Patents by Inventor Takashi Hino

Takashi Hino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200208253
    Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.
    Type: Application
    Filed: February 28, 2020
    Publication date: July 2, 2020
    Applicants: SHIBAURA INSTITUTE OF TECHNOLOGY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Atsushi YUMOTO, Tomohiro SUGANO, Takashi HINO, Tetsuo INOUE, Shuichi SAITO
  • Publication number: 20200165715
    Abstract: A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0?Im/Ic?0.002.
    Type: Application
    Filed: January 30, 2020
    Publication date: May 28, 2020
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takashi HINO, Tetsuo INOUE, Shuichi SAITO
  • Publication number: 20200072785
    Abstract: A sensor element includes: an element base including: a ceramic body made of an oxygen-ion conductive solid electrolyte, and having a gas inlet at one end portion thereof; at least one internal chamber located inside the ceramic body, and communicating with the gas inlet under predetermined diffusion resistance; an electrochemical pump cell including an electrode located on an outer surface of the ceramic body, an electrode facing the chamber, and a solid electrolyte located therebetween; and a heater buried in the ceramic body, and an leading-end protective layer being porous, and covering a leading end surface and four side surfaces in a predetermined range of the element base on the one end portion. The leading-end protective layer has an extension extending into the gas inlet, and fixed to an inner wall surface of the ceramic body demarcating the gas inlet.
    Type: Application
    Filed: August 27, 2019
    Publication date: March 5, 2020
    Inventors: Yusuke WATANABE, Mika KAI, Tomoya SEIMORI, TAKASHI HINO
  • Publication number: 20190212247
    Abstract: A method of measuring adhesive strength between an element body and a porous protection layer that are included in a sensor element includes (a) a step of holding a portion of the element body where the porous protection layer is absent with an elastic force exerted by a holding jig, and placing a peeling jig at a position between the porous protection layer and the holding jig in the longitudinal direction such that the element body is allowed to move in the longitudinal direction while the porous protection layer is prevented from moving in the longitudinal direction toward the holding jig; and (b) a step of moving, after the step (a), the peeling jig pushes the porous protection layer in the longitudinal direction, and measuring the adhesive strength of the porous protection layer.
    Type: Application
    Filed: January 7, 2019
    Publication date: July 11, 2019
    Inventors: Ryo ONISHI, Yosuke ADACHI, Takashi HINO
  • Patent number: 10267762
    Abstract: A sensor element includes an element body having an elongate rectangular parallelepiped shape and including solid electrolyte layers with oxygen ion conductivity, an outer pump electrode disposed on a first surface of the element body, and a protective layer covering at least a part of a second surface of the element body on a side opposite to the first surface and including one or more spaces (a lower space) that are present apart from the second surface in a direction perpendicular to the second surface.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: April 23, 2019
    Assignee: NGK INSULATORS, LTD.
    Inventors: Takashi Hino, Mika Murakami, Koichi Masuda, Hironori Sakakibara
  • Publication number: 20190002281
    Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.
    Type: Application
    Filed: September 7, 2018
    Publication date: January 3, 2019
    Applicants: SHIBAURA INSTITUTE OF TECHNOLOGY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Atsushi YUMOTO, Mari SHIMIZU, Tetsuo INOUE, Takashi HINO, Shuichi SAITO
  • Patent number: 10100413
    Abstract: A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 ?m or less. A thickness of the aluminum nitride coating is no less than 10 ?m. A film density of the aluminum nitride coating is no less than 90% An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 ?m×20 ?m unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: October 16, 2018
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Michio Sato, Takashi Hino, Masashi Nakatani
  • Publication number: 20180284054
    Abstract: A sensor element includes an element base made of an oxygen-ion conductive solid electrolyte, an internal space provided inside the element base, an electrochemical pump cell that pumps oxygen in and out between the internal space and outside, and a porous thermal shock resistant layer provided to an outermost peripheral part in a predetermined range at one end part of the element base, at which a gas inlet is provided. A thermal diffusion time in a thickness direction of the thermal shock resistant layer is 0.4 sec to 1.0 sec inclusive. A thermal diffusion time at a leading end part of the thermal shock resistant layer covering the gas inlet at a farthest leading end position at the one end part is longest, and a thermal diffusion time at a pump surface is longer than a thermal diffusion time at a heater surface.
