Patents by Inventor Takashi Hirao

Takashi Hirao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080280304
    Abstract: A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3? end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3? end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus The method for detecting species in a target plant genus, particularly an allergenic plant genus such as the genus Fagopyrum, can make it possible to detect with hig
    Type: Application
    Filed: June 16, 2008
    Publication date: November 13, 2008
    Applicant: HOUSE FOODS CORPORATION
    Inventors: Takashi Hirao, Masayuki Hiramoto
  • Publication number: 20080217684
    Abstract: A semiconductor device comprises a trench-gate type field-effect transistor on a semiconductor substrate having a first main surface and a second main surface oppositely positioned in a thickness direction, wherein the trench-gate type field-effect transistor comprises a first semiconductor region at the first main surface side; a second semiconductor region at the second main surface; a semiconductor well region between the first semiconductor region and the second semiconductor region; a trench formed so as to protrude in a first direction intersecting the second main surface; a gate electrode formed on an inner surface of the trench via a gate insulating film, and a bottom of the gate electrode is in the first semiconductor region, and a well bottom has a well deep portion and a well shallow portion, and the well deep portion is in a region more distant from the gate insulating film compared to the well shallow portion.
    Type: Application
    Filed: January 25, 2008
    Publication date: September 11, 2008
    Applicant: Renesas Technology Corp.
    Inventors: Takayuki Hashimoto, Takashi Hirao, Masaki Shiraishi
  • Patent number: 7402391
    Abstract: A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3? end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3? end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: July 22, 2008
    Assignee: House Foods Corporation
    Inventors: Takashi Hirao, Masayuki Hiramoto
  • Publication number: 20080064028
    Abstract: Provided is a method of quantifying a specific plant genus in a food or a food ingredient by a PCR method, comprising: (i) preparing a sample for correction where a sample derived from the specific plant genus to be detected and a standard plant sample are mixed in a predetermined ratio, and extracting genomic DNA from the sample for correction; (ii) preparing a test sample where a known amount of the standard plant sample is added to the food or the food ingredient to be examined, and extracting genomic DNA from the test sample; (iii) practicing a quantitative PCR method using the genomic DNAs and primers; and (iv) conducting correction with a standard value for correction determined for the sample for correction to calculate the amount of the specific plant ingredient contained in the test sample.
    Type: Application
    Filed: May 14, 2004
    Publication date: March 13, 2008
    Inventors: Takashi Hirao, Masayuki Hiramoto, Satoshi Watanabe, Jinji Shono
  • Publication number: 20070278490
    Abstract: A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The (002) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred orientation along a direction perpendicular to a substrate of the semiconductor device and a lattice spacing d002 of at least 2.619 ?.
    Type: Application
    Filed: June 1, 2007
    Publication date: December 6, 2007
    Applicants: Kochi Industrial Promotion Center, Casio Computer Co., Ltd.
    Inventors: Takashi Hirao, Takahiro Hiramatsu, Mamoru Furuta, Hiroshi Furuta, Tokiyoshi Matsuda
  • Publication number: 20070187678
    Abstract: A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.
    Type: Application
    Filed: February 9, 2007
    Publication date: August 16, 2007
    Applicants: Kochi Industrial Promotion Center, Casio Computer Co., Ltd.
    Inventors: Takashi Hirao, Mamoru Furuta, Hiroshi Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu
  • Publication number: 20070187760
    Abstract: A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.
    Type: Application
    Filed: February 1, 2007
    Publication date: August 16, 2007
    Applicants: Kochi Industrial Promotion Center, Casio Computer Co., Ltd.
    Inventors: Mamoru Furuta, Takashi Hirao, Hiroshi Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiromitsu Ishii, Hitoshi Hokari, Motohiko Yoshida
  • Publication number: 20070048779
    Abstract: A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3? end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3? end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus.
    Type: Application
    Filed: October 17, 2006
    Publication date: March 1, 2007
    Inventors: Takashi Hirao, Masayuki Hiramoto
  • Patent number: 7144702
    Abstract: A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3? end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3? end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: December 5, 2006
    Assignee: House Foods Corporation
    Inventors: Takashi Hirao, Masayuki Hiramoto
  • Publication number: 20030207298
    Abstract: A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in. the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3′ end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3′ end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus.
