Abstract: The present invention relates to [1] an external skin preparation containing a tabular metal oxide (A) having a thickness of 30 to 360 nm and an aspect ratio of 50 to 300, and a UV absorbent (B) in a ratio [(A)/(B)] by mass of 0.1 to 5; [2] an external skin reparation containing the tabular metal oxide (A), a UV scattering agent (C) and a nonvolatile oil (D) in a ratio [(A)/(C)] by mass of 0.1 to 18; and [3] a method for protecting skin from IR rays and UV rays by applying the external skin preparation to skin.

Abstract: Provided is a dielectric ceramic composition comprising a main component of forsterite and calcium strontium titanate. A content ratio of forsterite in the main component is from 84.0 to 92.5 parts by mole, and a content ratio of calcium strontium titanate is from 7.5 to 16.0 parts by mole. (Sr+Ca)/Ti in the calcium strontium titanate is from 1.03 to 1.20 in terms of a molar ratio. With respect to a total of 100 parts by mass of the main component and a subcomponent except for Li-containing glass, from 2 to 10 parts by mass of Li-containing glass is added. The Li-containing glass includes Al2O3 in an amount of from 1% by mass to 10% by mass.

Abstract: Provided is a more versatile black marker composition which achieves excellent adhesion between a mark and an electronic component element body and excellent contrast of a mark regardless of the composition of the electronic component element body, the black marker composition containing borosilicate glass and a black oxide, in which a crystallization temperature of the borosilicate glass is less than 910° C., and an amount of Zn in terms of ZnO is 0.05% by mass or less based on 100% by mass of an inorganic solid content in terms of an oxide contained in the black marker composition.

Abstract: Provided is a more versatile black marker composition which achieves excellent adhesion between a mark and an electronic component element body and excellent contrast of a mark regardless of the composition of the electronic component element body, the black marker composition containing borosilicate glass and a black oxide, in which a crystallization temperature of the borosilicate glass is less than 910° C., and an amount of Zn in terms of ZnO is 0.05% by mass or less based on 100% by mass of an inorganic solid content in terms of an oxide contained in the black marker composition.

Abstract: A mirror with display device includes a transparent planar material; and a display device. The transparent planar material has a metallic thin film. A light-shielding part is formed in the transparent planar material so that the transparent planar material has a translucent part. A display part of the display device for displaying an image is bonded to the translucent part via an adhesive layer.

Abstract: Provided are a medium conveying device and an inkjet printer that can convey a medium stably. In a case where a paper P is conveyed along a plane in a conveying unit 40, a posture of the paper P is corrected by a posture correction unit 20, and then the paper P is delivered to the conveying unit 40 by a delivery unit 30. The delivery unit 30 holds a leading end portion of the paper P of which the posture is corrected by the posture correction unit 2 with a paper holding bar 31, and delivers the paper P to the conveying unit 40 by moving the paper holding bar 31 linearly along a conveying direction of the paper P by the conveying unit 40.

Abstract: A dielectric ceramic composition includes: Mg2SiO4 as main component; R-containing, Cu-containing, and B-containing compounds, and Li-containing glass, as sub-component. R is an alkaline earth metal. R-containing compound greater than or equal to 0.2 part by mass and less than or equal to 4.0 parts by mass, contained in terms of oxide, Cu-containing compound of greater than or equal to 0.5 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, and B-containing compound greater than or equal to 0.2 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, to 100 parts by mass of main component. Li-containing glass of greater than or equal to 2 parts by mass and less than or equal to 10 parts by mass contained to total a 100 parts by mass of main component, and sub-component excluding Li-containing glass.

Abstract: The present invention provides a skin cosmetic containing the following components (A), (B), (C), (D), (E), and (F): (A) 0.5 to 6 mass % of a linear saturated fatty acid having 12 to 22 of carbon atom, (B) 0.010 to 5 mass % of an organic base, (C) 0.010 to 1 mass % of an inorganic base, (D) 0.5 to 6 mass % of a linear saturated alcohol having 12 to 22 of carbon atom, (E) 0.05 to 9 mass % of a powder, and (F) water, wherein the component (D) comprises at least a linear saturated alcohol having 12 to 20 of carbon atom, and the mass ratio of the component (E) to the total amount of the components (A) and (D) [(A)+(D)] is (E)/[(A)+(D)]=from 0.01 to 5.

