Patents by Inventor Takashi Hirao

Takashi Hirao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200258853
    Abstract: A power conversion device includes first and second power semiconductor elements, and a circuit for transferring a drive signal of the first and second power semiconductor elements. The circuit board includes a first emitter wire which is formed along an arranging direction of the first power semiconductor element and the second power semiconductor element, a first gate wire which is disposed between the first power semiconductor element and the first emitter wire, a second gate wire which is disposed between the second power semiconductor element and the emitter wire, a third gate wire which is disposed to face the first gate wire and the second gate wire with the emitter wire interposed between the third gate wire and the first gate wire and the second gate wire, and a first gate resistor which connects the first gate wire and the third gate wire over the first emitter wire.
    Type: Application
    Filed: July 27, 2018
    Publication date: August 13, 2020
    Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Akihiro NAMBA, Takashi HIRAO, Masami OONISHI
  • Publication number: 20200232120
    Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to <0001> direction of the crystal of the nitride of the group 13 element.
    Type: Application
    Filed: February 21, 2020
    Publication date: July 23, 2020
    Inventors: Takayuki HIRAO, Hirokazu NAKANISHI, Mikiya ICHIMURA, Takanao SHIMODAIRA, Masahiro SAKAI, Takashi YOSHINO
  • Publication number: 20200227333
    Abstract: An object of the present invention is to provide a power semiconductor device enabling maintenance in reliability and improvement in productivity. According to the present invention, provided are: a circuit body including a semiconductor element and a conductive portion; a first insulation and a second insulation opposed to each other, the circuit body being interposed between the first insulation and the second insulation; a first base and a second base opposed to each other, the circuit body, the first insulation, and the second insulation being interposed between the first base and the second base; a case having a first opening portion covered with the first base and a second opening portion covered with the second base; and a distance regulation portion provided in space between the first base and the second base, the distance regulation portion regulating a distance between the first base and the second base in contact with the first base and the second base.
    Type: Application
    Filed: May 22, 2018
    Publication date: July 16, 2020
    Inventors: Nobutake TSUYUNO, Hiromi SHIMAZU, Akihiro NAMBA, Akira MATSUSHITA, Hiroshi HOUZOUJI, Atsuo NISHIHARA, Toshiaki ISHII, Takashi HIRAO
  • Publication number: 20200203573
    Abstract: It is provided a layer of a crystal of a nitride of a group 13 element selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof, and the layer includes an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, and the high-luminance light-emitting part has a portion extending along an m-plane of the crystal of the nitride of the group 13 element, in the case that the upper surface is observed by cathode luminescence. The upper surface has an arithmetic average roughness Ra of 0.05 nm or more and 1.0 nm or less.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 25, 2020
    Inventors: Takayuki HIRAO, Hirokazu NAKANISHI, Mikiya ICHIMURA, Takanao SHIMODAIRA, Masahiro SAKAI, Takashi YOSHINO
  • Publication number: 20200194626
    Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 18, 2020
    Inventors: Takayuki HIRAO, Hirokazu NAKANISHI, Mikiya ICHIMURA, Takanao SHIMODAIRA, Masahiro SAKAI, Takashi YOSHINO
  • Publication number: 20200194621
    Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. The crystal of the nitride of the group 13 element contains oxygen atoms in a content of 1×1018 atom/cm3 or less, silicon atoms, manganese atoms, carbon atoms, magnesium atoms and calcium atoms in contents of 1×1017 atom/cm3 or less, chromium atoms in a content of 1×1016 atom/cm3 or less and chlorine atoms in a content of 1×1015 atom/cm3 or less.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 18, 2020
    Inventors: Takayuki HIRAO, Hirokazu NAKANISHI, Mikiya ICHIMURA, Takanao SHIMODAIRA, Masahiro SAKAI, Takashi YOSHINO
  • Publication number: 20200190695
    Abstract: It is provided a layer of a crystal of a group 13 nitride having an upper surface and lower surface and composed of a crystal of the group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof. In the case that the upper surface of the layer of the crystal of the group 13 nitride is observed by cathode luminescence, the upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. A half value width of reflection at (0002) plane of an X-ray rocking curve on the upper surface is 3000 seconds or less and 20 seconds or more.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 18, 2020
    Inventors: Takayuki HIRAO, Hirokazu NAKANISHI, Mikiya ICHIMURA, Takanao SHIMODAIRA, Masahiro SAKAI, Takashi YOSHINO
  • Publication number: 20200135396
    Abstract: A ceramic electronic component includes a stack including ceramic layers and internal electrodes stacked alternately, and external electrodes provided on a surface of the stack and electrically connected to the internal electrodes. The internal electrodes include a melting trigger portion that melts earlier than any other portion. The ceramic layer adjacent to the internal electrode including the melting trigger portion includes a cavity. The cavity is provided at a position at which the cavity overlaps the melting trigger portion at least partially in a stacking direction of the internal electrodes. The cavity is open on a melting trigger portion side. A surface of at least one of the stack and the external electrodes is provided with an identifier that serves as a marker indicating use of the ceramic electronic component with the cavity vertically below the melting trigger portion.
