Patents by Inventor Takashi Fukui

Takashi Fukui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220054376
    Abstract: The present invention relates to [1] an external skin preparation containing a tabular metal oxide (A) having a thickness of 30 to 360 nm and an aspect ratio of 50 to 300, and a UV absorbent (B) in a ratio [(A)/(B)] by mass of 0.1 to 5; [2] an external skin reparation containing the tabular metal oxide (A), a UV scattering agent (C) and a nonvolatile oil (D) in a ratio [(A)/(C)] by mass of 0.1 to 18; and [3] a method for protecting skin from IR rays and UV rays by applying the external skin preparation to skin.
    Type: Application
    Filed: December 27, 2019
    Publication date: February 24, 2022
    Applicant: KAO CORPORATION
    Inventors: Takashi FUKUI, Noriko TEJIMA
  • Publication number: 20210300825
    Abstract: Provided is a dielectric ceramic composition comprising a main component of forsterite and calcium strontium titanate. A content ratio of forsterite in the main component is from 84.0 to 92.5 parts by mole, and a content ratio of calcium strontium titanate is from 7.5 to 16.0 parts by mole. (Sr+Ca)/Ti in the calcium strontium titanate is from 1.03 to 1.20 in terms of a molar ratio. With respect to a total of 100 parts by mass of the main component and a subcomponent except for Li-containing glass, from 2 to 10 parts by mass of Li-containing glass is added. The Li-containing glass includes Al2O3 in an amount of from 1% by mass to 10% by mass.
    Type: Application
    Filed: March 25, 2021
    Publication date: September 30, 2021
    Applicant: TDK CORPORATION
    Inventors: Takashi FUKUI, Masanori ABE, Kazunari KIMURA, Kazusa OHSUGI, Fuga SATO
  • Patent number: 11118076
    Abstract: Provided is a more versatile black marker composition which achieves excellent adhesion between a mark and an electronic component element body and excellent contrast of a mark regardless of the composition of the electronic component element body, the black marker composition containing borosilicate glass and a black oxide, in which a crystallization temperature of the borosilicate glass is less than 910° C., and an amount of Zn in terms of ZnO is 0.05% by mass or less based on 100% by mass of an inorganic solid content in terms of an oxide contained in the black marker composition.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: September 14, 2021
    Assignee: TDK CORPORATION
    Inventors: Takashi Fukui, Osamu Hirose, Masanori Abe, Kazunari Kimura, Hisashi Kobuke
  • Publication number: 20200308429
    Abstract: Provided is a more versatile black marker composition which achieves excellent adhesion between a mark and an electronic component element body and excellent contrast of a mark regardless of the composition of the electronic component element body, the black marker composition containing borosilicate glass and a black oxide, in which a crystallization temperature of the borosilicate glass is less than 910° C., and an amount of Zn in terms of ZnO is 0.05% by mass or less based on 100% by mass of an inorganic solid content in terms of an oxide contained in the black marker composition.
    Type: Application
    Filed: March 26, 2020
    Publication date: October 1, 2020
    Applicant: TDK CORPORATION
    Inventors: Takashi FUKUI, Osamu HIROSE, Masanori ABE, Kazunari KIMURA, Hisashi KOBUKE
  • Patent number: 10775536
    Abstract: A mirror with display device includes a transparent planar material; and a display device. The transparent planar material has a metallic thin film. A light-shielding part is formed in the transparent planar material so that the transparent planar material has a translucent part. A display part of the display device for displaying an image is bonded to the translucent part via an adhesive layer.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: September 15, 2020
    Assignee: AGC Inc.
    Inventors: Takashi Fukui, Ryuichi Shiraishi, Takahiko Akiyama
  • Publication number: 20200276836
    Abstract: Provided are a medium conveying device and an inkjet printer that can convey a medium stably. In a case where a paper P is conveyed along a plane in a conveying unit 40, a posture of the paper P is corrected by a posture correction unit 20, and then the paper P is delivered to the conveying unit 40 by a delivery unit 30. The delivery unit 30 holds a leading end portion of the paper P of which the posture is corrected by the posture correction unit 2 with a paper holding bar 31, and delivers the paper P to the conveying unit 40 by moving the paper holding bar 31 linearly along a conveying direction of the paper P by the conveying unit 40.
