Abstract: A solid-state imaging device includes: a solid-state imaging element having a light-receiving area; a transparent member disposed so as to oppose the light-receiving area; a supporting member configured to support the transparent member; a first mark disposed at either an upper surface of the transparent member or an upper surface of the supporting member; and a second mark disposed at an outer side of the light-receiving area, at an upper surface of the solid-state imaging element.

Abstract: There is provided a reflective sheet made of self-sustaining porous sheet which comprises inert particles and a polyolefin and which has a porosity of 30 to 95% and a reflectivity at a wavelength of 550 nm of 60 to 120%. This reflective sheet can be reduced in thickness and weight while retaining sufficient reflectivity.

Abstract: In order to accurately detect an abnormal state of a rotation direction detection unit for detecting a rotation direction of a crank shaft, provided is an internal combustion engine control apparatus including: a rotation detection unit including the rotation direction detection unit for detecting the rotation direction of the crank shaft of an engine to output a rotation direction signal, and a rotation speed detection unit for outputting a pulse signal according to a rotation speed of the crank shaft; a stop position calculation unit for calculating, based on an output from the rotation detection unit, a stop position of the crank shaft when the engine stops; and an abnormal state detection unit for detecting the abnormal state of the rotation direction detection unit when an actual rotation direction of the crank shaft differs from the rotation direction of the crank shaft based on the rotation direction signal.

Abstract: A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

Abstract: A polymetaphenylene isophthalamide-based polymer porous film having a satisfactory porous structure that exhibits excellent gas permeability and heat resistance. It is produced by a process which comprises casting a dope of the polymetaphenylene isophthalamide-based polymer and coagulating it in a coagulating bath. The porous film may also contain inorganic whiskers, and a composite porous film may be formed in combination with a separate thermoplastic polymer film.

Abstract: In a case where fuel injection system abnormality is detected, and fuel supply stop processing is carried out against the abnormality, since a judgment is made using a misfire judgment, in a case where the misfire judgment is carried out in a periodic measurement system, the reliability is low at the time of a periodic variation or in a low rotation region, and in a case where it is carried out in an ion detection system, the cost increases, and the calculation load of an internal combustion engine control apparatus by the misfire judgment processing increases. A control apparatus for a vehicular internal combustion engine of the invention includes an injector drive abnormality judgment unit to judge, based on an injector drive confirmation signal, drive abnormality of an injector corresponding to the injector drive confirmation signal, and the injector drive abnormality judgment unit judges abnormality of the injector drive confirmation signal based on a state of the injector drive confirmation signal.

Abstract: A semiconductor device includes a semiconductor element having a plurality of electrodes provided on one principal surface thereof and a wiring substrate having a conductive layer on an insulating substrate. The wiring substrate is arranged in a substantially U-shape along an outer edge of the semiconductor element. An end of the conductive layer of the wiring substrate is connected to the electrodes of the semiconductor element. The other end of the conductive layer extends in a direction opposite to the semiconductor element on the other principal surface side of the semiconductor element.

Abstract: In a case where fuel injection system abnormality is detected, and fuel supply stop processing is carried out against the abnormality, since a judgment is made using a misfire judgment, in a case where the misfire judgment is carried out in a periodic measurement system, the reliability is low at the time of a periodic variation or in a low rotation region, and in a case where it is carried out in an ion detection system, the cost increases, and the calculation load of an internal combustion engine control apparatus by the misfire judgment processing increases. A control apparatus for a vehicular internal combustion engine of the invention includes an injector drive abnormality judgment unit to judge, based on an injector drive confirmation signal, drive abnormality of an injector corresponding to the injector drive confirmation signal, and the injector drive abnormality judgment unit judges abnormality of the injector drive confirmation signal based on a state of the injector drive confirmation signal.

Abstract: A surface treatment agent is applied onto a metal film of a printed circuit board to form a rust preventive film. The surface treatment agent for metal comprises an aqueous solution comprising an organic acid having a boiling point of 170° C. or higher and one or more compound selected from the group consisting of an imidazole based compound and a benzimidazole based compound.

Abstract: A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor element having a plurality of electrodes provided on one principal surface thereof and a wiring substrate having a conductive layer on an insulating substrate. The wiring substrate is arranged in a substantially U-shape along an outer edge of the semiconductor element. An end of the conductive layer of the wiring substrate is connected to the electrodes of the semiconductor element. The other end of the conductive layer extends in a direction opposite to the semiconductor element on the other principal surface side of the semiconductor element.

Abstract: A polymetaphenylene isophtha lamide-based polymer porous film having a satisfactory porous structure that exhibits excellent gas permeability and heat resistance. It is produced by a process which comprises casting a dope of the polymetaphenylene isophthalamide-based polymer and coagulating it in a coagulating bath. The porous film may also contain inorganic whiskers, and a composite porous film may be formed in combination with a separate thermoplastic polymer film.