    Type: Application
    Filed: March 28, 2018
    Publication date: October 4, 2018
    Inventor: Takashi HINO
  • Publication number: 20180284055
    Abstract: A sensor element includes: an element base made of an oxygen-ion conductive solid electrolyte; an internal space provided inside the element base; an electrochemical pump cell configured to pump oxygen in and out between the internal space and outside; a porous thermal shock resistant layer provided to an outermost peripheral part in a predetermined range at one end part of the element base, at which a gas inlet is provided; and a buffer layer adjacent to the thermal shock resistant layer on a pump surface and a heater surface. A thermal diffusion time in a thickness direction of the thermal shock resistant layer is 0.4 sec to 1.0 sec inclusive, and a total thermal diffusion time in a stacking direction of the thermal shock resistant layer and the buffer layer is 0.2 sec to 1.0 sec inclusive.
    Type: Application
    Filed: March 28, 2018
    Publication date: October 4, 2018
    Inventor: Takashi HINO
  • Patent number: 9988702
    Abstract: The present invention provides a component for a plasma processing apparatus, the component comprising: a base material; an underlayer covering a surface of the base material; and an yttrium oxide film covering a surface of the underlayer, wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m·K or less, the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope, the yttrium oxide film has a film thickness of 10 ?m or more and a film density of 96% or more, and when a surface of the yttrium oxide film is observed under a microscope, an area coverage ratio of the particulate portions is 0 to 20% in an observation range of 20 ?m×20 ?m and an ar
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: June 5, 2018
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Michio Sato, Takashi Hino, Masashi Nakatani
  • Publication number: 20170022595
    Abstract: The present invention provides a plasma-resistant component for use in a plasma apparatus, wherein an oxide film is formed on at least part of a surface of a substrate of the component, the oxide film is a deposited oxide film formed as an aggregate of polycrystalline particles, the polycrystalline particles being formed by sinter-bonding of microparticles having an average particle size of 0.05 to 3 ?m, and the deposited oxide film has a film thickness of 10 ?m or more and 200 ?m or less and a film density of 90% or more. Due to above structure, it becomes possible to obtain a plasma-resistant component and a method of manufacturing a plasma-resistant component in which the generation of particles removed from the component is stably and effectively suppressed, and damage such as corrosion and deformation rarely occur during the regeneration process.
    Type: Application
    Filed: March 20, 2015
    Publication date: January 26, 2017
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Michio SATO, Takashi HINO, Masashi NAKATANI, Takashi NAKAMURA
  • Publication number: 20170002470
    Abstract: A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 ?m or less. A thickness of the aluminum nitride coating is no less than 10 ?m. A film density of the aluminum nitride coating is no less than 90%. An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 ?m×20 ?m unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.
    Type: Application
    Filed: November 26, 2014
    Publication date: January 5, 2017
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Michio SATO, Takashi HINO, Masashi NAKATANI
  • Publication number: 20160282299
    Abstract: A sensor element includes an element body having an elongate rectangular parallelepiped shape and including solid electrolyte layers with oxygen ion conductivity, an outer pump electrode disposed on a first surface of the element body, and a protective layer covering at least a part of a second surface of the element body on a side opposite to the first surface and including one or more exposed spaces (a lower space) to which the second surface is exposed.
    Type: Application
    Filed: March 18, 2016
    Publication date: September 29, 2016
    Inventors: Takashi HINO, Mika MURAKAMI, Koichi MASUDA, Hironori SAKAKIBARA
  • Publication number: 20160282298
    Abstract: A sensor element includes an element body having an elongate rectangular parallelepiped shape and including solid electrolyte layers with oxygen ion conductivity, an outer pump electrode disposed on a first surface of the element body, and a protective layer covering at least a part of the first surface of the element body and including one or more exposed spaces (an upper space) to which the first surface is exposed.