Abstract: The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (?110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction.

Abstract: The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.

Abstract: A dielectric ceramic composition includes: Mg2SiO4 as main component; R-containing, Cu-containing, and B-containing compounds, and Li-containing glass, as sub-component. R is an alkali earth metal. R-containing compound greater than or equal to 0.2 part by mass and less than or equal to 4.0 parts by mass, contained in terms of oxide, Cu-containing compound of greater than or equal to 0.5 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, and B-containing compound greater than or equal to 0.2 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, to 100 parts by mass of main component. Li-containing glass of greater than or equal to 2 parts by mass and less than or equal to 10 parts by mass contained to total a 100 parts by mass of main component, and sub-component excluding Li-containing glass.

Abstract: The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.

Abstract: A mirror with display device includes a transparent planar material; and a display device. The transparent planar material has a metallic thin film. A light-shielding part is formed in the transparent planar material so that the transparent planar material has a translucent part. A display part of the display device for displaying an image is bonded to the translucent part via an adhesive layer.

Abstract: A transmission line is provided with a line portion with a first relative permittivity which is composed of a first dielectric and a conductor filler dispersed in the first dielectric, and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the surrounding dielectric portion exists around the line portion in a cross section perpendicular to a direction in which electromagnetic waves transmit in the line portion, the first relative permittivity is 600 or more, and the second relative permittivity is smaller than the first relative permittivity. An electronic component has the transmission line. Further, an electronic component is provided with a resonator having a resonant frequency ranging from 1 GHz to 10 GHz, wherein, the resonator is formed by using the transmission line.

Abstract: A transmission line and an electronic component including a resonator using the transmission line are provided. The transmission line is capable of transmitting electromagnetic waves of at least one frequency ranging from 1 GHz to 10 GHz and is composed of a first dielectric with a first relative permittivity and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the first dielectric is represented by a formula of {XBaO.(1?X)SrO}TiO2 (0.25<X?0.55), and the second relative permittivity is smaller than the first relative permittivity.

Abstract: A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. Alternatively, the tunnel field-effect transistor is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting n-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. The nano wire is configured from a first region and a second region. For instance, the first region is intermittently doped with a p-type dopant, and the second region is doped with an n-type dopant.

Abstract: The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (?110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction.

Abstract: The present invention provides a skin cosmetic containing the following components (A), (B), (C), (D), (E), and (F): (A) 0.5 to 6 mass % of a linear saturated fatty acid having 12 to 22 of carbon atom, (B) 0.010 to 5 mass % of an organic base, (C) 0.010 to 1 mass % of an inorganic base, (D) 0.5 to 6 mass % of a linear saturated alcohol having 12 to 22 of carbon atom, (E) 0.05 to 9 mass % of a powder, and (F) water, wherein the component (D) comprises at least a linear saturated alcohol having 12 to 20 of carbon atom, and the mass ratio of the component (E) to the total amount of the components (A) and (D) [(A)+(D)] is (E)/[(A)+(D)]=from 0.01 to 5.

Abstract: A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. Alternatively, the tunnel field-effect transistor is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting n-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. The nano wire is configured from a first region and a second region. For instance, the first region is intermittently doped with a p-type dopant, and the second region is doped with an n-type dopant.

Abstract: A transmission line is provided with a line portion with a first relative permittivity which is composed of a first dielectric and a conductor filler dispersed in the first dielectric, and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the surrounding dielectric portion exists around the line portion in a cross section perpendicular to a direction in which electromagnetic waves transmit in the line portion, the first relative permittivity is 600 or more, and the second relative permittivity is smaller than the first relative permittivity. An electronic component has the transmission line. Further, an electronic component is provided with a resonator having a resonant frequency ranging from 1 GHz to 10 GHz, wherein, the resonator is formed by using the transmission line.