (b) a deposition inhibitor that reduces deposition of silica on a surface of silicon oxide.

Abstract: In a screw compressor, on a bearing side relative to a discharge port of a compression chamber in a casing, an intermediate-pressure chamber to which an intermediate-pressure coolant is supplied from outside of the casing is provided in a high-pressure space surrounded by an outer cylinder and an intermediate cylinder of the casing and communicating with the discharge port, and the intermediate-pressure coolant has a temperature and a pressure that are lower than those of a coolant in the high-pressure space and higher than a coolant in a low-pressure space on a motor side relative to the discharge port in the casing. The intermediate-pressure chamber and the low-pressure space communicate with each other.

Abstract: Workability in a manufacturing process of a semiconductor device is improved. A terminal member is the terminal member joined to an electrode of a semiconductor element, and includes a conductor portion, a first annular projecting portion, and an annular recess. The conductor portion has a first main surface and a second main surface located on a side opposite to the first main surface. The first annular projecting portion is provided on the first main surface of the conductor portion. The annular recess is provided on the second main surface and is disposed at a position overlapping with the first annular projecting portion. By pressing a joining member against the first main surface of the terminal member, the first annular projecting portion can be embedded in the joining member.

Abstract: A plurality of semiconductor elements have sources which are commonly connected, and drains which are commonly connected. A voltage measurement unit measures an ON voltage between the source of a first semiconductor element of the plurality of semiconductor elements and the drain of the first semiconductor element. A determination unit receives information indicating a magnitude of an ON current between the source of the first semiconductor element and the drain of the first semiconductor element, and a measured value of the ON voltage in the voltage measurement unit, and determines whether the plurality of semiconductor elements are in a normal state or in an overheated state based on the measured value of the ON voltage and the received information indicating the magnitude of the ON current.

Abstract: A plurality of semiconductor elements have sources which are commonly connected, and drains which are commonly connected. A voltage measurement unit measures an ON voltage between the source of a first semiconductor element of the plurality of semiconductor elements and the drain of the first semiconductor element. A determination unit receives information indicating a magnitude of an ON current between the source of the first semiconductor element and the drain of the first semiconductor element, and a measured value of the ON voltage in the voltage measurement unit, and determines whether the plurality of semiconductor elements are in a normal state or in an overheated state based on the measured value of the ON voltage and the received information indicating the magnitude of the ON current.

Abstract: Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. This power semiconductor device is provided with: a semiconductor element; an insulating substrate having an electrode layer to which the semiconductor element is bonded; an external wiring line which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion for external connection, said end portion being bent toward the upper surface; and a frame member which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions that protrude toward the semiconductor element.

Abstract: In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.

Abstract: In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.

Abstract: A power converter includes: a base conductor, an electrically heating member which is provided on the base conductor, a noise reduction capacitor of flat plate-shape in which via an insulator, a plurality of first electrodes and second electrodes are alternately layered, on one surface, the first electrode in an outermost layer is exposed and on another surface, the second electrode in an outermost layer is exposed, a relay conductor which is electrically connected to other members from the electrically heating member via the noise reduction capacitor, and the second electrode in an outermost layer of the noise reduction capacitor is face-joined to a face of the base conductor at a side where the electrically heating member is provided and the first electrode in an outermost layer and the relay conductor are face-joined.

Abstract: Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. This power semiconductor device is provided with: a semiconductor element; an insulating substrate having an electrode layer to which the semiconductor element is bonded; an external wiring line which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion for external connection, said end portion being bent toward the upper surface; and a frame member which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions that protrude toward the semiconductor element.

Abstract: A power converter includes: a base conductor, an electrically heating member which is provided on the base conductor, a noise reduction capacitor of flat plate-shape in which via an insulator, a plurality of first electrodes and second electrodes are alternately layered, on one surface, the first electrode in an outermost layer is exposed and on another surface, the second electrode in an outermost layer is exposed, a relay conductor which is electrically connected to other members from the electrically heating member via the noise reduction capacitor, and the second electrode in an outermost layer of the noise reduction capacitor is face-joined to a face of the base conductor at a side where the electrically heating member is provided and the first electrode in an outermost layer and the relay conductor are face-joined.

Abstract: A power converter has one set of two semiconductor switches performing switching actions, each of which is formed of an FET and a free wheel diode connected in anti-parallel to the FET, and a smoothing capacitor, and convers power by complementary switching actions of the FETs in the semiconductor switches. The power converter is provided with a current sensor that detects a direction of a current flowing through the semiconductor switches and a gate generation portion that skips ON signals of PWM gate signals of the semiconductor switches when the direction of the current flowing through the semiconductor switches is negative.