    Type: Application
    Filed: May 20, 2020
    Publication date: September 3, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Jun YAMANOBE, Takashi FUKUI, Koji FURUKAWA
  • Patent number: 10669207
    Abstract: A dielectric ceramic composition includes: Mg2SiO4 as main component; R-containing, Cu-containing, and B-containing compounds, and Li-containing glass, as sub-component. R is an alkaline earth metal. R-containing compound greater than or equal to 0.2 part by mass and less than or equal to 4.0 parts by mass, contained in terms of oxide, Cu-containing compound of greater than or equal to 0.5 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, and B-containing compound greater than or equal to 0.2 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, to 100 parts by mass of main component. Li-containing glass of greater than or equal to 2 parts by mass and less than or equal to 10 parts by mass contained to total a 100 parts by mass of main component, and sub-component excluding Li-containing glass.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: June 2, 2020
    Assignee: TDK CORPORATION
    Inventors: Takashi Fukui, Hisashi Kobuke, Atsushi Ishimoto, Masanori Abe
  • Patent number: 10568824
    Abstract: The present invention provides a skin cosmetic containing the following components (A), (B), (C), (D), (E), and (F): (A) 0.5 to 6 mass % of a linear saturated fatty acid having 12 to 22 of carbon atom, (B) 0.010 to 5 mass % of an organic base, (C) 0.010 to 1 mass % of an inorganic base, (D) 0.5 to 6 mass % of a linear saturated alcohol having 12 to 22 of carbon atom, (E) 0.05 to 9 mass % of a powder, and (F) water, wherein the component (D) comprises at least a linear saturated alcohol having 12 to 20 of carbon atom, and the mass ratio of the component (E) to the total amount of the components (A) and (D) [(A)+(D)] is (E)/[(A)+(D)]=from 0.01 to 5.
    Type: Grant
    Filed: April 10, 2015
    Date of Patent: February 25, 2020
    Assignee: Kao Corporation
    Inventors: Chihiro Ueyama, Tomokazu Yoshida, Takashi Fukui, Masanori Orita
  • Patent number: 10403498
    Abstract: The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (?110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: September 3, 2019
    Assignees: NATIONAL UNIVERSITY CORPORATION HAKKAIDO UNIVERSITY, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Takashi Fukui, Katsuhiro Tomioka
  • Patent number: 10381489
    Abstract: The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: August 13, 2019
    Assignees: National University Corporation Hokkaido University, Japan Science and Technology Agency
    Inventors: Takashi Fukui, Katsuhiro Tomioka
  • Publication number: 20190092692
    Abstract: A dielectric ceramic composition includes: Mg2SiO4 as main component; R-containing, Cu-containing, and B-containing compounds, and Li-containing glass, as sub-component. R is an alkali earth metal. R-containing compound greater than or equal to 0.2 part by mass and less than or equal to 4.0 parts by mass, contained in terms of oxide, Cu-containing compound of greater than or equal to 0.5 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, and B-containing compound greater than or equal to 0.2 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, to 100 parts by mass of main component. Li-containing glass of greater than or equal to 2 parts by mass and less than or equal to 10 parts by mass contained to total a 100 parts by mass of main component, and sub-component excluding Li-containing glass.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 28, 2019
    Applicant: TDK CORPORATION
    Inventors: Takashi FUKUI, Hisashi KOBUKE, Atsushi ISHIMOTO, Masanori ABE
  • Publication number: 20180294362
    Abstract: The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
    Type: Application
    Filed: September 27, 2016
    Publication date: October 11, 2018
    Inventors: Takashi FUKUI, Katsuhiro TOMIOKA
  • Publication number: 20180011229
    Abstract: A mirror with display device includes a transparent planar material; and a display device. The transparent planar material has a metallic thin film. A light-shielding part is formed in the transparent planar material so that the transparent planar material has a translucent part. A display part of the display device for displaying an image is bonded to the translucent part via an adhesive layer.