    Type: Application
    Filed: October 29, 2019
    Publication date: April 30, 2020
    Inventors: Takahiro HIRAO, Takashi OHARA, Shu HAMADA
  • Publication number: 20200057644
    Abstract: An arithmetic processing apparatus includes weight tables each configured to store weighting factors in one-to-one correspondence with indexes associated with instruction addresses, a first weight arithmetic unit configured to perform a first operation and a second operation based on the weighting factors retrieved from the weight tables in response to an instruction fetch address, the first operation producing a first value for branch prediction for the instruction fetch address, the second operation producing second values for future branch prediction, and a second weight arithmetic unit configured to perform, in parallel with the second operation, a third operation equivalent to the second operation based on the weighting factors retrieved from the weight tables in response to an address of a completed branch instruction, wherein the second values stored in the first weight arithmetic unit are replaced with the third values upon detection of a wrong branch prediction.
    Type: Application
    Filed: August 9, 2019
    Publication date: February 20, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Takashi Suzuki, Seiji HIRAO
  • Patent number: 10539576
    Abstract: An object of the present invention is to develop and provide a lung cancer differential marker with which lung cancer can be diagnosed conveniently and highly sensitively without depending only on increase or decrease in protein expression level between cancer patients and healthy persons. Another object of the present invention is to develop and provide a glycan marker capable of distinguishing histological types of lung cancer. Of serum glycoproteins, glycopeptide and glycoprotein groups whose glycan structures were altered specifically in lung cancer cell culture supernatants were identified, and they are provided as lung cancer differential markers.
    Type: Grant
    Filed: June 12, 2017
    Date of Patent: January 21, 2020
    Assignees: National Institute of Advanced Industrial Science and Technology, Tokyo Medical University
    Inventors: Hisashi Narimatsu, Akira Togayachi, Yuzuru Ikehara, Hiroyuki Kaji, Atsushi Kuno, Takashi Ohkura, Hideki Matsuzaki, Yoshitoshi Hirao, Jun Iwaki, Minako Abe, Masaharu Nomura, Masayuki Noguchi
  • Patent number: 10418180
    Abstract: In an electronic component, a first outer electrode includes a first conductive layer provided on a first end surface. A second outer electrode includes a second conductive layer provided on a second end surface. A first inner electrode passes through the first conductive layer. A second inner electrode passes through the second conductive layer.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: September 17, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Tomohiro Kageyama, Tetsuo Kawakami, Manabu Sakai, Takashi Ohara, Takahiro Hirao, Ryuki Kakuta
  • Publication number: 20190271724
    Abstract: In an object of the present invention, an object is to provide a technique for achieving higher accuracy in current detection of a radio frequency current, in a current detection device. The current detection device of the present invention includes two or more conductors through which a current shunted from a same conductor flows; conductors through which the shunted current flows have portions opposed to each other; currents flow in opposite directions in opposing portions of the conductors; and a magnetic field detecting element is provided between the opposing portions of the conductors.
    Type: Application
    Filed: December 4, 2017
    Publication date: September 5, 2019
    Applicant: Hitachi Automotive Systems, Ltd.
    Inventors: Takashi HIRAO, Akihiro NAMBA
  • Publication number: 20190229032
    Abstract: To improve yield and reliability at the time when a plurality of semiconductor elements used for a semiconductor device is arranged in parallel.
