Patents by Inventor Takashi HAMOCHI
Takashi HAMOCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9991392Abstract: To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.Type: GrantFiled: November 21, 2014Date of Patent: June 5, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichi Koezuka, Yukinori Shima, Masami Jintyou, Takashi Hamochi, Satoshi Higano, Shunpei Yamazaki
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Publication number: 20180145138Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.Type: ApplicationFiled: January 18, 2018Publication date: May 24, 2018Inventors: Toshinari SASAKI, Takashi HAMOCHI, Toshiyuki MIYAMOTO, Masafumi NOMURA, Junichi KOEZUKA, Kenichi OKAZAKI
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Patent number: 9966475Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.Type: GrantFiled: June 22, 2017Date of Patent: May 8, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshiyuki Miyamoto, Masafumi Nomura, Takashi Hamochi, Kenichi Okazaki
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Patent number: 9954117Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations.Type: GrantFiled: July 27, 2017Date of Patent: April 24, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichi Koezuka, Masami Jintyou, Yukinori Shima, Takashi Hamochi, Yasutaka Nakazawa, Shunpei Yamazaki
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Publication number: 20180090621Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.Type: ApplicationFiled: November 27, 2017Publication date: March 29, 2018Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Masami JINTYOU, Yukinori SHIMA, Takashi HAMOCHI, Yasutaka NAKAZAWA
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Publication number: 20180047753Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.Type: ApplicationFiled: October 3, 2017Publication date: February 15, 2018Inventors: Shunpei YAMAZAKI, Tetsuhiro TANAKA, Yoshinori IEDA, Toshiyuki MIYAMOTO, Masafumi NOMURA, Takashi HAMOCHI, Kenichi OKAZAKI, Mitsuhiro ICHIJO, Toshiya ENDO
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Publication number: 20180040722Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.Type: ApplicationFiled: July 31, 2017Publication date: February 8, 2018Inventors: Toshimitsu OBONAI, Hironobu TAKAHASHI, Yasuharu HOSAKA, Masahiro WATANABE, Takuya HANDA, Yukinori SHIMA, Takashi HAMOCHI
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Publication number: 20180025918Abstract: A transistor with high productivity and a method for manufacturing the transistor are provided. In the formation of a bottom-gate transistor using a metal oxide layer as a semiconductor layer where a channel is formed, a gate insulating layer including silicon nitride is formed, and then plasma treatment is successively performed in the same treatment chamber under an atmosphere containing oxygen. After that, the metal oxide layer is formed.Type: ApplicationFiled: July 19, 2017Publication date: January 25, 2018Inventors: Shunpei YAMAZAKI, Takashi HAMOCHI, Yasuharu HOSAKA, Toshimitsu OBONAI
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Publication number: 20180025913Abstract: A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.Type: ApplicationFiled: July 19, 2017Publication date: January 25, 2018Inventors: Shunpei YAMAZAKI, Takashi HAMOCHI, Yasutaka NAKAZAWA, Masami JINTYOU, Yukinori SHIMA
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Publication number: 20180012912Abstract: A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).Type: ApplicationFiled: September 7, 2017Publication date: January 11, 2018Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Yukinori SHIMA, Masami JINTYOU, Takashi HAMOCHI, Satoshi HIGANO, Yasuharu HOSAKA, Toshimitsu OBONAI
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Patent number: 9831347Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.Type: GrantFiled: May 23, 2016Date of Patent: November 28, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichi Koezuka, Masami Jintyou, Yukinori Shima, Takashi Hamochi, Yasutaka Nakazawa
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Patent number: 9831325Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.Type: GrantFiled: July 7, 2016Date of Patent: November 28, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Miyamoto, Masafumi Nomura, Takashi Hamochi, Kenichi Okazaki
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Publication number: 20170338353Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations.Type: ApplicationFiled: July 27, 2017Publication date: November 23, 2017Inventors: Junichi KOEZUKA, Masami JINTYOU, Yukinori SHIMA, Takashi HAMOCHI, Yasutaka NAKAZAWA, Shunpei YAMAZAKI
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Patent number: 9793295Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.Type: GrantFiled: August 30, 2016Date of Patent: October 17, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Yoshinori Ieda, Toshiyuki Miyamoto, Masafumi Nomura, Takashi Hamochi, Kenichi Okazaki, Mitsuhiro Ichijo, Toshiya Endo
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Publication number: 20170288063Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.Type: ApplicationFiled: June 22, 2017Publication date: October 5, 2017Inventors: Shunpei YAMAZAKI, Toshiyuki MIYAMOTO, Masafumi NOMURA, Takashi HAMOCHI, Kenichi OKAZAKI
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Publication number: 20170243759Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.Type: ApplicationFiled: February 13, 2017Publication date: August 24, 2017Inventors: Masami JINTYOU, Junichi KOEZUKA, Takashi HAMOCHI, Yasuharu HOSAKA
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Publication number: 20170236723Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.Type: ApplicationFiled: May 2, 2017Publication date: August 17, 2017Inventors: Shunpei YAMAZAKI, Yasuharu HOSAKA, Toshimitsu OBONAI, Junichi KOEZUKA, Yukinori SHIMA, Masahiko HAYAKAWA, Takashi HAMOCHI, Suzunosuke HIRAISHI
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Patent number: 9722095Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations.Type: GrantFiled: February 16, 2017Date of Patent: August 1, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichi Koezuka, Masami Jintyou, Yukinori Shima, Takashi Hamochi, Yasutaka Nakazawa, Shunpei Yamazaki
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Patent number: 9711652Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.Type: GrantFiled: October 8, 2015Date of Patent: July 18, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshiyuki Miyamoto, Masafumi Nomura, Takashi Hamochi, Kenichi Okazaki
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Publication number: 20170186843Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.Type: ApplicationFiled: December 27, 2016Publication date: June 29, 2017Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuharu Hosaka, Toshimitsu OBONAI, Yukinori SHIMA, Masami JINTYOU, Daisuke KUROSAKI, Takashi HAMOCHI, Junichi KOEZUKA, Kenichi OKAZAKI, Shunpei YAMAZAKI