Abstract: There is provided a chamber open to the outside through openings through which a solder-adhered object is passed and the chamber having a heating/melting area, a carrying mechanism for carrying the solder-adhered object into the heating/melting area, a formic-acid supplying means for supplying a formic acid into the heating/melting area, an exhausting means for exhausting a gas from the heating/melting area and its neighboring area to create a lower pressure area in the heating/melting area as compared to the pressure of outside the chamber, heating means for heating directly or indirectly the solder-adhered object in the heating/melting area, and an air-stream suppressing means for disturbing a gas flow between the heating/melting area and the carrying areas.

Abstract: A semiconductor device is manufactured by an integrated circuit forming process, and a series of subsequent steps. In the series of steps, a protection tape 18 is adhered onto a first surface of a semiconductor substrate on which a plurality of semiconductor elements are formed, and the second surface of the semiconductor substrate is ground so that the semiconductor substrate has a desired thickness, the semiconductor substrate is then conveyed while controlling the temperature of the semiconductor substrate. The semiconductor substrate is then separated into a plurality of semiconductor elements. The occurrence of warping on the semiconductor substrate during conveyance of the semiconductor substrate is thus prevented.

Abstract: A semiconductor device is manufactured by an integrated circuit forming process, and a series of subsequent steps. In the series of steps, a protection tape 18 is adhered onto a first surface of a semiconductor substrate on which a plurality of semiconductor elements are formed, and the second surface of the semiconductor substrate is ground so that the semiconductor substrate has a desired thickness, the semiconductor substrate is then conveyed while controlling the temperature of the semiconductor substrate. The semiconductor substrate is then separated into a plurality of semiconductor elements. The occurrence of warping on the semiconductor substrate during conveyance of the semiconductor substrate is thus prevented.

Abstract: A silicon wafer has a first surface having a plurality of semiconductor elements and a second surface opposite to the first surface. The second surface of the silicon wafer is partially removed, by grinding or etching, to form a center portion and a peripheral portion having thickness greater than a thickness of the center portion. The silicon wafer is then separated into the plurality of semiconductor elements.

Abstract: There is provided an active energy beam curable composition, which is useful for forming a solder resist film for a printed wiring board, which can be developed through an ultraviolet exposure and a dilute alkali aqueous solution, and is excel lent in heat resistance, adhesivity and chemical resistance. There is also proposed a printed wiring board provided with a cured film of such an active energy beam curable composition. This composition is featured in that it comprises not only an active energy beam curable vinyl copolymer modified resin wherein an epoxy compound having an ethylenic unsaturated group is added to a copolymer comprising styrene, (metha)acrylic acid, and, as an optional component, (metha)acrylate; but also an active energy beam curable bisphenol type epoxyacrylate resin.

Abstract: There are provided a chamber having openings which are opened to an outer air and through which a solder-adhered object w is passed and having a heating/melting area and carrying areas arranged adjacent to the heating/melting area, a carrying mechanism for carrying the solder-adhered object w into the heating/melting area, a formic-acid supplying means for supplying a formic acid into the heating/melting area, an exhausting means for exhausting a gas from the heating/melting area and its neighboring area to lower a pressure in the heating/melting area rather than an outer air, heating means for heating directly or indirectly the solder-adhered object w in the heating/melting area, and air-stream suppressing means for disturbing a gas flow between the heating/melting area and the carrying areas.

Abstract: There is provided an active energy beam curable composition, which is useful for forming a solder resist film for a printed wiring board, which can be developed through an ultraviolet exposure and a dilute alkali aqueous solution, and is excellent in heat resistance, adhesivity and chemical resistance. There is also proposed a printed wiring board provided with a cured film of such an active energy beam curable composition. This composition is featured in that it comprises not only an active energy beam curable vinyl copolymer modified resin wherein an epoxy compound having an ethylenic unsaturated group is added to a copolymer comprising styrene, (metha)acrylic acid, and, as an optional component, (metha)acrylate; but also an active energy beam curable bisphenol type epoxyacrylate resin.

Abstract: An apparatus and a process for producing a laminate for electronic parts such as ceramic capacitors. After a predetermined pattern for forming an internal conductive layer is formed on a self-supporting green sheet which contains inorganic powder and an organic binder, the self-supporting green sheet is taken up by a columnar roll and laminated. At this point, the position of the same pattern on the green sheet G2 of the next cycle to be laminated adjacently onto the green sheet G1 of the previous cycle as the above pattern with respect to the predetermined pattern on the green sheet G1 taken up by the columnar roll is determined.