    Type: Application
    Filed: March 18, 2016
    Publication date: September 29, 2016
    Inventors: Takashi HINO, Mika MURAKAMI, Koichi MASUDA, Hironori SAKAKIBARA
  • Publication number: 20160282301
    Abstract: A sensor element includes an element body having an elongate rectangular parallelepiped shape and including solid electrolyte layers with oxygen ion conductivity, an outer pump electrode disposed on a first surface of the element body, and a protective layer covering at least a part of a second surface of the element body on a side opposite to the first surface and including one or more spaces (a lower space) that are present apart from the second surface in a direction perpendicular to the second surface.
    Type: Application
    Filed: March 18, 2016
    Publication date: September 29, 2016
    Inventors: Takashi HINO, Mika MURAKAMI, Koichi MASUDA, Hironori SAKAKIBARA
  • Publication number: 20160282300
    Abstract: A sensor element includes an element body having an elongate rectangular parallelepiped shape and including solid electrolyte layers with oxygen ion conductivity, an outer pump electrode disposed on a first surface of the element body, and a protective layer covering at least a part of the first surface of the element body and including one or more spaces (an upper space) that are present apart from the first surface in a direction perpendicular to the first surface.
    Type: Application
    Filed: March 18, 2016
    Publication date: September 29, 2016
    Inventors: Takashi HINO, Mika MURAKAMI, Koichi MASUDA, Hironori SAKAKIBARA
  • Patent number: 9355855
    Abstract: The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coating 20 contains at least one of particulate portions and non-particulate portions. The yttrium oxide coating 20 has a film thickness of 10 ?m or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: May 31, 2016
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Michio Sato, Takashi Hino, Takashi Rokutanda, Masashi Nakatani
  • Publication number: 20150152540
    Abstract: The present invention provides a component for a plasma processing apparatus, the component comprising: a base material; an underlayer covering a surface of the base material; and an yttrium oxide film covering a surface of the underlayer, wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m·K or less, the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope, the yttrium oxide film has a film thickness of 10 ?m or more and a film density of 96% or more, and when a surface of the yttrium oxide film is observed under a microscope, an area coverage ratio of the particulate portions is 0 to 20% in an observation range of 20 ?m×20 ?m and an ar
    Type: Application
    Filed: May 22, 2013
    Publication date: June 4, 2015
    Inventors: Michio Sato, Takashi Hino, Masashi Nakatani
  • Publication number: 20130251949
    Abstract: The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coating 20 contains at least one of particulate portions and non-particulate portions. The yttrium oxide coating 20 has a film thickness of 10 ?m or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.
    Type: Application
    Filed: November 29, 2011
    Publication date: September 26, 2013
    Applicants: TOSHIBA MATERIALS CO., LTD., KABUSHIKI KAISHA TOSHIBA
    Inventors: Michio Sato, Takashi Hino, Takashi Rokutanda, Masashi Nakatani
  • Patent number: 8483425
    Abstract: To be precisely extracted a house footprint. There is provided a geospatial information creating system for extracting a footprint of a house from an aerial photograph, comprising a processor for executing a program, a memory for storing data required for executing the program, and a storage unit for storing the aerial photograph. The processor detects edges of an image based on a characteristic quantity of neighboring pixels in the aerial photograph stored in the storage unit; extracts an orientation of the house by analyzing directions of the detected edges; and generates a polygon of an outline of the house by using linear lines of the extracted orientation of the house.
    Type: Grant
    Filed: August 5, 2010
    Date of Patent: July 9, 2013
    Assignee: Hitachi Solutions, Ltd.
    Inventors: Tao Guo, Yoriko Kazama, Takashi Hino, Yoshiaki Kagawa