Patents by Inventor Takashi Hirao

Takashi Hirao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5674366
    Abstract: A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: October 7, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigenori Hayashi, Kazuki Komaki, Takeshi Kamada, Masatoshi Kitagawa, Takashi Deguchi, Ryoichi Takayama, Takashi Hirao
  • Patent number: 5672252
    Abstract: A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.
    Type: Grant
    Filed: June 15, 1995
    Date of Patent: September 30, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigenori Hayashi, Kazuki Komaki, Takeshi Kamada, Masatoshi Kitagawa, Takashi Deguchi, Ryoichi Takayama, Takashi Hirao
  • Patent number: 5662965
    Abstract: Crystalline carbon-based thin film structures are formed in which a compositionally-graded intermediate layer is first deposited on a substrate, and a crystalline carbon-based thin film such as silicon carbide or diamond is deposited thereafter on the intermediate layer. The compositionally-graded intermediate layer has a carbon content which increases in a direction away from the substrate. The compositionally-graded intermediate layer is effective in reducing problems associated with the lattice mismatch between the thin film and the substrate which hamper conventional hetero-epitaxial growth of high quality crystalline carbon-based thin films.
    Type: Grant
    Filed: December 8, 1994
    Date of Patent: September 2, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masahiro Deguchi, Masatoshi Kitagawa, Takashi Hirao
  • Patent number: 5612536
    Abstract: A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to <100> direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon.
    Type: Grant
    Filed: January 19, 1995
    Date of Patent: March 18, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hideo Torii, Takeshi Kamada, Shigenori Hayashi, Ryoichi Takayama, Takashi Hirao, Masumi Hattori
  • Patent number: 5507080
    Abstract: A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
    Type: Grant
    Filed: December 5, 1994
    Date of Patent: April 16, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigenori Hayashi, Takeshi Kamada, Hideo Torii, Takashi Hirao
  • Patent number: 5470398
    Abstract: A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.
    Type: Grant
    Filed: September 23, 1991
    Date of Patent: November 28, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Munehiro Shibuya, Masatoshi Kitagawa, Takeshi Kamada, Takashi Hirao
  • Patent number: 5431733
    Abstract: A low vapor-pressure material feeding apparatus comprises a bubbler (4, 5), accommodating a low vapor-pressure material (6) therein, for bubbling the low vapor-pressure material (6) with an inert gas fed from an inert gas container (3). A bifurcated gas feeding passage (51, 8) is provided between the gas container (3) and a vacuum chamber (50). One branch passage directly introduces an inert gas into the vacuum chamber (50), and the other branch passage introduces an inert gas into the bubbler (4, 5). A gas mixture of a vaporized low vapor-pressure material (6) and the inert gas, is supplied from the bubbler (4, 5) to a vacuum chamber (50). A gas flow meter (7) detects a flow amount of the gas mixture. On a basis of a gas flow amount detected by the gas flow meter (7), an inert gas controller (10) adjusts a feeding amount of inert gas so that a total amount of an inert gas introduced directly into said vacuum chamber (50) and an inert gas introduced into the bubbler (4, 5) is kept at a constant value.
    Type: Grant
    Filed: June 29, 1993
    Date of Patent: July 11, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Munehiro Shibuya, Masatoshi Kitagawa, Takeshi Kamada, Takashi Hirao
  • Patent number: 5328855
    Abstract: Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals.
    Type: Grant
    Filed: July 24, 1992
    Date of Patent: July 12, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Makoto Kitabatake, Masahiro Deguchi, Takashi Hirao
  • Patent number: 5252174
    Abstract: A method for manufacturing substrates for depositing diamond thin films is disclosed.In the method, a hydrocarbon gas is discharge-decomposed, products generated by the discharge decomposition are accelerated to implant them in a surface layer of a substrate made of a material other than diamond and, thereby, the surface layer having bondings of carbon atoms and atoms compositing the substrate. Desirably, the substrate thus manufactured is subjected to a heat treatment at a temperature ranging from 800.degree. to 1,200.degree. C.
    Type: Grant
    Filed: May 28, 1992
    Date of Patent: October 12, 1993
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masahiro Deguchi, Takashi Hirao
  • Patent number: 5203925
    Abstract: An apparatus for producing a thin film of tantalum oxide comprising a vacuum chamber with a heater, an ampule of an organic tantalum compound, a container of a carrier gas, a container of an oxygen-containing gas, and a three way valve having a liquid inlet, a gas inlet and an outlet, the liquid inlet being connected with the ampule via a liquid flow controller, the gas inlet being connected with the containers of gas, the outlet being connected with the vacuum chamber, whereby the tantalum compound vaporized at the three way valve can obtain constant supply by the flow controller regardless of the ambient temperature, resulting in the tantalum oxide film of uniform quality.
    Type: Grant
    Filed: June 19, 1992
    Date of Patent: April 20, 1993
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Munehiro Shibuya, Masatoshi Kitagawa, Takeshi Kamada, Takashi Hirao, Hiroshi Nishizato
  • Patent number: 5141885
    Abstract: A method of fabricating a thin film transistor on an insulating substrate such as quartz or glass without defect in the channel region in semiconductor thin layer, or at the boundary between the semiconductor thin layer and gate insulation layer, but with high mobility and high integration. For that purpose, ions produced by the discharge-decomposition of a hydride gas including dopant are accelerated and implanted into the semiconductor thin layer, wherein the protecting insulation layer for protection of the channel region is of a thickness larger than the projected range of the hydrogen ion.