Abstract: Disclosed is a DC-DC power conversion apparatus (10) including two or more switching units (SU1, SU2) each of which further includes two semiconductor switching elements (Sa, Sb), and wherein each of the semiconductor switching elements (S1a, S1b, S2a, S2b) of each of the switching units are all connected in series, and which also includes an energy transition capacitor (C1) for conducting charging/discharging, and an inductor (L). The DC-DC power conversion apparatus (10) is also provided with a control unit that makes the semiconductor elements execute operations in four types of switching modes, according to the ratio (V2/V0) of the input/output voltages of the power conversion apparatus and the direction of the power transmission, and that also makes the elements carry out a current-discontinuing operation wherein the inductor current will become zero during switching operation, upon low load.

Abstract: A power semiconductor circuit device and a method for manufacturing the same, both of which are provided with: a base board on which at least a power semiconductor element is mounted; a resin which molds the base board and the power semiconductor element in a state where partial surfaces of the base board, including a base board surface opposite to a surface on which the power semiconductor element is mounted, are exposed; and a heat dissipating fin joined to the base board by a pressing force. A groove is formed in the base board at a portion to be joined to the heat dissipating fin, and the heat dissipating fin is joined by caulking to the groove.

Abstract: The invention provides a reactor to be built in a power converter. In the reactor, an induction component composed of a coil being a winding of a conductor wire, a core in which interior a magnetic path is formed and an insulation bobbin positioning and engaging a wire wound part of the coil is housed in a case to be soaked with a mold resin. Inner bottom face of the case has a plurality of surfaces having not less than two different heights letting the outside bottom of the case a reference surface, and the lower end face of the core is in contact with any of the case inner bottom surfaces excluding the lowest inner bottom surface. As a result, the reactor is suitable for on-vehicle applications to achieve reduced article variation as well as a longer service life, a shorter operation time and decreased cost.

Abstract: Disclosed is a DC-DC power conversion apparatus (10) including two or more switching units (SU1, SU2) each of which further includes two semiconductor switching elements (Sa, Sb), and wherein each of the semiconductor switching elements (S1a, S1b, S2a, S2b) of each of the switching units are all connected in series, and which also includes an energy transition capacitor (C1) for conducting charging/discharging, and an inductor (L). The DC-DC power conversion apparatus (10) is also provided with a control unit that makes the semiconductor elements execute operations in four types of switching modes, according to the ratio (V2/V0) of the input/output voltages of the power conversion apparatus and the direction of the power transmission, and that also makes the elements carry out a current-discontinuing operation wherein the inductor current will become zero during switching operation, upon low load.

Abstract: A power converter has one set of two semiconductor switches performing switching actions, each of which is formed of an FET and a free wheel diode connected in anti-parallel to the FET, and a smoothing capacitor, and convers power by complementary switching actions of the FETs in the semiconductor switches. The power converter is provided with a current sensor that detects a direction of a current flowing through the semiconductor switches and a gate generation portion that skips ON signals of PWM gate signals of the semiconductor switches when the direction of the current flowing through the semiconductor switches is negative.

Abstract: The invention provides a reactor to be built in a power converter. In the reactor, an induction component composed of a coil being a winding of a conductor wire, a core in which interior a magnetic path is formed and an insulation bobbin positioning and engaging a wire wound part of the coil is housed in a case to be soaked with a mold resin. Inner bottom face of the case has a plurality of surfaces having not less than two different heights letting the outside bottom of the case a reference surface, and the lower end face of the core is in contact with any of the case inner bottom surfaces excluding the lowest inner bottom surface. As a result, the reactor is suitable for on-vehicle applications to achieve reduced article variation as well as a longer service life, a shorter operation time and decreased cost.

Abstract: A power semiconductor circuit device and a method for manufacturing the same, both of which are provided with: a base board on which at least a power semiconductor element is mounted; a resin which molds the base board and the power semiconductor element in a state where partial surfaces of the base board, including a base board surface opposite to a surface on which the power semiconductor element is mounted, are exposed; and a heat dissipating fin joined to the base board by a pressing force. A groove is formed in the base board at a portion to be joined to the heat dissipating fin, and the heat dissipating fin is joined by caulking to the groove.

Abstract: For a voice guidance phrase, multiple voice data items having individually different voice ranges or frequencies are previously stored in a memory. A voice mixing unit chooses to mix three voice data items among the stored voice data items and thereby produces a mixed voice data item. A voice outputting unit converts the mixed voice data item into a voice and then vocalizes a voice guidance phrase via a speaker. A voice measuring unit measures a characteristic of a frequency, a volume, or a pronunciation speed with respect to a response voice responding to the outputted voice guidance phrase. A voice mixing unit produces a mixed voice data item having a characteristic similar to the measured characteristic and outputs it.