    Type: Application
    Filed: July 19, 2017
    Publication date: July 25, 2019
    Inventors: Masami OONISHI, Takashi HIRAO
  • Publication number: 20190175874
    Abstract: A medical elongated body is disclosed that suppresses elongation in an axial direction while maintaining high flexibility and has high torque transmission capability even in a bent state. The medical elongated body includes a tube shaped body. The tube shaped body has a slit extending in a spiral shape while meandering, the slit is formed from a pair of a first opposing surface and a second opposing surface, the first opposing surface forms a first convex portion, the first convex portion has a first wide portion having a width wider in a circumferential direction Y, the second opposing surface forms a first concave portion which surrounds and accommodates the first wide portion, the first convex portion has a first plane portion and a first side portion connected to both end portions, and in a circumferential developed view, the first side portion and the first plane portion have tangential discontinuity.
    Type: Application
    Filed: February 15, 2019
    Publication date: June 13, 2019
    Applicant: TERUMO KABUSHIKI KAISHA
    Inventors: Yuichi TADA, Takashi KITAOKA, Mizuho HIRAO
  • Publication number: 20190146018
    Abstract: The present invention aims to reduce the leakage current that flows when measuring a high voltage and includes: a voltage detector that detects a voltage and outputs a detection voltage; a current supplier that supplies a measurement current across a pair of input terminals via a protective resistor; and a processor that executes a voltage measurement process, which measures the voltage based on data indicating the detection voltage, and a resistance measurement process, which measures a resistance connected between the input terminals based on the voltage and the current. A first switch is connected in parallel to the protective resistor and the processor executes the voltage measurement process in a state where the first switch has been set open to measure the terminal voltage, and executes the resistance measurement process by setting the first switch shorted when the voltage is equal to or below the reference voltage value.
    Type: Application
    Filed: January 11, 2019
    Publication date: May 16, 2019
    Applicant: HIOKI DENKI KABUSHIKI KAISHA
    Inventors: Tetsuya NAKAMURA, Takashi HIRAO, Yuta AKAMATSU, Yuta SUZUKI
  • Patent number: 10109549
    Abstract: In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: October 23, 2018
    Assignee: Hitachi, Ltd.
    Inventors: Takashi Hirao, Kan Yasui, Kazuhiro Suzuki
  • Publication number: 20180267715
    Abstract: According to one embodiment, the memory system includes a nonvolatile memory including a plurality of blocks, and a controller circuit that controls execution of a data writing process and a garbage collection process. Each of the blocks is an unit of erasure. The data writing process includes a process of writing user data into the nonvolatile memory in accordance with a request from an external member. The garbage collection process includes a process of moving valid data in at least a first block into a second block among the blocks and invalidating the valid data in the first block to be erasable. Upon receiving a data write request from the external member, the controller circuit controls a length of a waiting time to be provided before or after the data writing process within a period from receiving the write request to returning a response to the external member.
    Type: Application
    Filed: March 8, 2018
    Publication date: September 20, 2018
    Applicant: Toshiba Memory Corporation
    Inventors: Hiroki Matsudaira, Norio Aoyama, Ryoichi Kato, Taku Ooneda, Takashi Hirao, Aurelien Nam Phong Tran, Hiroyuki Yamaguchi, Takuya Suzuki, Hajime Yamazaki
  • Publication number: 20170352604
    Abstract: In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.
    Type: Application
    Filed: December 24, 2014
    Publication date: December 7, 2017
    Applicant: Hitachi, Ltd.
    Inventors: Takashi HIRAO, Kan YASUI, Kazuhiro SUZUKI
  • Patent number: 9711590
    Abstract: There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: July 18, 2017
    Assignee: FLOSFIA, INC.
    Inventors: Kentaro Kaneko, Toshimi Hitora, Takashi Hirao
  • Patent number: 9654027
    Abstract: A semiconductor device is provided that can prevent a current from being concentrated into a specific chip, and can reduce loss as well as noise. The semiconductor device according to the present invention includes: a switching element; a main diode that is connected in parallel to the switching element; and an auxiliary diode that is connected in parallel to the switching element and has a different structure from that of the main diode, wherein in a conductive state a current flowing through the auxiliary diode is smaller than that through the main diode, and in a transition period from the conductive state to a non-conductive state a current flowing through the auxiliary diode is larger than that through the main diode.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: May 16, 2017
    Assignee: Hitachi, Ltd.
    Inventors: Takashi Hirao, Mutsuhiro Mori