Patents by Inventor Takashi Dokan
Takashi Dokan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105478Abstract: A substrate processing system comprises a substrate processing apparatus, a vacuum transport chamber, a transport mechanism, a suction mechanism and a controller. The substrate processing apparatus includes a vacuum processing chamber configured to perform processing of a substrate. The vacuum transport chamber is connected to the vacuum processing chamber and includes a transport port communicating with the vacuum processing chamber. The transport mechanism is disposed inside the vacuum transport chamber and configured to transport at least the substrate via the transport port. The suction mechanism is disposed inside the vacuum transport chamber and configured to suck an adhered object of a part inside the vacuum processing chamber via the transport port. The controller is configured to control the transport mechanism and the suction mechanism.Type: ApplicationFiled: November 24, 2023Publication date: March 28, 2024Applicant: Tokyo Electron LimitedInventor: Takashi DOKAN
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Patent number: 11871503Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.Type: GrantFiled: February 4, 2022Date of Patent: January 9, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Dokan, Shinji Kubota, Chishio Koshimizu
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Publication number: 20230377843Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Taichi HIRANO, Toru HAYASAKA, Shinji KUBOTA, Koji MARUYAMA, Takashi DOKAN
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Publication number: 20230330715Abstract: There is provided a maintenance device comprising: a case having an opening whose size corresponds to a second gate of a vacuum processing device disposed in a processing chamber having a first gate and the second gate different from the first gate, the first gate and the second gate being used for loading and unloading substrates, the opening being capable of being attached to the second gate in a detachable manner and an airtight manner; a depressurization mechanism configured to reduce a pressure in the case; and a suction mechanism disposed in the case and configured to enter the processing chamber through the opening and conduct suction of deposits on an object in the processing chamber.Type: ApplicationFiled: June 23, 2023Publication date: October 19, 2023Applicant: Tokyo Electron LimitedInventor: Takashi DOKAN
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Patent number: 11764082Abstract: A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.Type: GrantFiled: July 17, 2019Date of Patent: September 19, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Shinji Kubota, Koji Maruyama, Takashi Dokan, Koichi Nagami
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Patent number: 11742181Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: GrantFiled: June 28, 2021Date of Patent: August 29, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Taichi Hirano, Toru Hayasaka, Shinji Kubota, Koji Maruyama, Takashi Dokan
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Patent number: 11742182Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: GrantFiled: March 22, 2022Date of Patent: August 29, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Taichi Hirano, Toru Hayasaka, Shinji Kubota, Koji Maruyama, Takashi Dokan
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Patent number: 11476089Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: GrantFiled: September 10, 2020Date of Patent: October 18, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Taichi Hirano, Toru Hayasaka, Shinji Kubota, Koji Maruyama, Takashi Dokan
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Publication number: 20220216036Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: ApplicationFiled: March 22, 2022Publication date: July 7, 2022Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Taichi HIRANO, Toru HAYASAKA, Shinji KUBOTA, Koji MARUYAMA, Takashi DOKAN
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Publication number: 20220159820Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.Type: ApplicationFiled: February 4, 2022Publication date: May 19, 2022Applicant: Tokyo Electron LimitedInventors: Takashi DOKAN, Shinji KUBOTA, Chishio KOSHIMIZU
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Patent number: 11337297Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.Type: GrantFiled: June 10, 2019Date of Patent: May 17, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Dokan, Shinji Kubota, Chishio Koshimizu
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Patent number: 11282701Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the chamber in a second period which is after the first period or following the first period. The first plasma processing and the second plasma processing are performed in a state where a substrate is disposed on a substrate support stage provided in the processing chamber. A sequence including the first plasma processing and the second plasma processing is performed a plurality of times.Type: GrantFiled: October 11, 2019Date of Patent: March 22, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Dokan, Shinji Kubota
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Publication number: 20220028665Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.Type: ApplicationFiled: October 7, 2021Publication date: January 27, 2022Inventors: Koichi Nagami, Kazunobu Fujiwara, Tatsuro Ohshita, Takashi Dokan, Koji Maruyama, Kazuya Nagaseki, Shinji Himori
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Patent number: 11170979Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.Type: GrantFiled: December 20, 2019Date of Patent: November 9, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Koichi Nagami, Kazunobu Fujiwara, Tatsuro Ohshita, Takashi Dokan, Koji Maruyama, Kazuya Nagaseki, Shinji Himori
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Publication number: 20210327681Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: ApplicationFiled: June 28, 2021Publication date: October 21, 2021Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Taichi HIRANO, Toru HAYASAKA, Shinji KUBOTA, Koji MARUYAMA, Takashi DOKAN
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Patent number: 11087960Abstract: A radio frequency power source according to an exemplary embodiment includes a power generator configured to generate radio frequency power. The radio frequency power includes a plurality of power components. The plurality of power components respectively have a plurality of frequencies set symmetrically with respect to a fundamental frequency at an interval of a predetermined frequency. The envelope of the radio frequency power has peaks that periodically appear at a time interval defined by the predetermined frequency or a frequency that is a multiple of twice or more the predetermined frequency. The power level of the radio frequency power is set to be zero in a period excluding a period between a zero-cross region of the envelope immediately before a point in time of appearance of each of the peaks and a zero-cross region of the envelope immediately after the point in time of the appearance.Type: GrantFiled: January 27, 2020Date of Patent: August 10, 2021Assignee: Tokyo Electron LimitedInventors: Shinji Kubota, Takashi Dokan
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Patent number: 11017985Abstract: In a plasma processing apparatus according to an embodiment, a first radio-frequency power supply is connected to a lower electrode of a substrate support provided within a chamber via a first matcher. The first radio-frequency power supply supplies first radio-frequency power for bias to the lower electrode. The second radio-frequency power supply is connected to a load via a second matcher. The second radio-frequency power supply supplies second radio-frequency power for plasma generation. A controller of the second matcher sets an impedance of a matching circuit of the second matcher such that a reflection from the load of the second radio-frequency power supply is reduced in a designated partial period within each cycle of the first radio-frequency power.Type: GrantFiled: December 18, 2019Date of Patent: May 25, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Takashi Dokan, Shinji Kubota
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Publication number: 20210051792Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.Type: ApplicationFiled: June 10, 2019Publication date: February 18, 2021Applicant: Tokyo Electron LimitedInventors: Takashi DOKAN, Shinji KUBOTA, Chishio KOSHIMIZU
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Publication number: 20210043472Abstract: A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.Type: ApplicationFiled: July 17, 2019Publication date: February 11, 2021Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Shinji KUBOTA, Koji MARUYAMA, Takashi DOKAN, Koichi NAGAMI
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Publication number: 20200411286Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: ApplicationFiled: September 10, 2020Publication date: December 31, 2020Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Taichi HIRANO, Toru HAYASAKA, Shinji KUBOTA, Koji MARUYAMA, Takashi DOKAN