    Type: Application
    Filed: September 22, 2017
    Publication date: January 11, 2018
    Applicant: Asahi Glass Company, Limited
    Inventors: Takashi FUKUI, Ryuichi Shiraishi, Takahiko Akiyama
  • Patent number: 9698464
    Abstract: A transmission line is provided with a line portion with a first relative permittivity which is composed of a first dielectric and a conductor filler dispersed in the first dielectric, and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the surrounding dielectric portion exists around the line portion in a cross section perpendicular to a direction in which electromagnetic waves transmit in the line portion, the first relative permittivity is 600 or more, and the second relative permittivity is smaller than the first relative permittivity. An electronic component has the transmission line. Further, an electronic component is provided with a resonator having a resonant frequency ranging from 1 GHz to 10 GHz, wherein, the resonator is formed by using the transmission line.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: July 4, 2017
    Assignee: TDK CORPORATION
    Inventors: Takashi Fukui, Kiyoshi Hatanaka, Toshio Sakurai, Shigemitsu Tomaki
  • Patent number: 9647316
    Abstract: A transmission line and an electronic component including a resonator using the transmission line are provided. The transmission line is capable of transmitting electromagnetic waves of at least one frequency ranging from 1 GHz to 10 GHz and is composed of a first dielectric with a first relative permittivity and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the first dielectric is represented by a formula of {XBaO.(1?X)SrO}TiO2 (0.25<X?0.55), and the second relative permittivity is smaller than the first relative permittivity.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: May 9, 2017
    Assignee: TDK CORPORATION
    Inventors: Toshio Sakurai, Kiyoshi Hatanaka, Takashi Fukui, Shigemitsu Tomaki
  • Patent number: 9634114
    Abstract: A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. Alternatively, the tunnel field-effect transistor is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting n-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. The nano wire is configured from a first region and a second region. For instance, the first region is intermittently doped with a p-type dopant, and the second region is doped with an n-type dopant.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: April 25, 2017
    Assignees: National University Corporation Hakkaido University, Japan Science and Technology Agency
    Inventors: Takashi Fukui, Katsuhiro Tomioka
  • Publication number: 20160284536
    Abstract: The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (?110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction.
    Type: Application
    Filed: October 29, 2014
    Publication date: September 29, 2016
    Applicants: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Takashi FUKUI, Katsuhiro TOMIOKA
  • Publication number: 20160235641
    Abstract: The present invention provides a skin cosmetic containing the following components (A), (B), (C), (D), (E), and (F): (A) 0.5 to 6 mass % of a linear saturated fatty acid having 12 to 22 of carbon atom, (B) 0.010 to 5 mass % of an organic base, (C) 0.010 to 1 mass % of an inorganic base, (D) 0.5 to 6 mass % of a linear saturated alcohol having 12 to 22 of carbon atom, (E) 0.05 to 9 mass % of a powder, and (F) water, wherein the component (D) comprises at least a linear saturated alcohol having 12 to 20 of carbon atom, and the mass ratio of the component (E) to the total amount of the components (A) and (D) [(A)+(D)] is (E)/[(A)+(D)]=from 0.01 to 5.
    Type: Application
    Filed: April 10, 2015
    Publication date: August 18, 2016
    Applicant: Kao Corporation
    Inventors: Chihiro Ueyama, Tomokazu Yoshida, Takashi Fukui, Masanori Orita
  • Publication number: 20160204224
    Abstract: A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. Alternatively, the tunnel field-effect transistor is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting n-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. The nano wire is configured from a first region and a second region. For instance, the first region is intermittently doped with a p-type dopant, and the second region is doped with an n-type dopant.
    Type: Application
    Filed: August 12, 2014
    Publication date: July 14, 2016
    Inventors: Takashi FUKUI, Katsuhiro TOMIOKA
  • Publication number: 20160013535
    Abstract: A transmission line is provided with a line portion with a first relative permittivity which is composed of a first dielectric and a conductor filler dispersed in the first dielectric, and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the surrounding dielectric portion exists around the line portion in a cross section perpendicular to a direction in which electromagnetic waves transmit in the line portion, the first relative permittivity is 600 or more, and the second relative permittivity is smaller than the first relative permittivity. An electronic component has the transmission line. Further, an electronic component is provided with a resonator having a resonant frequency ranging from 1 GHz to 10 GHz, wherein, the resonator is formed by using the transmission line.
    Type: Application
    Filed: July 1, 2015
    Publication date: January 14, 2016
    Inventors: Takashi FUKUI, Kiyoshi HATANAKA, Toshio SAKURAI, Shigemitsu TOMAKI