Abstract: A flow path member may include silicon nitride ceramics. The flow path member may have an inlet port, an outlet port, and a flow path connected to the inlet port and the outlet port inside the flow path member. A plurality of needle-shaped crystals may be arranged on a surface of the flow path where the needle-shaped crystals intersect each other.

Abstract: A flow path member may include silicon nitride ceramics. The flow path member may have an inlet port, an outlet port, and a flow path connected to the inlet port and the outlet port inside the flow path member. A plurality of needle-shaped crystals may be arranged on a surface of the flow path where the needle-shaped crystals intersect each other.

Abstract: In an inter-vehicle distance control apparatus and an inter-vehicle distance control method, object detection information is obtained from a detection portion that detects a first preceding vehicle ahead of a vehicle, and an object ahead of the first preceding vehicle; a first possible target stop position is calculated taking into account the first preceding vehicle, and a second possible target stop position is calculated taking into account the object, based on the object detection information; and a target stop position for the vehicle is set to one of the first possible target stop position and the second possible target stop position, which is closer to the vehicle than the other of the first possible target stop position and the second possible target stop position is.

Abstract: In an inter-vehicle distance control apparatus and an inter-vehicle distance control method, object detection information is obtained from a detection portion that detects a first preceding vehicle ahead of a vehicle, and an object ahead of the first preceding vehicle; a first possible target stop position is calculated taking into account the first preceding vehicle, and a second possible target stop position is calculated taking into account the object, based on the object detection information; and a target stop position for the vehicle is set to one of the first possible target stop position and the second possible target stop position, which is closer to the vehicle than the other of the first possible target stop position and the second possible target stop position is.

Abstract: In the production of a ceramic substrate (1) with a level difference (3), a surface of a fired substrate obtained by firing of a ceramic green sheet is honed to form the level difference (3). Alternatively, a level difference is first formed through processing of a ceramic green sheet, laminating of a ceramic green sheet, or the like, and thereafter the ceramic green sheet is fired to obtain a fired substrate (ceramic substrate) (1) with a level difference (3).

Abstract: A substrate for optical semiconductors of the present invention comprises an insulating ceramic substrate, a metal layer provided on the insulating ceramic substrate, a solder layer provided on the metal layer and composed of Sn only or 50 wt % or more of Sn and the balance substantially of Au, and a protective layer provided on the solder layer and composed of Au or Ag having a thickness of 0.01 ?m or more and 1 ?m or less. The substrate for optical semiconductors as described above makes it possible to reduce stress placed on the optical semiconductor, to suppress development of crystal defects, and to prolong its life when joining the optical semiconductor easily developing crystal defects by slight stress or when in use thereafter.

Abstract: A substrate for optical semiconductors of the present invention comprises an insulating ceramic substrate, a metal layer provided on the insulating ceramic substrate, a solder layer provided on the metal layer and composed of Sn only or 50 wt % or more of Sn and the balance substantially of Au, and a protective layer provided on the solder layer and composed of Au or Ag having a thickness of 0.01 ?m or more and 1 ?m or less. The substrate for optical semiconductors as described above makes it possible to reduce stress placed on the optical semiconductor, to suppress development of crystal defects, and to prolong its life when joining the optical semiconductor easily developing crystal defects by slight stress or when in use thereafter.

Abstract: An aluminum nitride substrate includes an aluminum nitride sintered body containing a rare earth oxide as a sintering additive component. In the aluminum nitride substrate, a surface thereof is machined so that arithmetic average roughness Ra is 0.5 &mgr;m or less; an aggregate size of the sintering additive component present on the machined surface is 20 &mgr;m or less; and a total aggregate area in a unit area of the machined surface is 5% or less. A metal thin film is deposited on such machined surface with good intimate contact properties, and furthermore deposition accuracy or the like is improved.

Abstract: An aluminum nitride substrate includes an aluminum nitride sintered body containing a rare earth oxide as a sintering additive component. In the aluminum nitride substrate, a surface thereof is machined so that arithmetic average roughness Ra is 0.5 &mgr;m or less; an aggregate size of the sintering additive component present on the machined surface is 20 &mgr;m or less; and a total aggregate area in a unit area of the machined surface is 5% or less. A metal thin film is deposited on such machined surface with good intimate contact properties, and furthermore deposition accuracy or the like is improved.

Abstract: The aluminum nitride sintered body according to the present invention comprises 1-10 % by weight of at least one element selected from a group consisting of a group IIIa element listed in periodic table, Ca, Sr and Ba in terms of the amount of an oxide thereof, 0.2-2.0 % by weight of boron carbide, at most 0.2 % by weight of at least one silicon compound selected from a group consisting of SiO.sub.2, Si.sub.3 N.sub.4, SiC, Si.sub.2 N.sub.2 O,.beta.-Sialon, .alpha.-Sialon and poly-type aluminum nitride (Al--Si--O--N) in terms of the amount of Si component, and the balance of aluminum nitride.

Abstract: An aluminum nitride sintered body containing 1 to 10% by weight of an oxide of at least one element selected from a group consisting of a group IIIa element, Ca, Sr and Ba, the concentration of a Si component in the sintered body is 0.01 to 0.2% by weight and three-point bending strength is 490 MPa or more. The sintered body is characterized in that a crystal structure composed of aluminum nitride crystal grains is formed, the fracture toughness is 2.8 MN/m.sup.3/2 or more, the three-point bending strength is 490 MPa or more and the thermal conductivity is 150 W/m.multidot.k or more. In the crystal structure, the distribution of the crystal grain distribution is adequately adjusted. The growth of the AlN sintered body is restricted, thus the structure of the sintered body is fined, and the distribution of the crystal grain size is controlled adequately so that the strength and the fracture toughness of the sintered body are improved.

Abstract: A system for driving and controlling an open-area shield such as a window frame or door includes an open-area frame member having an opening; an open-area shielding member defining an open area together with the open-area frame member and made movable for shielding the open area; drive means for driving the open-area shielding member; closing drive instructing means for producing a closing drive instruction to drive the open-area shielding member in a direction to reduce the open area; a detection electrode disposed in at least one portion of the substantial peripheral edge of the open area; electrostatic capacity detecting means for detecting the electrostatic capacity of the detection electrode; obstruction setting means for setting the presence of an obstruction in the open area in accordance with the electrostatic capacity detected by the electrostatic capacity detecting means; and energization control means for energizing the drive means to close the same in response to the closing drive instruction of t

Abstract: A person detecting device detects the presence and absence of a person in a certain space such as a vehicle compartment. The device includes means for sensing the capacitance between a pair of electrodes with a space where a person may present, oscillating means for providing a first pulse signal and means for delaying the first pulse signal and providing a second pulse signal delayed in response to the capacitance. The device further includes means for receiving the first and second pulse signals and providing a third pulse signal of a duty ratio determined in response to the capacitance. The third pulse signal is further converted to a value representing the duty ratio which is compared with at least a reference value preset for judging as to the presence and absence of the person.