    Type: Grant
    Filed: June 3, 1991
    Date of Patent: August 25, 1992
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihisa Yoshida, Masatoshi Kitagawa, Takashi Hirao
  • Patent number: 5070027
    Abstract: A heterostructure diode is produced by a plasma CVD process. A defect caused on a silicon single crystal substrate by plasma deposition during formation of an amorphous semiconductor film leads to a problem of increase in the dark current due to the defect level. This defect is compensated for by active hydrogen contained in the amorphous semiconductor film so as to reduce the dark current. This can be effected by an annealing process conducted after formation of the heterojunction diode. The RF power is set low in the beginning period of formation of the semiconductor film. A radiation detecting apparatus is provided in which a plurality of the heterostructure diodes are integrated on a common substrate.
    Type: Grant
    Filed: February 23, 1990
    Date of Patent: December 3, 1991
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yoshio Mito, Masatoshi Kitagawa, Takashi Hirao, Yoshitake Yasuno, Ryuma Hirano
  • Patent number: 4980339
    Abstract: A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.
    Type: Grant
    Filed: July 25, 1988
    Date of Patent: December 25, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kentaro Setsune, Takeshi Kamada, Hideaki Adachi, Kiyotaka Wasa, Takashi Hirao, Osamu Yamazaki, Hidetaka Higashino
  • Patent number: 4861729
    Abstract: A method in which in order to dope impurities, with excellent controllability, into a sidewall of a trench formed in a semiconductor substrate, plasma is generated in a gas including the impurities and the semiconductor substrate is disposed in or near the plasma, so that the impurities may be doped into the sidewall of the trench uniformly and at high precision of concentration control; wherein one of a duluted B.sub.2 H.sub.6 gas and diluted AsH.sub.3 gas is chosen as the gas of the plasma, whereby one of B and As as the impurities directly enters the sidewall of the trench without first passing through a film.
    Type: Grant
    Filed: August 24, 1987
    Date of Patent: August 29, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Genshu Fuse, Takashi Hirao, Takashi Ohzone
  • Patent number: 4859908
    Abstract: A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.
    Type: Grant
    Filed: September 23, 1987
    Date of Patent: August 22, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihisa Yoshida, Kentaro Setsune, Takashi Hirao
  • Patent number: 4800174
    Abstract: A method of producing an amorphous silicon semiconductor device makes use of a capacitance-coupled high-frequency glow-discharge semiconductor production apparatus which is equipped with a plurality of glow-discharge chambers each having a high-frequency electrode and a substrate holder opposing each other and means for supplying material gases to the glow-discharge chambers. A reaction of a material gas is effected in a first glow-discharge chamber, so as to form a semiconductor layer having a first conductivity type on a substrate introduced into the first glow-discharge chamber, and, after moving the substrate into a second glow-discharge chamber, a reaction of a material gas different from the material gas used in the first glow-discharge chamber is effected, thereby forming a semiconductor layer having a second conductivity type on the semiconductor layer of the first conductivity type.
    Type: Grant
    Filed: May 18, 1987
    Date of Patent: January 24, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shinichiro Ishihara, Masatoshi Kitagawa, Takashi Hirao
  • Patent number: 4770923
    Abstract: An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.
    Type: Grant
    Filed: November 20, 1985
    Date of Patent: September 13, 1988
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiyotaka Wasa, Takashi Hirao, Atsuo Nishikawa, Seiji Nishino, Takeo Ohta
  • Patent number: 4624045
    Abstract: A thin film device such as an amorphous thin film solar battery is easily made with high integration by use of metal-diffused regions in the thin film as an electrical connection region across the thickness of the thin film. By use of such metal-diffused regions 24, 24 . . . for connection between transparent stripe shaped electrodes 21', 21'. . . disposed between glass substrate 20 and amorphous silicon thin film 23 and stripe shaped metal electrodes 25, 25 . . . on the top surface of the thin film 23, series connected solar battery cells can be made with a small number of process steps.
    Type: Grant
    Filed: March 27, 1985
    Date of Patent: November 25, 1986
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shinichiro Ishihara, Takashi Hirao, Koshiro Mori, Masaharu Ono, Masatoshi Kitagawa
  • Patent number: 4492605
    Abstract: A method for making photovoltaic device comprising the steps of moving at least one substrate into a reaction chamber, causing a plasma reaction of raw material gases in said reaction chamber, thereby forming an amorphous silicon layer of a first conductivity type on said substrate, moving said at least one substrate into a next reaction chamber for a next plasma reaction, causing said next plasma reaction of next raw material gases in said reaction chamber, thereby forming a second amorphous silicon layer of a second conductivity type on said layer of the first conductivity type, the improvement being in after finishing said forming of said an amorphous silicon layer of a first conductivity type, changing the gas atmosphere of said reaction chamber into a different atmosphere which is substantially identical and of equal pressure to the next gas atmosphere of said next reaction chamber, and thereafter moving said substrate to said next reaction chamber.
    Type: Grant
    Filed: March 18, 1983
    Date of Patent: January 8, 1985
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shin-ichiro Ishihara, Takashi Hirao, Koshiro Mori, Motonori Mochizuki
  • Patent number: 4185291
    Abstract: A junction-type FET comprising a semiconductor substrate 21 of a first conductivity type, and island region 22 of a second conductivity type which comprises a channel region and is selectively formed in the semiconductor substrate 21, and a buried isolating region 27 which is selected from the group consisting of an intrinsic layer, a low impurity concentration layer of the second conductivity type and a layer of first conductivity type, the buried isolating layer being formed by ion implantation of impurities of the first conductivity type in the island region 22 while keeping the impurity concentration at the surface thereof relatively high, and the buried isolating layer substantially isolating the channel region from the surface.
    Type: Grant
    Filed: June 16, 1978
    Date of Patent: January 22, 1980
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takashi Hirao, Shigetoshi Takayanagi, Takeshi Onuma, Toshio Sugawa, Kaoru Inoue