    Type: Application
    Filed: October 31, 2002
    Publication date: November 6, 2003
    Applicant: House Foods Corporation
    Inventors: Takashi Hirao, Masayuki Hiramoto
  • Patent number: 6207282
    Abstract: Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
    Type: Grant
    Filed: December 22, 1997
    Date of Patent: March 27, 2001
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masahiro Deguchi, Akihisa Yoshida, Makoto Kitabatake, Takashi Hirao
  • Patent number: 6127211
    Abstract: In a method of manufacturing a semiconductor device having an LDD structure, source gases for generating plural types of impurity ions exhibiting different molecular weights and different projected ranges in a target during impurity implantation are supplied to a plasma space, ionized, accelerated with a voltage, and implanted in a semiconductor region on the target substrate. In the case of manufacturing a top-gate transistor, a gate electrode on the semiconductor region has a sufficient thickness to serve as a mask. In the case of manufacturing a bottom-gate transistor, a mask and a resistor are used. An implantation angle is set to an optimum value as desired. Thereafter, the impurity is activated as desired. Thus, the semiconductor device having the LDD structure is manufactured by a single step of impurity implantation.
    Type: Grant
    Filed: September 29, 1998
    Date of Patent: October 3, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takashi Hirao, Akihisa Yoshida, Toru Fukumoto, Kazuyasu Adachi
  • Patent number: 6123774
    Abstract: A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.
    Type: Grant
    Filed: June 2, 1997
    Date of Patent: September 26, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takashi Hirao, Akihisa Yoshida, Masatoshi Kitagawa
  • Patent number: 6105225
    Abstract: A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.
    Type: Grant
    Filed: February 9, 1996
    Date of Patent: August 22, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hideo Torii, Takeshi Kamada, Shigenori Hayashi, Ryoichi Takayama, Takashi Hirao, Masumi Hattori
  • Patent number: 6083354
    Abstract: The object of the present invention is to provide a treatment method to remove lattice defects and non-diamond elements that exist in a diamond or a diamond thin film.The treatment method whereby the aforementioned object is achieved is to have the diamond or the diamond thin film irradiated by ultra-violet light or heated in an oxygen ambient.According to said treatment method, it has become possible to obtain a diamond or a diamond thin film that is free from the adverse effects of lattice defects and non-diamond elements.
    Type: Grant
    Filed: August 21, 1995
    Date of Patent: July 4, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masahiro Deguchi, Makoto Kitabatake, Takashi Hirao
  • Patent number: 5976919
    Abstract: A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.
    Type: Grant
    Filed: August 1, 1997
    Date of Patent: November 2, 1999
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takashi Hirao, Akihisa Yoshida, Masatoshi Kitagawa
  • Patent number: 5814194
    Abstract: Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
    Type: Grant
    Filed: October 12, 1995
    Date of Patent: September 29, 1998
    Assignees: Matsushita Electric Industrial Co., Ltd, Research Development Corporation of Japan
    Inventors: Masahiro Deguchi, Akihisa Yoshida, Makoto Kitabatake, Takashi Hirao
  • Patent number: 5766342
    Abstract: The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.
    Type: Grant
    Filed: October 17, 1995
    Date of Patent: June 16, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Munehiro Shibuya, Masatoshi Kitagawa, Yuji Mukai, Takashi Hirao, Akihisa Yoshida
  • Patent number: 5719740
    Abstract: A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
    Type: Grant
    Filed: February 1, 1996
    Date of Patent: February 17, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigenori Hayashi, Takeshi Kamada, Hideo Torii, Takashi Hirao
  • Patent number: 5684574
    Abstract: A beam emitted from a light source including the characteristic wavelength of flown particles in a film forming system is interrupted by a beam chopper in a predetermined cycle, and is then divided into a probing beam and a reference beam by a beam divider. The probing beam passes through a particle flight area and is then injected into a photo detector through an optical filter, and a probing signal is outputted. A reference signal is obtained from the reference beam in the same manner. A data processor detects the phase and level of both signals, so that an absorbance, i.e., a film forming rate for the flown particles is estimated. The film forming rate is integrated with time so that a film thickness is estimated. Thus, the range of the applicable film forming rate is wide.
    Type: Grant
    Filed: October 31, 1995
    Date of Patent: November 4, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akira Shiokawa, Hideaki Yasui, Koichi Kotera, Yuuji Mukai, Hiroyoshi Tanaka, Takashi Hirao